Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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AN569
Abstract: MTP1306
Text: MOTOROLA Order this document by MTP1306/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 30 VOLTS RDS on = 0.0065 OHM This advanced high–cell density HDTMOS power FET is
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MTP1306/D
MTP1306
AN569
MTP1306
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AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
MTP12N06EZL/D*
AN569
MTP12N06EZL
mosfet transistor 400 volts.100 amperes
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ISL6258
Abstract: isl6266a 48v 2.5a charger using uc3842 ISL6726 ISL6258A 40A 48v charger Schematic Diagram uc3842 battery charger schematic schematic diagram 48v ac regulator uc3842 isl6266 24v dc power supply with uc3842
Text: Intersil Power Management Solutions 2010 Product Selection Guide Inside: Battery Management Digital Power Drivers FET Drivers Hot Plug Controllers Integrated FET Switching Regulators Isolated PWM Controllers LDO / Linear Regulators ORing FET Controllers PMIC
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1-888-INTERSIL
LC-043
ISL6258
isl6266a
48v 2.5a charger using uc3842
ISL6726
ISL6258A
40A 48v charger Schematic Diagram
uc3842 battery charger schematic
schematic diagram 48v ac regulator uc3842
isl6266
24v dc power supply with uc3842
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MTP75N03HDL
Abstract: MTP75N03HDL/D
Text: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES
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MTP75N03HDL/D
MTP75N03HDL
MTP75N03HDL/D*
MTP75N03HDL
MTP75N03HDL/D
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ISL6258
Abstract: ISL6258A UC3842 smps design isl6266a schematic diagram 48v ac regulator uc3842 48v 2.5a charger using uc3842 24v dc power supply with uc3842 schematic diagram 48v dc motor speed controller schematic diagram 48v regulator uc3842 uc3842 half bridge
Text: INTERSIL SELECTION GUIDE POWER MANAGEMENT Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors
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1-888-INTERSIL
LC-043
ISL6258
ISL6258A
UC3842 smps design
isl6266a
schematic diagram 48v ac regulator uc3842
48v 2.5a charger using uc3842
24v dc power supply with uc3842
schematic diagram 48v dc motor speed controller
schematic diagram 48v regulator uc3842
uc3842 half bridge
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ISL95835
Abstract: isl6258 ISL6258A ups circuit schematic diagram 1000w 1000w class d circuit diagram schematics 1000w SMPS CIRCUIT DIAGRAM ISL95831 1000W full bridge regulator 15000w power amplifier circuit diagram SCHEMATIC 12v 1000w smps
Text: INTERSIL SELECTION GUIDE POWER Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators, LED Drivers ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors
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1-888-INTERSIL
D-85737
LC-043
ISL95835
isl6258
ISL6258A
ups circuit schematic diagram 1000w
1000w class d circuit diagram schematics
1000w SMPS CIRCUIT DIAGRAM
ISL95831
1000W full bridge regulator
15000w power amplifier circuit diagram
SCHEMATIC 12v 1000w smps
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LED interfacing with MSP430
Abstract: MSP-FETP430IF MSP430Fe4xx "Optical Couplers" Connector d-sub 25 pin msp430 motor MSP430Fxxx Optical Couplers SBOS032 311-1142-1-ND
Text: Application Report SLAA184 –October 2003 MSP430 Isolated FET Interface Andreas Dannenberg MSP430 ABSTRACT This application report describes how to build an isolated FET interface for the MSP430 Flash Emulation Tool FET . When developing and debugging line-powered MSP430
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SLAA184
MSP430
MSP430
ISO150
LED interfacing with MSP430
MSP-FETP430IF
MSP430Fe4xx
"Optical Couplers"
Connector d-sub 25 pin
msp430 motor
MSP430Fxxx
Optical Couplers
SBOS032
311-1142-1-ND
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NE70083
Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
24-Hour
NE70083
NE372800
AN83901
NE71083
Matching Transformer - line matching transformed
AN-PF-1007
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AS4321
Abstract: MGFC45B3436B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC45B3436B
MGFC45B3436B
-45dBc
GF-60
25deg
AS4321
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EVM12
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC45B3436B
MGFC45B3436B
-45dBc
EVM12
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NE70083
Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,
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AN-PF-1007
NE430,
NE345L,
NE372
NE70083
planar transformer theory
small signal GaAs FET
x-band microwave fet
NE71083
DLI-1988-1
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MTP75N06HD
Abstract: AN569
Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM
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MTP75N06HD/D
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MTP75N06HD/D*
MTP75N06HD
AN569
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MARKING code VO SMD fet
Abstract: marking cdm smd 2a 3 PIN fet FET Design Catalog
Text: INTEGRATED CIRCUITS CBT3125 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3125 DESCRIPTION PIN CONFIGURATION The CBT3125 quadruple FET bus switch features independent line
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CBT3125
ICL03
CBT3125
125-type
JESD78
SA00562
08-Jan-03)
MARKING code VO SMD fet
marking cdm
smd 2a 3 PIN fet
FET Design Catalog
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AN569
Abstract: MTB60N05HDL SMD310
Text: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N05HDL Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM
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MTB60N05HDL/D
MTB60N05HDL
AN569
MTB60N05HDL
SMD310
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AN569
Abstract: MTD20N06HDL SMD310 MTD20N06HDL-D
Text: MOTOROLA Order this document bt MTD20N06HDL/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD20N06HDL HDTMOS E-FETāā High Density Power FET DPAK for Surface Mount or Insertion Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES
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MTD20N06HDL/D
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MTD20N06HDL/D*
AN569
MTD20N06HDL
SMD310
MTD20N06HDL-D
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AN569
Abstract: MTB75N03HDL SMD310
Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM
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MTB75N03HDL/D
MTB75N03HDL
MTB75N03HDL/D*
AN569
MTB75N03HDL
SMD310
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AN569
Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM
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MTP75N06HD/D
MTP75N06HD
MTP75N06HD/D*
AN569
MTP75N06HD
HDTMOS
TRANSISTOR motorola 838
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB35N06ZL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB35N06ZL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 35 AMPERES 60 VOLTS RDS on = 26 mΩ N–Channel Enhancement–Mode Silicon Gate
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MTB35N06ZL/D
MTB35N06ZL
MTB35N06ZL/D*
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W N–Channel Enhancement–Mode Silicon Gate
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MTB60N10E7L/D
MTB60N10E7L/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to
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MTP75N06HD/D
MTP75N06HD
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bi 370 transistor e
Abstract: bi 370 transistor
Text: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E-FET High Density Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mQ T his advanced high cell d ensity HDTM OS pow er FET is
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MTP1302/D
bi 370 transistor e
bi 370 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
21A-06,
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transistor z3m
Abstract: Z3M IC z3m Transistor Z3M Y
Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM
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MTB75N03HDL/D
2PHX43416-0
transistor z3m
Z3M IC
z3m Transistor
Z3M Y
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