pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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FET differential amplifier circuit
Abstract: fet differential amplifier schematic DC bias of gaas FET
Text: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band
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NEZ3642-4D,
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hitachi fet
Abstract: Hitachi 2SJ fet array 2SJ series
Text: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E
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ADE-408-002E
hitachi fet
Hitachi 2SJ
fet array
2SJ series
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nec 2571 4 pin
Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band
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NEZ3642-4D,
NEZ4450-4D,
NEZ5964ter
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NE85002
Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.
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NE85002
NE8500295
NE8500200
NE8500200
NE8500200-RG
NE8500200-WB
NE8500295-4
NE8500295-6
NE8500295-8
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Nec K 872
Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
Nec K 872
NE8500100-RG
NE8500100-WB
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Hitachi DSA002732
Abstract: No abstract text available
Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-503 1st. Edition Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
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HAF2002
ADE-208-503
Hitachi DSA002732
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NEC 1357
Abstract: Nec K 872
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
NEC 1357
Nec K 872
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PDF
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Hitachi DSA002759
Abstract: No abstract text available
Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-503 1st. Edition Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
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HAF2002
ADE-208-503
Hitachi DSA002759
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mW
500mW
15Min.
85Max.
15Max.
2sc5922
2SC5734
2SC5917
2SC5989
2SA2054
2sc5919
2SC5987
2SC5734K
2SC5918
2SC5982
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nec d 1590
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.
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NE85002
NE8500295
NE8500200
CODE-95
nec d 1590
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sd2t
Abstract: No abstract text available
Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HITACHI ADE-208-503 1st. Edition Features This FET has the over temperature shut-dow n capability sensing to the junction temperature. This FET has the built-in over temperature shut-dow n circuit in the gate area. And this circuit
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OCR Scan
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HAF2002
ADE-208-503
-220FM
HAF2001.
sd2t
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0604JPD R07DS0583EJ0200 Rev.2.00 Apr 13, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0604JPD
R07DS0583EJ0200
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0610JSP R07DS0568EJ0100 Rev.1.00 Nov 04, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0610JSP
R07DS0568EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0611JPD R07DS0581EJ0100 Rev.1.00 Nov 22, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0611JPD
R07DS0581EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0200 Rev.2.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0606JPE
R07DS0580EJ0200
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0604JPD R07DS0583EJ0100 Rev.1.00 Nov 22, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0604JPD
R07DS0583EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0611JPD R07DS0581EJ0200 Rev.2.00 Apr 13, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0611JPD
R07DS0581EJ0200
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0611DPD R07DS0716EJ0100 Rev.1.00 Apr 17, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0611DPD
R07DS0716EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0605DPD R07DS0714EJ0100 Rev.1.00 Apr 17, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0605DPD
R07DS0714EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0611DPE Silicon N Channel MOS FET Series Power Switching R07DS0717EJ0100 Rev.1.00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0611DPE
R07DS0717EJ0100
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Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0605DPD R07DS0714EJ0100 Rev.1.00 Apr 17, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
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RJF0605DPD
R07DS0714EJ0100
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