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    Untitled

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)


    Original     		GEX06971 GEX06630 OHF00328 OHF00329 OHF00330 OHF00441 PDF

    80 ESP 12

    Abstract: GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)


    Original     		fex06971 GEX06971 feo06652 GEX06630 OHF00328 OHF00329 OHF00330 OHF00441 80 ESP 12 GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61 PDF