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    FET MARKING Y2 Search Results

    FET MARKING Y2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    FET MARKING Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6


    Original     		PDF TT4-EA-13066 FL6L52060L UL-94

    Q62702-F1372

    Abstract: No abstract text available
    Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    Original     		PDF Q62702-F1372 OT-23 Q62702-F1372

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    gaas fet marking a

    Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm


    Original     		PDF Q62702-L96 gaas fet marking a cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    Q62702-L96

    Abstract: No abstract text available
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 Q62702-L96

    fet marking y2

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5206 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FL6L5206 is P-channel single type small signal MOS FET with SBD


    Original     		PDF 2002/95/EC) FL6L5206 FL6L5206 FL6L52060L fet marking y2

    Texas Instruments TTL

    Abstract: ALVC16425 CD4066B spice model LVT - Low-Voltage BiCMOS Technology working principle of ic cd4066 CD4054B SCHEMATIC AND PIN DETAILS TI audio squelch can CU384A CD4053 spice MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
    Text: Signal Switch Including Digital/Analog/Bilateral Switches and Voltage Clamps Data Book Introducing Three New Bus-Switch Families S CB3Q High-Bandwidth Bus Switch S CB3T Low-Voltage Translator Bus Switch S CBT- C Bus Switch With –2-V Undershoot Protection


    Original     		PDF CD4000 R-PBGA-N20) 4204492/A MO-225 Texas Instruments TTL ALVC16425 CD4066B spice model LVT - Low-Voltage BiCMOS Technology working principle of ic cd4066 CD4054B SCHEMATIC AND PIN DETAILS TI audio squelch can CU384A CD4053 spice MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L52060L FL6L52060L Silicon P-channel MOSFET(FET) Unit: mm Silicon epitaxial planar type(SBD) For switching • Features  Low drain-source ON resistance:RDS(on) typ = 80 mΩ (VGS = -4.0 V)


    Original     		PDF 2002/95/EC) FL6L52060L UL-94 FL6L52060L

    Untitled

    Abstract: No abstract text available
    Text: FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Unit: mm Silicon epitaxial planar type(SBD) For switching • Features  Low drain-source ON resistance:RDS(on) typ = 80 mΩ (VGS = -4.0 V)  Low drive voltage: 1.8 V drive  Halogen-free / RoHS compliant


    Original     		PDF FL6L52060L UL-94 FL6L52060L

    XYZ7

    Abstract: No abstract text available
    Text: AP9060 OVERVOLTAGE CLAMP Description Pin Assignments AP9060 is designed to protect the latest generation of PMICs for W-DFN1114-3 portable applications such as Smartphones, UMPCs and others that utilize battery power. 1 The device, with its integrated low resistance p-channel MOSFET,


    Original     		PDF AP9060 AP9060 -DFN1114-3 DS36001 XYZ7

    Untitled

    Abstract: No abstract text available
    Text: AP9060 OVERVOLTAGE CLAMP Description Pin Assignments AP9060 is designed to protect the latest generation of PMICs for W-DFN1114-3 portable applications such as Smartphones, UMPCs and others that utilize battery power. 1 N EW PRODU CT The device, with its integrated low resistance p-channel MOSFET,


    Original     		PDF AP9060 AP9060 -DFN1114-3 DS36001

    IPC-SM-7351

    Abstract: SI3452B02GM
    Text: Si3452 Q UAD H IGH - VO L TAG E P ORT C O N T R O L L E R FOR P O E AND P O E+ PSE S Features  INT VOUT1 RST DET1 AD1 GND12 AD0 DET2 VOUT2 VEE2 39 38 37 36 35 34 33 32 31 VDD 29 DGND VREF 3 28 AD0 AIN 4 27 AD1 AOUT 5 26 AD2 AGND 6 25 AD2 RBIAS 7 24 AD3


    Original     		PDF Si3452 Si3452 IPC-SM-7351 SI3452B02GM

    hp laptop MOTHERBOARD pcb CIRCUIT diagram

    Abstract: hp laptop battery pack pinout SCBD002C hp laptop battery pinout sn74154 SN74LVC1G373 SDFD001B 4052 IC circuit diagram lg crt monitor circuit diagram PLL CD 4046
    Text: LOGIC OVERVIEW 1 PRODUCT INDEX 2 FUNCTIONAL CROSS−REFERENCE 3 DEVICE SELECTION GUIDE 4 PACKAGING AND MARKING INFORMATION A LOGIC PURCHASING TOOL/ALTERNATE SOURCES B LOGIC SELECTION GUIDE SECOND HALF 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,


    Original     		PDF

    PLL WITH VCO 4046 appli note philips

    Abstract: CD74HC4050 marking microstar ms 4011 CI 40106 8952 microcontroller ic 4017 decade counter datasheet ic HC 4066 AG GK 7002 7 SEGMENT DISPLAY LT 543 PIN CONFIGURATION LA 4508 as af power amplifier
    Text: LOGIC OVERVIEW 1 PRODUCT INDEX 2 FUNCTIONAL CROSS−REFERENCE 3 DEVICE SELECTION GUIDE 4 PACKAGING AND MARKING INFORMATION A LOGIC PURCHASING TOOL/ALTERNATE SOURCES B LOGIC SELECTION GUIDE FIRST HALF 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,


    Original     		PDF

    0949

    Abstract: F 739 DC Q62702-F1215
    Text: CF 739 GaAs FET ● ● ● ● ● CF 739 N-channel dual-gate GaAs MES FET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise High gain Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1215 OT-143 0949 F 739 DC Q62702-F1215

    F 739 DC

    Abstract: gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms
    Text: GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1215 OT-143 F 739 DC gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms

    74LS series logic gates 3 input or gate

    Abstract: sn74 series TTL logic gates list 4017 counter IC datasheet data sheet ic 4017 IC CD 4033 pin configuration CMOS Data Book Texas Instruments Incorporated 74LS series logic gates hp 4514 TEXAS INSTRUMENTS SN7400 SERIES ic 4026 down counter
    Text: LOGIC OVERVIEW 1 FOCUS ON THE IDEAL LITTLE LOGIC SOLUTION 2 FUNCTIONAL INDEX 3 FUNCTIONAL CROSSĆREFERENCE 4 DEVICE SELECTION GUIDE 5 PACKAGING AND MARKING INFORMATION A LOGIC PURCHASING TOOL/ALTERNATE SOURCES B LOGIC SELECTION GUIDE FIRST HALF 2002 IMPORTANT NOTICE


    Original     		PDF

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    MARKING CODE 21S

    Abstract: 12NA50
    Text: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped


    OCR Scan     		PDF Q62702-F1230 OT-23 MARKING CODE 21S 12NA50

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 siemens gaas fet TMS 1600 marking S221

    2SK1845

    Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
    Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.


    OCR Scan     		PDF ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511