pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3507 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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2SK3507
2SK3507
2SK3507-Z
O-251
O-252
O-251)
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d1593
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3635 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3635 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and
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2SK3635
2SK3635
2SK3635-Z
O-251
O-252
O-251/TO-252
O-251)
d1593
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d1333
Abstract: 2SK3113 2SK3113-Z 2SK3113 equivalent
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113
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2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
d1333
2SK3113-Z
2SK3113 equivalent
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PHU97NQ03LT
Abstract: No abstract text available
Text: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHU97NQ03LT
PHU97NQ03LT
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
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2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
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2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
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nq03lt
Abstract: PHP101NQ03LT NQ03LT-01 PHU101NQ03LT
Text: PHP/PHU101NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHP/PHU101NQ03LT
mbb076
PHU101NQ03LT
nq03lt
PHP101NQ03LT
NQ03LT-01
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2SK3113 equivalent
Abstract: 2SK3113 2SK3113-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113
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2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
2SK3113 equivalent
2SK3113-Z
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PHD 73
Abstract: PHD77NQ03T PHU77NQ03T jeita To-252
Text: PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 — 28 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Fast switching
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PHD/PHU77NQ03T
mbb076
OT428
PHU77NQ03T
PHD 73
PHD77NQ03T
jeita To-252
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PHD78NQ
Abstract: PHD78NQ03LT PHP78NQ03LT PHU78NQ03LT PHD78NQ03L SOT533 y 546 SOT-533
Text: PHU/PHD78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 — 27 July 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHU/PHD78NQ03LT
mbb076
OT533
PHD78NQ
PHD78NQ03LT
PHP78NQ03LT
PHU78NQ03LT
PHD78NQ03L
SOT533
y 546
SOT-533
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d1593
Abstract: 2SK3634 2SK3634-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications
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2SK3634
2SK3634
O-251
2SK3634-Z
O-252
O-251/TO-252
O-251)
d1593
2SK3634-Z
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2SK3634-Z
Abstract: D1593
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications
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2SK3634
2SK3634
2SK3634-Z
O-251
O-252
O-251/TO-252
O-251)
D1593
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PHD 73
Abstract: PHU108NQ03LT phb108nq03lt PHD108NQ03LT PHP108NQ03LT PHB108
Text: PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
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PHB/PHD/PHU108NQ03LT
PHD 73
PHU108NQ03LT
phb108nq03lt
PHD108NQ03LT
PHP108NQ03LT
PHB108
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2SK4080
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4080 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as
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2SK4080
2SK4080
2SK4080-S15-AY
O-251
O-252
2SK4080-ZK-E1-AY
2SK4080-ZK-E2-AY
O-251)
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D1806
Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3113B
2SK3113B
2SK3113B-S15-AY
-S27-AY
O-251
D1806
2SK3113B-S15-AY
2SK3113B-ZK-E2-AY
transistor types full
2SK3113B-ZK-E1-AY
MP 6102
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK4070
2SK4070
2SK4070-S15-AY
O-251
O-252ntrol
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2SK3113
Abstract: 2SK3113 equivalent 2SK3113-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3113 TO-251 2SK3113-Z TO-252 features a low gate charge and excellent switching
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2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
O-252)
2SK3113 equivalent
2SK3113-Z
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d1878
Abstract: d18785ej2v0ds 2SK4081 2SK4081-S15-AY 2SK4081-ZK-E1-AY 2SK4081-ZK-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4081 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK4081
2SK4081
2SK4081-S15-AY
-S27-AY
2SK4081-ZK-E1-AY
2SK4081-ZK-E2-AY
O-251
D18785EJ2V0DS
d1878
d18785ej2v0ds
2SK4081-S15-AY
2SK4081-ZK-E1-AY
2SK4081-ZK-E2-AY
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D1637
Abstract: 2SK3712 2SK3712-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
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2SK3712
2SK3712
O-251
2SK3712-Z
O-252
O-251/TO-252
O-251)
D1637
2SK3712-Z
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2SK3113 equivalent
Abstract: 2SK3113 2SK3113-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a ORDERING INFORMATION low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power
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2SK3113
2SK3113
O-251
2SK3113-Z
O-252
2SK3113 equivalent
2SK3113-Z
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D1637
Abstract: 2SK3712 2SK3712-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
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2SK3712
2SK3712
O-251
2SK3712-Z
O-252
O-251/TO-252
O-251)
D1637
2SK3712-Z
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D1637
Abstract: 2SK3712 2SK3712-Z 2SK3712Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
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2SK3712
2SK3712
O-251
2SK3712-Z
O-252
O-251/TO-252
O-251)
D1637
2SK3712-Z
2SK3712Z
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k3113
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 3113 is N-channel DMOS FET device that features a ORDERING INFORMATION Part Number low gate charge and excellent switching characteristics, and
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2SK3113
O-251
2SK3113-Z
O-252
k3113
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