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    FGB30N6S2T Price and Stock

    onsemi FGB30N6S2T

    IGBT 600V 45A TO-263
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    FGB30N6S2T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FGB30N6S2T Fairchild Semiconductor TRANS IGBT CHIP N-CH 600V 45A 3TO-263AB T/R Original PDF

    FGB30N6S2T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N6S2

    Abstract: FGB30N6S2 FGB30N6S2T FGH30N6S2 FGP30N6S2 FGP30N6S2D 1108a
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz 200kHZ 30N6S2 FGB30N6S2T FGP30N6S2D 1108a PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz PDF

    JESD22-A108

    Abstract: JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit
    Text: Date Created: 4/6/2004 Date Issued: 4/19/2004 PCN # 20041405 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL References FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. FGB20N6S2D FGB30N6S2 FGB30N6S2T FGH20N6S2 FGH30N6S2D FGH50N3 FGH60N6S2 FGP20N6S2D FGP40N6S2 JESD22-A108 JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit PDF