Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain
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RD00HHS1
30MHz
RD00HHS1
30MHz
RD00HHS1-101
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RD 15 hf mitsubishi
Abstract: TRANSISTOR 7533 A RD00HHS1-101
Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain
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RD00HHS1
30MHz
RD00HHS1
30MHz
RD00HHS1-101
Oct2011
RD 15 hf mitsubishi
TRANSISTOR 7533 A
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2SK2973
Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.
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2SK2973
2SK2973
450MHz
17dBm
OT-89
OT-89
Conditi38
165082
mf 102 fet equivalent
hd 9729
transistor t 2190
GR40-220
ic 7448
marking c7 sot-89
75458
88284
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device
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ILD1011M30
ILD1011M30
ILD1011M30-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device
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ILD1011M15
ILD1011M15
ILD1011M15-REV-NC-DS-REV-B
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High voltage GaAs FET
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm APPLICATION
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FA01220A
FA01220A
Po--30
1453M
High voltage GaAs FET
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093.216
Abstract: 2sk2974 093.941 transistor 2sk2974
Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB
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2SK2974
2SK2974
450MHz
30dBm
600mA
093.216
093.941
transistor 2sk2974
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1214M10 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability Gold Metal The high power transistor part number ILD1214M10 is designed for LBand radar operating at 1200-1400 MHz. This LDMOS FET device under
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ILD1214M10
ILD1214M10
300us,
300us-10%
ILD1214M10-REV-PR1-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)
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FA01317
FA01317
M5M27C102P,
RV-15
16-BIT)
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acp 100k
Abstract: ACP-100k FA01220A
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm
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FA01220A
FA01220A
1453MHz
-50kHz)
50kHz)
-100kHz)
100kHz)
acp 100k
ACP-100k
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fet 547
Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm
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FA01219A
FA01219A
925MHz
fet 547
MA644
90 HYBRID 70 mhz rf power
acp 100k
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rd15hvf
Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:
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RD15HVF1
175MHz520MHz
RD15HVF1
175MHz
520MHz
Oct2011
rd15hvf
RF Transistor s-parameter 30W
transistor d 1302
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rd15hvf
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:
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RD15HVF1
175MHz520MHz
RD15HVF1
175MHz
520MHz
rd15hvf
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.
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ILD0912M400HV
ILD0912M400HV
960-1215MHz.
ILD0912M400HV-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> OOlfiObT 2T2 FA01314 GaAs FET HYBRID IC DESCRIPTION FA01314 is RF Hybrid IC designed for 1 ,7GHz band small size hand held radio. FEATURES 40 % • High efficiency • High power • High gain • Small size • Frequency range
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FA01314
FA01314
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM3742-4SL
TIM3742-4UL
95GHz
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tim8996-30
Abstract: 7-AA03A
Text: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM8996-30
7-AA03A)
tim8996-30
7-AA03A
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM5359-4UL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM5964-30UL
2-16G1B)
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM6472-30UL
7-AA05A)
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5964-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM5964-6UL
Int38
15GHz
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM7785-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM7785-30UL
7-AA05A)
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM4450-4UL
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TIM7785-4UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM7785-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM7785-4UL
TIM7785-4UL
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