diode marking code fj
Abstract: marking 724 diode SOT23 MARKING code fj SOT23 code fj SB491D marking code TS
Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter
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Original
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SB491D
OT-23
diode marking code fj
marking 724 diode
SOT23 MARKING code fj
SOT23 code fj
SB491D
marking code TS
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PDF
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marking 724 diode
Abstract: SOT23 code fj marking code fj sot-23 marking code IR
Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter
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Original
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SB491D
OT-23
marking 724 diode
SOT23 code fj
marking code fj
sot-23 marking code IR
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PDF
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pt1017
Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253
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Original
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El00-KIT-ND
J200-KIT-ND
1600-KIT-ND
1601-KIT-ND
1602-KIT-ND
1603-KIT-ND
1604-KIT-ND
923000-I-ND
10514-ND
10522-ND
pt1017
mt 1389 vde
converter siemens modules GR 60 48V 120 A
SMD Code 12W SOT-23
600w 12V 230V Inverter schematic
mw 137 600g
PT1000 NTC TEMPERATURE CHART
smd 4pk
EPL1902S2C
67127490
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PDF
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Untitled
Abstract: No abstract text available
Text: AH1801 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • • Micropower operation Operation with North or South Pole 2.5V to 5.5V battery operation Inverted Output-on without Magnet present
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Original
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AH1801
DFN2020-3,
DFN2020-6
DFN2020-3
DFN2020-6
DFN2020-6:
AH1801
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PDF
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SC-59
Abstract: KB SOT23 sc59 AH1801 AH1801-FJ AH1801-SN AH1801-W DFN2020-3 DFN2020-6 SOT23 MARKING code fj
Text: AH1801 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • • Micropower operation Operation with North or South Pole 2.5V to 5.5V battery operation Inverted Output-on without Magnet present
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Original
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AH1801
DFN2020-3,
DFN2020-6
DFN2020-3
DFN2020-6
DFN2020-6:
AH1801
SC-59
KB SOT23
sc59
AH1801-FJ
AH1801-SN
AH1801-W
SOT23 MARKING code fj
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PDF
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transistors BFW16A
Abstract: BF763 BF547W BF547 bfw16a
Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Wideband transistors RF & MICROWAVE SEMICONDUCTORS & MODULES FIRST-GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.S GHz fj/lc c u r v e _ package see chart
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OCR Scan
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OT143
BF689K
BF763
BFT25
BF747
BF547
BFS17
BFS17A
BFR53
BFQ17
transistors BFW16A
BF547W
bfw16a
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PDF
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MPS6544
Abstract: MPS6516 MPS-6544 MPS6512 MPS6513 MPS6515 MPS6519 2N4125 MPS6514 MPS6517
Text: MOTOROLA SC 6367254 -C XS TR S /R MOTOROLA SC J> F |fc .3 b 7 2 S M QDfllflll "i FJ 96D 8 1 8 11 XSTRS/R F 1 ' MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 V ceo Collector-Base Voltage
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OCR Scan
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-p-21-21
MPS6512,
MPS6513
MPS6514,
MPS6515
MPS6516
MPS6518
MPS6519
MPS6512
MPS6544
MPS-6544
2N4125
MPS6514
MPS6517
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case PNP m iniR eel 4" O rder / " “ X N um ber ' Type 500 pcs. ^ PN P G eneral Purpose BC808-16 73-8081 BC808-25 73-8082 BC808-40 73-8083 m iniBag O rder N um ber 1 00 pcs. R a tin g s i*FE M in -M ax @ Ic VCE Part fj (M Hz) M arking
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OCR Scan
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BC808-16
BC808-25
BC808-40
500mA
100mA
100MHz
BC858A
BC858B
BC858C
100mA
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PDF
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BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
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OCR Scan
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fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
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PDF
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d 417 transistor
Abstract: 417 TRANSISTOR 2N6426 MMBTA05 MMBTA06 MMBTA13 MMBTA14 MMBTA20 MMBTA42 MMBTA43
Text: MOTOROLA 6 3 6 7 2- 5 4 BE^b3b72SH SC -CXSTRS/R FJ MOTOROLA SC 96D C X S T R S !/ R F OOflSOSt 82056 M A X IM U M R A TIN G S r Rating Sym bol MMBTA05 MMBTA06 U nit Collector-Em itter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage
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OCR Scan
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MMBTA05
MMBTA06
b3b72S4
00fl20Sti
MMBTA06
OT-23
O-236AA/AB)
MMBTA55
MMBTA56
d 417 transistor
417 TRANSISTOR
2N6426
MMBTA13
MMBTA14
MMBTA20
MMBTA42
MMBTA43
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA 6367254 "Üä SC Í X S T R S / R FJ M OT O RO L A SC CXSTRS/R M A XIM U M RATINGS »F|t:3t,7ES4 ODflSDMô S J"~ F 96D 8 2 0 4 8 1 T'Z9'/5 Value Sym bol M M BT5088 M M BT5089 Unit Collector-Emitter V oltage v CEO 30 25 V dc Collector-Base V oltage
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OCR Scan
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BT5088
BT5089
MMBT5088
MMBT5089
OT-23
O-236AA/AB)
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PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SC Í X S T R S / R FJ 6 3 6 7 2 54 M OT O R O L A M a x im u m SC Tb XSTRS/R D eT| b3t,7aSM DDflaDS3 960 82 053 F T-29’G. r a t in g s Sym bol Value Unit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage Vc b o 350 Vdc Vdc Rating
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OCR Scan
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MMBT6517
OT-23
O-236AA/AB)
2N6517
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PDF
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bc850
Abstract: No abstract text available
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 BC850 V CES max. 30 50 v CEO max. 30 45 C o lle ctor cu rre n t peak value 'CM max. 200 200 T ota l power dissipation up to T am fj = 25 °C
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OCR Scan
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BC849
BC850
BC850
BC849B
BC850B
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PDF
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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OCR Scan
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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PDF
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2N3905 MOTOROLA
Abstract: No abstract text available
Text: MOTORO LA SC ÍXSTRS/R FJ 6367254 MOTOROLA SC Tb »F|t,3h75SM GOflEDm E <X S T R S ¿ R „ F ? 96D M A X I M U M R A T IN G S Sym bol V a lu e U n it Colle ctor-E m itte r V oltag e B a tin g V C EO 40 Vdc Co lle ctor-B ase V oltag e v CBO 40 Vdc Em itter-B ase V olta g e
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OCR Scan
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3h75SM
MMBT3906
OT-23
O-236AA/AB)
2N3905 MOTOROLA
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PDF
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MMBC1321Q4
Abstract: No abstract text available
Text: motorola I SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE I b3b7SSS 003027^ 5 D IODES/OPTO 34C 38279 D SOT23 (continued) DEVICE NO. MMBC1321Q2 MMBC1321Q5 thru SMALL-SIGNAL NPN TRANSISTORS TOP VIEW C ["""I • Designed for VHF/RF Amplifier, low-noise, high-gain
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OCR Scan
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MMBC1321Q2
MMBC1321Q5
MMBC1321Q3
MMBC1321Q4
MMBC1321Q5
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PDF
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BCX19R
Abstract: No abstract text available
Text: BCX19 BCX20 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTM ARKING DETAILS - CO M PLEM ENTARY TYPES BCX19 - U1 BCX20 - U2 BC X19R • U4 BCX2QR- U5 BCX19 - BCX20 BCX17 BCX18 ABSOLUTE M AXIM UM RATINGS. PARAMETER >M 8 0 L BCX19
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OCR Scan
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BCX19
BCX20
BCX17
BCX18
BCX20
BCX19R
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996_ PARTMARKING D E T A ILS - 3B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V VALUE UNIT cbo 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage
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OCR Scan
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lc-10mA,
100MHz
60MHz,
200MHz
Width-300ns.
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PDF
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Untitled
Abstract: No abstract text available
Text: FM M T5209 FM M T5210 SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTO RS RARTMARKING DETAILS: FM M T5209 - 2Q FM M T 5210 - 2R ABSOLUTE M AXIM UM RATINGS SY M B O L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
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OCR Scan
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T5209
T5210
T5209
FMMT5209
FMMT5210
100/iA,
500/iA,
15kHz
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PDF
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11105 IC
Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Text: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code
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OCR Scan
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BFS17
OT-23)
Q62702-F337
11105 IC
npn transistor w5
BFS17
ic 11105 circuits voltage
Transistor code 1z
bfs17 mark
SOT23 code fj
transistor 313 sot23
transistor x 313
RF TRANSISTOR SOT23 5
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PDF
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Untitled
Abstract: No abstract text available
Text: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and
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OCR Scan
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bb53T31
BFR92
BFT92.
bbS3131
00B5157
bS3T31
-------------BFR92
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PDF
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sap16
Abstract: CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32
Text: INTEGRATED CIRCUITS h m m m TDA9850 l2C-bus controlled BTSC stereo/SAP decoder Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711Dfl2b o t n o b c n 1995 Jun 19 PHILIPS b3b Philips Semiconductors Preliminary specification
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OCR Scan
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TDA9850
711Dfl2b
7110AE
sap16
CSB503F5
A2x smd
sap15
SAP6
SAP12
SMU FM IC
TDA9850T
CSB503F58
SDIP32
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PDF
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Untitled
Abstract: No abstract text available
Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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OCR Scan
|
BFT93
BFR93
BFR93A.
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PDF
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313 Motorola
Abstract: 25CC 2N5086 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C
Text: MOTOROLA SC -CXSTRS/R F> 6 3 6 7 2 54 MOTOROLA SC Tb XSTRS/R M A X IM U M RATINGS D eT| b3L.72S4 ODÖITM? 1 F 96D 8 1 9 4 7 ^ D _ * Symbol Value Unit Coilector-Emitter Voltage VCEO 32 V Collector-Base Voltage V cB O 32 V Ve b o 5.0 V ic 100 mAdc Symbol Max
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OCR Scan
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62Adc,
BCW61A,
BCW61B,
BCW61C,
BCW61D
b3b72SM
313 Motorola
25CC
2N5086
BCW60A
BCW60B
BCW60C
BCW60D
BCW61A
BCW61B
BCW61C
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PDF
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