XP134A11A1SR
Abstract: No abstract text available
Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
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XP134A11A1SR
XP134A11A1SR
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FET2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small
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FG654301
FG654301
FET2
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5207 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5207 is P-channel single type small signal MOS FET with SBD
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FL6L5207
FL6L5207
FL6L52070L
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fet marking y2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5206 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5206 is P-channel single type small signal MOS FET with SBD
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FL6L5206
FL6L5206
FL6L52060L
fet marking y2
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2SJ243
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05
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2SJ243
2SJ243
C10535E
MEI-1202
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL525205 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview Code Mini5-G3-B FL525205 is the P-channel single type small signal MOS FET with SBD.
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FL525205
FL525205
FL5252050L
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TC-2329A
Abstract: F16V 2SJ207 IEI-1213 iei-1209
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con
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2SJ207
2SJ207,
TC-2329A
F16V
2SJ207
IEI-1213
iei-1209
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJE0617JSP R07DS1070EJ0400 Rev.4.00 Sep 13, 2013 –60V, –1.5A, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJE0617JSP
R07DS1070EJ0400
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2SJ202
Abstract: 2SK1580 T100 T200
Text: MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING The 2SJ202 is an P-channel vertical type MOS FET w hich can be OUTLINE DIMENSIONS Unit : mm driven by 2.5 V power supply. 2.1 ± 0.1 As the MOS FET is driven by low voltage and does n o t require con
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2SJ202
2SK1580
T100
T200
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FET differential amplifier circuit
Abstract: fet differential amplifier schematic DC bias of gaas FET
Text: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)
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T500 I2 60 05 AT
Abstract: 2SJ212 T500 7748b IEI-1209
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching
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2SJ212
2SJ212,
T500 I2 60 05 AT
2SJ212
T500
7748b
IEI-1209
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HAF1009
Abstract: No abstract text available
Text: HAF1009 L , HAF1009(S) Silicon P Channel MOS FET Series Power Switching REJ03G0029-0100Z (Previous ADE-208-1525 (Z) Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
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HAF1009
REJ03G0029-0100Z
ADE-208-1525
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJE0607JSP R07DS0123EJ0200 Previous: REJ03G1876-0100 Rev.2.00 Sep 01, 2010 Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJE0607JSP
R07DS0123EJ0200
REJ03G1876-0100)
circui9044
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PMK35EP
Abstract: No abstract text available
Text: PMK35EP P-channel TrenchMOS extremely low level FET Rev. 01 — 17 September 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PMK35EP
OT96-1
001aaa025
PMK35EP
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PMK30EP
Abstract: No abstract text available
Text: PMK30EP P-channel TrenchMOS extremely low level FET Rev. 02 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PMK30EP
001aaa025
PMK30EP
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7741B
Abstract: 2SJ205
Text: DATA SHEET MO S FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING The 2SJ205, P-channel vertical type MOS FET, is a switching device PACKAG E DIMENSIONS U n it: mm which can be driven by 3 V power supply. As the MOS FET is driven by lo w voltage and does n o t require con
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2SJ205,
7741B
2SJ205
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G1133
Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.
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PA1523B
PA1523B
PA1523BH
G1133
C10535E
C10943X
MEI-1202
6 PIN case mos fet p-channel
uPA1523BH
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PA1523BH
Abstract: TEA-1037 C10535E C10943X MEI-1202 TEA-1035
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR mPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The mPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.
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PA1523B
PA1523B
PA1523BH
TEA-1037
C10535E
C10943X
MEI-1202
TEA-1035
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM68411 Silicon P-channel MOS FET For load switch circuits For switching circuits • Overview Package MTM68411 is the low ON resistance dual P-channel MOS FET designed for load switch circuits.
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MTM68411
MTM68411
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C10535E
Abstract: MEI-1202 PA505T marking FA fet transistor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the
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PA505T
SC-59
PA505T
C10535E
MEI-1202
marking FA
fet transistor
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2SJ203
Abstract: T200 T400
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ203 P-CHANNEL M O S FET FOR S W IT C H IN G The 2SJ203 is a P-channel vertical typ e MOS FET w hich can be driven PACKAGE DIMENSIONS Unit : mm by a 2.5 V power supply. 2.8 + 0.2 As the MOS FET is driven by low voltage and does not require con
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2SJ203
T200
T400
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FR 151 diode
Abstract: Fly DS 100
Text: 2SK1278 FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • Heatures lO utline D raw ings • lr elude fa st recovery diode • High voltage • Low driving p o w er ■ A p p lic a tio n s • IV o to r controlers • lr verters • C io p p o rs
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2SK1278
538B-76B1
FR 151 diode
Fly DS 100
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2SJ165
Abstract: 75178 2SK1132 7517b
Text: MOS FIELD EFFECT TRANSISTOR 2SJ165 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SJ165, P-channel vertical type MOS FET, is a sw itching device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching
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2SJ165
2SJ165,
2SJ165
75178
2SK1132
7517b
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2SJ210
Abstract: MARK H16 2SJ21 T200 T400
Text: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5
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2SJ210
2SJ210,
2SJ210
MARK H16
2SJ21
T200
T400
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