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    FET MARKING QG Search Results

    FET MARKING QG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    FET MARKING QG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y6 1.4


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    TT4-EA-13149 FM6L52020L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6


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    TT4-EA-13066 FL6L52060L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6


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    TT4-EA-13148 FL6L52030L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6


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    TT4-EA-13067 FL6L52070L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14213 Revision. 3 Product Standards MOS FET SK8603150L SK8603150L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 15 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 2.5 m  (VGS = 4.5 V)


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    TT4-EA-14213 SK8603150L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)


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    TT4-EA-14462 SK8603160L UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 19 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 10 m  (VGS = 4.5 V)


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    TT4-EA-14211 SK8603190L UL-94 12easures PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14480 Revision. 2 Product Standards MOS FET SK8603170L SK8603170L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 17 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.9 m  (VGS = 4.5 V)


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    TT4-EA-14480 SK8603170L UL-94 20easures PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 14 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 1.8 m  (VGS = 4.5 V)


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    TT4-EA-14461 SK8603140L UL-94 PDF

    14538

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15


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    TT4-EA-14538 SK8603300L UL-94 14538 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant


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    TT4-EA-14570 FC694308ER UL-94 FK330308 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant


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    TT4-EA-14543 FC694309ER UL-94 FK330309 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant


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    TT4-EA-14570 FC694308ER UL-94 FK330308 PDF

    mtm861270

    Abstract: MTM86127 mtm13127
    Text: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)


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    TT4-EA-10304 MTM861270LBF MTM13127 UL-94 mtm861270 MTM86127 PDF

    IRFH7911

    Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
    Text: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits


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    7427A IRFH7911PbF IRFH7911 IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits


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    IRFH7911PbF PDF

    AN1152

    Abstract: No abstract text available
    Text: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits


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    97427C IRFH7911PbF IRFH7911TRPBF IRFH7911TR2PBF PQ5/2011 AN-1152 AN-1136 AN1152 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A      Ã      ' *   6' * 1&   6     Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters


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    97427D IRFH7911PbF AN-1152 AN-1136 PDF

    IRFH7911TRPBF

    Abstract: No abstract text available
    Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A      Ã      ' *   6' 1& *   6     Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters


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    97427D IRFH7911PbF IRFH7911TRPBF IRFH7911TR2PBF x5/2011 AN-1152 AN-1136 PDF

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications  Control and Synchronous MOSFETs for synchronous buck converters


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    IRFH4253DPbF PDF

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications  Control and Synchronous MOSFETs for synchronous buck converters


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    IRFH4251DPbF PDF

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications  Control and Synchronous MOSFETs for synchronous buck converters


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    IRFH4253DPbF PDF

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications  Control and Synchronous MOSFETs for synchronous buck converters


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    IRFH4251DPbF PDF

    IRFH7911TRPBF

    Abstract: No abstract text available
    Text: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits


    Original
    97427B IRFH7911PbF IRFH7911TRPBF PDF