MTM86627
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
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MTM86627
MTM86627
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FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
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FG654301
FG654301
FET2
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XP134A11A1SR
Abstract: No abstract text available
Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
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XP134A11A1SR
XP134A11A1SR
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XP134A01A9SR
Abstract: No abstract text available
Text: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
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XP134A01A9SR
XP134A01A9SR
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FG694301
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG694301 is N-P channel dual type small signal MOS FET employed small
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FG694301
FG694301
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FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
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FG654301
FG654301
FET2
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XP134A02A1SR
Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
Text: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state
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XP134A02A1SR
XP134A02A1SR
Vds10V
XP134A11A1SR
XP134A1275SR
XP135A1145SR
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Pch MOS FET
Abstract: US6M2 TUMT6
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.
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85Max.
15Max.
Pch MOS FET
US6M2
TUMT6
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QS6M4
Abstract: TSMT6 Pch MOS FET m04 fet
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5201 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5201 is P-channel single type small signal MOS FET with SBD
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FL6L5201
FL6L5201
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5207 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5207 is P-channel single type small signal MOS FET with SBD
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FL6L5207
FL6L5207
FL6L52070L
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fet marking y2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5206 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5206 is P-channel single type small signal MOS FET with SBD
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FL6L5206
FL6L5206
FL6L52060L
fet marking y2
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MTM76320
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS
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MTM76320
MTM76320
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sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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mtm76325
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS
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MTM76325
MTM76325
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XP132A01A0SR
Abstract: No abstract text available
Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state
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XP132A01A0SR
XP132A01A0SR
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2SJ243
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05
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2SJ243
2SJ243
C10535E
MEI-1202
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FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG6K4206 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package FG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is
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FG6K4206
FG6K4206
FET2
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8A SOT-89
Abstract: XP162A02D5PR
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
8A SOT-89
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XP162A02D5PR
Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
XP162A11C0PR
XP162A12A6PR
sot89 fet
XP162A11
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XP132A0265SR
Abstract: No abstract text available
Text: XP132A0265SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.065Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A0265SR is a P-Channel Power MOS FET with low on-state
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XP132A0265SR
XP132A0265SR
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hitachi fet
Abstract: Hitachi 2SJ fet array 2SJ series
Text: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E
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ADE-408-002E
hitachi fet
Hitachi 2SJ
fet array
2SJ series
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB2P50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2P50E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate
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MTB2P50E/D
MTB2P50E
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4600 fet transistor
Abstract: POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 MTD20P06HDL Z25 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL HDTM OS E-FET™ High D en sity P o w er FET DPAK fo r S u rface M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS
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il180
li120
MTD20P06HDL
0E-05
0E-04
0E-02
0E-01
4600 fet transistor
POWER MOSFET 4600
MOSFET 4600
4600 mosfet
369A-13
AN569
Z25 transistor
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