Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK25V4045 1 4 .0 — 14.5G H z BAND 0 .3 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 2 5 V 4 0 4 5 is an in te rn a lly im pedance m atched GaA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5
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MGFK25V4045
FK25V4045
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K25V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 25V 4045 1 4 .0 —14.5GHz BAND •3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 2 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5
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FK25V4045
K25V4045
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MGFK25V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK25V404514.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET DESCRIPTION The FK25V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK25V4045
MGFK25V4045
150mA
150mA,
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14.5ghz
Abstract: GaAs FET chip MGFK25V4045
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 25V 4045 1 4 .0 ~ 1 4 .5 G H z BAND 0 .3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 2 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed m etal-ceramic
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MGFK25V4045
MGFK25V4045
36dBm
150mA
30GHz
31GHz
14.5ghz
GaAs FET chip
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