TRW J500
Abstract: k45752 52S marking
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and
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uPD42S4260L
uPD424260L
16-BIT,
fiPD42S4260L,
424260L
PD42S4260L
44-pin
40-pin
/jPD42S4260L-A70,
424260L-A70
TRW J500
k45752
52S marking
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Untitled
Abstract: No abstract text available
Text: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
fiPD42S16160L,
4216160L,
42S18160L,
4218160L
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IR35-207-3
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿P D 4 2 S 1 7 8 0 5 , 4 2 1 7 8 0 5 16M -BIT DYNAM IC RAM 2 M -W ORD BY 8-BIT, EDO D e s c rip tio n The fiPD42S17805,4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17805
uPD4217805
PD42S17805
P042S17805,
28-pin
juPD42S17805-50
42S17805-60,
42S17805-70,
IR35-207-3
IR35-207-3
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TPS 436 IRA
Abstract: IC-3218B
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
iiPD42S16160Lr
4216160L,
42S18160L,
4218160L
TPS 436 IRA
IC-3218B
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NEC 4217400-60
Abstract: d4217400g3 nec 4216400 nec 4217400 D4217400G3-50-7JD D4217400G3-60-7JD
Text: DATA SHEET NEC / M O S INTEGRATED CIRCUIT _ /^P P 42 S 16400,4216400,42S17400,4217400 16 M -BIT D Y N A M IC R A M 4 M -W O R D B Y 4-BIT, FA ST P A G E M O D E Description The fiPD42S164Q0, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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42S17400
uPD42S164Q0
uPD4216400
uPD42S17400
uPD4217400
pPD42S16400,
26-pin
VP15-207-2
NEC 4217400-60
d4217400g3
nec 4216400
nec 4217400
D4217400G3-50-7JD
D4217400G3-60-7JD
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NEC 4216160
Abstract: No abstract text available
Text: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.
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16-BIT,
uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
42S18160
50-pin
42-pin
/tPD42S16160,
NEC 4216160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.
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HPD42S16160L,
4216160L,
42S18160L,
4218160L
16M-BIT
16-BIT,
fiPD42S16160L,
4218160L
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS I NC bHE J> fc>4E7525 DDaô'iaa NEC NEC Electronics inc. T45 *NECE fiPD42S64400, 42S65400 16,777,216 X 4-Bit Dynamic CMOS RAM Preliminary September 1993 Description The /iPD42S64400 and /L/PD42S65400 are 64M-bit dy namic RAMs organized as 16,777,216 words by 4 bits.
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4E7525
fiPD42S64400,
42S65400
/iPD42S64400
/L/PD42S65400
64M-bit
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
The/iPD42S17800,
PD42S17800
28-pin
/jPD42S
juPD42S17800-70
PD42S17800-80,
130su
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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16-BIT,
PD42S16165L,
4216165Lare
uPD42S16165L
4216165L
50-pin
42-pin
6165L-A
L427525
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT /1PD42S4800, 424800 4 M-BIT DYNAM IC RAM 512 K-WORD BY 8-BIT, FA ST PAGE M ODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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/1PD42S4800,
PD42S4800,
jiPD42S4800
28-pin
/IPD42S4800-60,
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Untitled
Abstract: No abstract text available
Text: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features
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fjPD421x160/L,
42S1x160/L
16-Bit
4218/42S18,
4217/42S17,
l/09-l/01e
fiPD421X160/L,
83RO-74748
St-37
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Untitled
Abstract: No abstract text available
Text: NEC 3CT 2 e 1992 NEC Electronics Inc. fiPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM Preliminary Information Description The ¿¿PD424190A/L and /JPD42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single pow er supply.
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fiPD424190A/L,
42S4190A/L
18-Bit
PD424190A/L
/JPD42S4190A/L
24190A
424190L
42S4190A
42S4190L
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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Untitled
Abstract: No abstract text available
Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features
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bM2752S
0034G34
42S16160
42S17160
42S18160
4217/42S17,
WD-747W
jjPD421
160/L,
160/L
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S4800L
Abstract: nec 424800 zx3A PD42S4800 tda 1006 D424800
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiP042S 4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800
uPD424800
iiP042S
fiPD42S4800
28-pin
PD42S4800-60,
jPD42S4800-7Q,
PD42S4800-80.
PD42S4800-10,
S4800L
nec 424800
zx3A
PD42S4800
tda 1006
D424800
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UPD4216805L
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT j u P D 42S 16805L , 4 2 1 6 8 0 5 L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D escription The //PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs w ith optional hyper page mode.
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uPD42S16805L
uPD4216805L
PD42S16805L,
4216805L
28-pin
//PD42S16805L-A60,
4216805L-A60
PD42S16805L-A70,
4216805L-A70
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NEC uPD 688
Abstract: UPD4217400LG3-A60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/PD42S16400L,
4216400L,
42S17400L,
4217400L
42S17400L
NEC uPD 688
UPD4217400LG3-A60
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d4217400
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
PD42S16400L,
4216400L,
42S17400L,
4217400L
42S17400L
d4217400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /JPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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16-BIT,
uPD42S16165L
uPD4216165L
PD42S16165L
iPD42S16165L,
4216165L
50-pin
42-pin
IR35-207-3
VP15-207-3
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PD42S4400
Abstract: NEC 424400-70 77ti NEC 424400 uPD424400 NEC 424400-60 424400-70
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jitP D 4 2 S 4 4 0 0 , 4 2 4 4 0 0 4M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D escription The |iPD42S4400. 424400 are 1,048,576 words by 4 bits C M O S dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4400
uPD424400
/PD42S4400
26-pin
/jPD42S4400-60,
MPD42S4400-70,
/PD424400-80
XPD424400-10
VP15-207-2
PD42S4400
NEC 424400-70
77ti
NEC 424400
NEC 424400-60
424400-70
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s2603
Abstract: 161NE
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / jtfP D 4 2 S 1 6 4 0 5 , 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escrip tio n The /iPD 42S 18405,4219406 are 4,104,304 words by 4 bits C M O S dynam ic R A M s with optional hyper page mode
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uPD42S18405
uPD4219406
iPD42S16405
PD42S16405,
26-pin
jiPD42S16405-50
/iPD42Scesses:
VP15-207-2
s2603
161NE
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PD4264805G5-A60-7JD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /iPD42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S64805
uPD4264805
uPD42S65805
uPD4265805
64M-BIT
/iPD42S64805,
42S65805,
//PD42S64805,
42S65805
32-pin
PD4264805G5-A60-7JD
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D42S17800-70
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800,
/IPD42S16800,
42S17800
28-pin
D42S17800-70
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