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    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Search Results

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEST88

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original     		PDF TPC8A01 Qg17nC TEST88

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original     		PDF TPC8A01 Qg17nC TPC8A01

    TPC8A01

    Abstract: MARKING 3AB
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •


    Original     		PDF TPC8A01 Qg17nC TPC8A01 MARKING 3AB

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •


    Original     		PDF TPC8A01 Qg17nC TPC8A01

    3SK231

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)


    Original     		PDF 3SK231 3SK231

    NEC k 1760

    Abstract: UAA 146 3SK230 UAA 2001
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB


    Original     		PDF 3SK230 SC-61) NEC k 1760 UAA 146 3SK230 UAA 2001

    3SK230

    Abstract: U1A marking
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB


    Original     		PDF 3SK230 SC-61) 3SK230 U1A marking

    3SK231

    Abstract: No abstract text available
    Text: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)


    Original     		PDF 3SK231 3SK231

    TPCP8401

    Abstract: No abstract text available
    Text: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSⅣ / N Channel U-MOSⅢ TPCP8401 2.9±0.1 0.3 +0.1／−0.05 0.025 M 8 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel 0.24＋0.10 −0.09


    Original     		PDF TPCP8401 TPCP8401

    2u55

    Abstract: 3SK134B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 ±10 *1 V Gate1 to Drain Voltage


    Original     		PDF 3SK134B SC-61) 2u55 3SK134B

    3SK135A

    Abstract: of 8404
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Suitable for use as RF amplifier in UHF TV tuner. 4 1 –0.06 0.16 +0.1


    Original     		PDF 3SK135A 3SK135A of 8404

    3SK131

    Abstract: 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage


    Original     		PDF 3SK131 3SK131 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508

    tpc8405

    Abstract: No abstract text available
    Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain-source ON resistance


    Original     		PDF TPC8405 tpc8405

    3SK131

    Abstract: P12449EJ2V0DS00
    Text: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage


    Original     		PDF 3SK131 3SK131 P12449EJ2V0DS00

    TPC8A01

    Abstract: MARKING J1A 4X25 pdii
    Text: T O S H IB A TPC8A01 01:TOSH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U—MOS DI 0 2:INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE( U - M O S M ) TENTATIVE TPC8A01 DC-DC CONVERTER NOTE BOOK PC PORTABLE MACHINES AND TOOLS


    OCR Scan     		PDF TPC8A01 TPC8A01 MARKING J1A 4X25 pdii

    3SK134B

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain Gps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK134B SC-61) 3SK134B

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK231 SC-61)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK231 SC-61)

    NEC 41-A 002

    Abstract: 8085 based traffic control system
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • in millimeters Suitable for use as RF amplifier in UHF TV tuner. • Low C rss


    OCR Scan     		PDF 3SK135A 20bots NEC 41-A 002 8085 based traffic control system

    3SK245

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G ps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK245 3SK245

    P10-58

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB


    OCR Scan     		PDF 3SK230 SC-61) P10-58

    TRANSISTOR D 2398

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS = 23.0 dB TYP. @ = 900 MHz • High Power Gain G Ps • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK134B TRANSISTOR D 2398

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G • Low Noise Figure NF = 2.4 dB TYP. @ = 900 MHz ps = 23.0 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK245

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .


    OCR Scan     		PDF 3SK131