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    FETS FAIRCHILD Search Results

    FETS FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FETS FAIRCHILD Datasheets Context Search

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    all mosfet equivalent book

    Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
    Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2


    Original     		PDF AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		PDF AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		PDF WP014

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


    Original     		PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    mosfet 7503

    Abstract: mosfet to ignition coil AN-7503 Ignition Transformer AN75 output characteristic of SCR GTO
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary Cretor DOCI FO dfark Page- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement


    Original     		PDF

    mosfet to ignition coil

    Abstract: 12v DC motor speed control using scr AN-7503 Ignition Transformer dc motor speed control using scr driver ge motors ac 110v DC motor speed control circuit with SCR thyristor family speed control of dc motor using scr
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary bt he pliion nctivodued ldect antors utho eyrds terrpoon, minctor, er ) OCI O frk ge- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer


    Original     		PDF

    800w class d circuit diagram schematics

    Abstract: SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 4V/800W 800w class d circuit diagram schematics SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram

    1000w subwoofer amplifier PCB layout

    Abstract: IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 4V/800W 1000w subwoofer amplifier PCB layout IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram

    FDMF6704

    Abstract: FDMF6704A FDMF6704V power loss Effio
    Text: www.fairchildsemi.com AN-9050 FDMF6704 Power Loss Calculation YoungSub Jeong Introduction The FDMF6704 DrMOS MCM Multi Chip Module product has HS and LS FETs and a gate driver all contained within a single module. The design has been optimized for Synchronous Buck applications. The switching and


    Original     		PDF AN-9050 FDMF6704 FDMF6704A FDMF6704V power loss Effio

    1000w audio amplifier circuit diagram class D

    Abstract: 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 7A/15A 1000w audio amplifier circuit diagram class D 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D

    Q1/2N3055 RCA

    Abstract: No abstract text available
    Text: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS


    Original     		PDF 1960s 20VTH. ALD110802 Q1/2N3055 RCA

    Untitled

    Abstract: No abstract text available
    Text: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGYC260R FSGYC260R

    Untitled

    Abstract: No abstract text available
    Text: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGYE033R FSGYE033R

    Untitled

    Abstract: No abstract text available
    Text: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power FETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL230R FSGL230R

    2E12

    Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
    Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL033R FSGL033R 2E12 FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4 Rad Hard in Fairchild for MOSFET
    Text: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGYC264R FSGYC264R 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET
    Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power FETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		PDF FSPYC164R, FSPYC164F FSPYC164F 1E14 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSPJ160D1 FSPJ160R3 Rad Hard in Fairchild for MOSFET
    Text: FSPJ160R, FSPJ160F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power FETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		PDF FSPJ160R, FSPJ160F FSPJ160F 2E12 FSPJ160D1 FSPJ160R3 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSPL230R, FSPL230F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power FETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		PDF FSPL230R, FSPL230F FSPL230F

    Untitled

    Abstract: No abstract text available
    Text: FSGJ063R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power FETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGJ063R FSGJ063R

    Untitled

    Abstract: No abstract text available
    Text: FSGS033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGS033R FSGS033R

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    5l 0380

    Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
    Text: 1999 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e se P -G hannel 2.5V s pe cified M O S FETs are produced using Fairchild S e m ic o n d u c to r's a d v a n c e d P ow erT ren ch p rocess th a t ha s been e s p e c ia lly ta ilo re d to m in im ize th e


    OCR Scan     		PDF FDR838P 43iR-RÃ 5l 0380 sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P