TC-2303
Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its
|
Original
|
NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
TC-2303
NEC 3377
transistor NEC D 582
transistor NEC D 587
NE76184A-SL
NE76184A-T1
NE76184A-T1A
p1085
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM76720
MTM76720
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM86727
MTM86727
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM86727
MTM86727
|
PDF
|
FC654601
Abstract: FET MARKING CODE FET MARKING
Text: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter
|
Original
|
FC654601
FC654601
FET MARKING CODE
FET MARKING
|
PDF
|
XP133A0245SR
Abstract: PCB405
Text: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP133A0245SR
XP133A0245SR
PCB405
|
PDF
|
XP133A1145SR
Abstract: No abstract text available
Text: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP133A1145SR
XP133A1145SR
|
PDF
|
XP133A0175SR
Abstract: No abstract text available
Text: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP133A0175SR
XP133A0175SR
|
PDF
|
FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
|
Original
|
2002/95/EC)
FG654301
FG654301
FET2
|
PDF
|
SGM2016AM
Abstract: SGM2016AP dual-gate
Text: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
|
Original
|
SGM2016AM/AP
SGM2016AM/AP
SGM2016AM
SGM2016AP
900MHz
M-254
SGM2016AM
SGM2016AP
dual-gate
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
|
Original
|
SGM2014AN
SGM2014AN
M-281
900MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGM2014AM GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF
|
Original
|
SGM2014AM
SGM2014AM
900MHz
M-254
|
PDF
|
SGM2014AM
Abstract: No abstract text available
Text: SGM2014AM GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
|
Original
|
SGM2014AM
SGM2014AM
900MHz
M-254
|
PDF
|
SGM2014AN
Abstract: No abstract text available
Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
|
Original
|
SGM2014AN
SGM2014AN
M-281
900MHz
|
PDF
|
|
|
SG 2368
Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its
|
OCR Scan
|
NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SG 2368
LS 2027 audio amp
c 2688 nec
LS 2027 amp
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band
|
OCR Scan
|
NEZ3642-4D,
|
PDF
|
sd2t
Abstract: No abstract text available
Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HITACHI ADE-208-503 1st. Edition Features This FET has the over temperature shut-dow n capability sensing to the junction temperature. This FET has the built-in over temperature shut-dow n circuit in the gate area. And this circuit
|
OCR Scan
|
HAF2002
ADE-208-503
-220FM
HAF2001.
sd2t
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-2E 2 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N EZ10 1 1-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in XGate
|
OCR Scan
|
NEZ1011-2E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO N Y SGM2016AN GaAs N-channel Dual-Gate MES FET Prelim inary Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
|
OCR Scan
|
SGM2016AN
SGM2016AN
900MHz
M-281
|
PDF
|
NEC 2561
Abstract: sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.
|
OCR Scan
|
NE6501077
NE6501077
NEC 2561
sn 1699
NEC 2561 E
2561 a nec
sn 0952
2561 nec
nec d 1590
NEC semiconductor 2561
NEC 1357
NEC 2561 h
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0911A n iv n a b v L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 1 1 A , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U n it: m illim eters FEATURES • •
|
OCR Scan
|
MGF0911A
GF-21
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
NE850R599A
NE850R599A
CODE-99
|
PDF
|
NEC Ga FET marking Rf
Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
|
OCR Scan
|
NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
IR30-00
NEC Ga FET marking Rf
nec gaas fet marking
|
PDF
|
cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
|
PDF
|
