rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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90n0212sma
Abstract: SOT233
Text: MOS FET N-CHANNEL POWER MOS FET FOR SWITCHING The S-90N series is an N-channel power MOS FET that realizes a low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate
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S-90N
OT-23-3
OT-89-3
OT-23-3,
OT-89-3,
S-90N0113SMA
S-90N0133SUA
S-90N0212SMA
S-90N0232SUA
90n0212sma
SOT233
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XP161A02A1PR
Abstract: No abstract text available
Text: XP161A02A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A02A1PR is a N-Channel Power MOS FET with low on-state
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XP161A02A1PR
OT-89
XP161A02A1PR
OT-89
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XP161A01A8PR
Abstract: No abstract text available
Text: XP161A01A8PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.18Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A01A8PR is a N-Channel Power MOS FET with low on-state
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XP161A01A8PR
OT-89
XP161A01A8PR
OT-89
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8A SOT-89
Abstract: XP162A02D5PR
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
8A SOT-89
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XP162A02D5PR
Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
XP162A11C0PR
XP162A12A6PR
sot89 fet
XP162A11
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XP161A0390PR
Abstract: No abstract text available
Text: XP161A0390PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.09Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A0390PR is a N-Channel Power MOS FET with low on-state
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XP161A0390PR
OT-89
XP161A0390PR
OT-89
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XP162A01B5PR
Abstract: No abstract text available
Text: XP162A01B5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.25Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
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XP162A01B5PR
OT-89
XP162A01B5PR
OT-89
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NE5500234
Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Text: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate
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NE5500234
DCS1800/PCS1900
NE5500234
DCS1800
PCS1900
OT-89
nec RF package SOT89
nec 2501
marking v2
FRS transceiver
NE5500234-T1-AZ
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XP161A1265PR
Abstract: No abstract text available
Text: XP161A1265PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.055Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A1265PR is a N-Channel Power MOS FET with low on-state
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XP161A1265PR
OT-89
XP161A1265PR
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nec 2501
Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Text: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate
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NE5500134
NE5500134
OT-89
nec 2501
nec RF package SOT89
nec marking power amplifier
NEC MARKING CODE
code marking NEC
date code marking NEC
FET SOT-89 N-Channel
HS350
sot89 fet
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NE5500434
Abstract: nec RF package SOT89 nec 2501
Text: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS
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NE5500434
NE5500434
OT-89
nec RF package SOT89
nec 2501
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XP161A11A1PR
Abstract: sot 89 MOS FET
Text: XP161A11A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A11A1PR is a N-Channel Power MOS FET with low on-state
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XP161A11A1PR
OT-89
XP161A11A1PR
sot 89 MOS FET
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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XP161A01A8PR
Abstract: No abstract text available
Text: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.18Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-89 Package
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NSOT-89
XP161A01A8PR
OT-89
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XP161A1355PR
Abstract: No abstract text available
Text: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.05Ω max ●Cellular and portable phones ◆Ultra High-Speed Switching ◆SOT-89 Package ●On-board power supplies ●Li-ion battery systems
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NSOT-89
XP161A1355PR
OT-89
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XP161A0390PR
Abstract: No abstract text available
Text: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.09Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-89 Package
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NSOT-89
XP161A0390PR
OT-89
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SMD CODE MARKING s7 SOT23
Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes
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applicat174
PMBFJ175
PMBFJ176
PMBFJ177
OT-23
OT-89
OT-143
OT-223
OT-23
SMD CODE MARKING s7 SOT23
PMBFJ111
PMBFJ174
BSR56
BFT46
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2SK2973
Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.
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2SK2973
2SK2973
450MHz
17dBm
OT-89
OT-89
Conditi38
165082
mf 102 fet equivalent
hd 9729
transistor t 2190
GR40-220
ic 7448
marking c7 sot-89
75458
88284
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hd 9729
Abstract: 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89
Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 ¡s a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm VHF/UHF power amplifiers applications. 1.5±0.1 FEATURES • High power gain:Gpe^13dB @ VDD-9.6V ,f"450MHz, Pin=17dBm
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2SK2973
450MHz,
17dBm
OT-89
OT-89
hd 9729
2SK2973
45980
78268
75458
75182
0L sot-89
944 SOT-89
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m8p smd
Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
Text: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own
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OT-23
OT-89
OT-143
OT-223
OT-223
OT-69
m8p smd
sot-23 MARKING CODE 70.2
fet SMD CODE PACKAGE SOT23
sot-23 MARKING CODE GS
PMBF310
Philips fet SOT23 code marking
M2P smd
marking code MHP smd
sot-23 MARKING CODE GS 5
marking 702 sot-23
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toshiba fet
Abstract: No abstract text available
Text: Features and Structure POWER MOS FET Power MOS FET 1 Outstanding switching and frequency characteristics without carrier storage effect. (2) Ragged without current concentration. (3) Low driving power due to voltage-controlling device. (4) Easy parallel connections.
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2SK2267)
2SK1489)
OT-89)
toshiba fet
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j 6815 transistor
Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .
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RD00HVS1
175MHz
RD00HVS1
175MHz
48MAX
OT-89
j 6815 transistor
TRANSISTOR J 6815 EQUIVALENT
C 5763 transistor
transistor M 9718
5609 transistor
4082 mitsubishi
9622 transistor
4303 sot89
8948
780-4 transistor
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