MGFK30V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The FK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
OCR Scan
|
MGFK30V4045
MGFK30V4045
350mA,
350mA
30GHz
31GHz
|
PDF
|
4045 FET
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G U n it: m illim e te rs linches The FK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5
|
OCR Scan
|
MGFK30V4045
FK30V4045
4045 FET
|
PDF
|
K30V
Abstract: 145g K30V4045 P1D8
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G aA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5
|
OCR Scan
|
FK30V4045
K30V
145g
K30V4045
P1D8
|
PDF
|