Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview Features Marking Symbol: PK
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2002/95/EC)
MTM86627
MTM86627
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview Features Marking Symbol: QK
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2002/95/EC)
MTM86627A
MTM86627A
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Untitled
Abstract: No abstract text available
Text: MTM861280LBF MTM861280LBF Silicon P-channel MOS FET Unit: mm For switching Features y Low drain-source ON-state Resistance:RDS on typ. = 300 mΩ（VGS = -4.0 V) y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: ML
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MTM861280LBF
UL-94
MTM861280LBF
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mtm861270
Abstract: MTM86127 mtm13127
Text: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features Marking Symbol : MK 1.4 1.6 Low Drain-source On-state Resistance : RDS on typ = 80 m (VGS = -4 V)
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TT4-EA-10304
MTM861270LBF
MTM13127
UL-94
mtm861270
MTM86127
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f101g
Abstract: 362 marking code sot 23-6 sot89 Marking code 2106 MARKING CODE 51 5 fet sot-89 GaAS fet sot89 C5 MARKING CODE SOT-89 SOT89 FET marking 139Q High Dynamic Range FET sot-89
Text: FP101 The Communications Edge TM Product Information High Dynamic Range FET Product Features x 50 – 3000 MHz x 13.5 dB Gain x +26 dBm P1dB x +37 dBm OIP3 x 2.0 dB Noise Figure x MTTF > 100 years x Lead-free/Green/RoHScompliant SOT-89 Package Product Description
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FP101
OT-89
FP101
1-800-WJ1-4401
f101g
362 marking code sot 23-6
sot89 Marking code 2106
MARKING CODE 51 5 fet sot-89
GaAS fet sot89
C5 MARKING CODE SOT-89
SOT89 FET marking
139Q
High Dynamic Range FET sot-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
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MTM76720
MTM76720
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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2002/95/EC)
MTM86727
MTM86727
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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2002/95/EC)
MTM86727
MTM86727
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 8 7 6 5 1 2 3 4 0.16 2.4 2.8 • Features Low drain-source On-state Resistance
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TT4-EA-12100
UL-94
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MTM76720
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package
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MTM76720
MTM76720
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marking JE FET
Abstract: MTM86727
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package
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2002/95/EC)
MTM86727
MTM86727
marking JE FET
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MTM15624
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package Overview Code Mini5-G1 Pin Name 1: Cathode 2: Drain
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MTM15624
MTM15624
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16 Low Drain-source On-state Resistance : RDS on typ = 92 m (VGS = -4.0 V) Low drive voltage: 1.8 V drive
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MTM131270BBF
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF MTM232270LBF Silicon N-channel MOS FET Unit : mm For switching MTM13227 in SMini3 type package 2.0 0.3 • Features 0.15 3 1.25 2.1 Low drain-source On-state resistance : RDS on typ = 85 m (VGS = 4.0 V)
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TT4-EA-13115
MTM232270LBF
MTM13227
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12901 Revision. 3 Product Standards MOS FET MTM232230LBF MTM232230LBF Silicon N-channel MOS FET Unit : mm For switching 2.0 0.3 • Features 0.15 3 1.25 2.1 Low drain-source On-state resistance : RDS on typ = 20 m (VGS = 4.0 V) Low drive voltage: 2.5 V drive
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TT4-EA-12901
MTM232230LBF
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16 Low Drain-source On-state Resistance : RDS on typ = 92 m (VGS = -4.0 V) Low drive voltage: 1.8 V drive
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TT4-EA-13636
MTM131270BBF
UL-94
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Mtm76320
Abstract: MTM7632
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS
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MTM76320
MTM76320
mW/100
MTM7632
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mtm76325
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS
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MTM76325
MTM76325
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FET MARKING CODE
Abstract: MTM86627A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Code WSSMini6-F1 Pin Name
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MTM86627A
MTM86asures
FET MARKING CODE
MTM86627A
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14584 Revision. 2 Product Standards MOS FET MTM131230BBF MTM131230BBF Silicon P-channel MOSFET Unit : mm 2.9 For switching 0.4 0.16 3 • Features 1.5 2.8 Low drain-source ON resistance : RDS on typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant
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MTM131230BBF
UL-94
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8641 6 pin SOT
Abstract: FH1G GL 7837 fh1 sot-89 marking code GaAS fet sot89
Text: FH1 The Communications Edge TM High Dynamic Range FET Product Features • • • • • • • 50 – 3000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years
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OT-89
1-800-WJ1-4401
8641 6 pin SOT
FH1G
GL 7837
fh1 sot-89 marking code
GaAS fet sot89
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12099 Revision. 2 Product Standards MOS FET MTM684100LBF MTM684100LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features Low drain-source On-state Resistance RDS on typ. = 32 m (VGS =-4.0 V) Low drive voltage:1.8V drive
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MTM684100LBF
UL-94
MTM23110
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MTM761100L
Abstract: No abstract text available
Text: Doc No. TT4-EA-10443 Revision. 2 Product Standards MOS FET MTM761100LBF MTM761100LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1 Low Drain-source On-state Resistance : RDS on typ. = 30 m (VGS = -4.0 V)
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TT4-EA-10443
MTM761100LBF
UL-94
MTM761100L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF MTM982400BBF Silicon N-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0 • Features Low drain-source On-state Resistance RDS on typ = 29 m (VGS = 5.0 V) Halogen-free / RoHS compliant
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TT4-EA-10241
MTM982400BBF
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