vishay rf output power transistor
Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
|
Original
|
T1G4003532-FL
T1G4003532-FL
vishay rf output power transistor
tRANSISTOR 2.7 3.1 3.5 GHZ cw
"RF Power Transistor"
35W amplifiers
600S100
|
PDF
|
ATC600S3R0
Abstract: ATC600S0R3 ATC600S0R2 37C0064
Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
|
Original
|
T1G6003028-FL
T1G6003028-FL
ATC600S3R0
ATC600S0R3
ATC600S0R2
37C0064
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
|
Original
|
T1G6003028-FL
T1G6003028-FL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1
|
Original
|
T1G6003028-FL
T1G6003028-FL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output fL-fU Min. Flatness Max. Note B C O N N E C T I O N 2000-8000 30 ±2.0 +30I +20 4 +40 2:1 2:1 12 1.2 BN333 — 1095.00 2-500 10-1000 10-1000
|
Original
|
ZHL-42
BN333
10cept
ZHL-03-5WF,
ZHL-2-12
ZHL-32A
ZHL-42
ZHL-1042J
ZHL-2010
ZHL-4240
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output fL-fU Min. Flatness Max. Note B C O N N E C T I O N 2000-8000 30 ±2.0 +30I +20 4 +40 2:1 2:1 12 1.2 BN333 — 1095.00 2-500 10-1000 10-1000
|
Original
|
ZHL-42
ZHL-211
ZHL-2-12
ZHL-32A
ZHL-42
ZHL-4240
ZHL-42W
ZHL-4240W
ZHL-03-5WF,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output fL-fU Min. Flatness Max. Note B C O N N E C T I O N 2000-8000 30 ±2.0 +30I +20 4 +40 2:1 2:1 12 1.2 BN333 — 1095.00 2-500 10-1000 10-1000
|
Original
|
ZHL-42
ZHL-211
ZHL-2-12
ZHL-32A
ZHL-42
ZHL-4240
ZHL-42W
ZHL-4240W
ZHL-03-5WF,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output fL-fU Min. Flatness Max. Note B C O N N E C T I O N 2000-8000 30 ±2.0 +30I +20 4 +40 2:1 2:1 12 1.2 BN333 — 1095.00 2-500 10-1000 10-1000
|
Original
|
ZHL-42
ZHL-211
ZHL-2-12
ZHL-32A
ZHL-42
ZHL-4240
ZHL-42W
ZHL-4240W
ZHL-03-5WF,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output FREQ. (MHz) MODEL NO. D ZVE-8G ZHL-1A ZHL-2 ZHL-2-8 ZHL-211 ▲ ZHL-2-12 ZHL-3A ZHL-32A ZHL-42 ZHL-4240 ZHL-42W ZHL-4240W GAIN (dB) fL-f U
|
Original
|
ZHL-42
ZHL-211
ZHL-2-12
ZHL-32A
ZHL-42
ZHL-4240
ZHL-42W
ZHL-4240W
ZHL-03-5WF,
|
PDF
|
1150-L
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output FREQ. (MHz) MODEL NO. D ZVE-8G ZHL-1A ZHL-2 ZHL-2-8 ZHL-211 ▲ ZHL-2-12 ZHL-3A ZHL-32A ZHL-42 ZHL-4240 ZHL-42W ZHL-4240W GAIN (dB) fL-f U
|
Original
|
ZHL-42
ZHL-211
ZHL-2-12
ZHL-32A
ZHL-42
ZHL-4240
ZHL-42W
ZHL-4240W
ZHL-03-5WF
1150-L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Coaxial MEDIUM HIGH POWER 50 kHz to 8 GHz D ZVE ZHL-case S32 ZHL-case T34 ZHL-42 up to 1W +30 dBm output FREQ. (MHz) MODEL NO. D ZVE-8G ZHL-1A ZHL-2 ZHL-2-8 ZHL-211 ▲ ZHL-2-12 ZHL-3A ZHL-32A ZHL-42 ZHL-4240 ZHL-42W ZHL-4240W GAIN (dB) fL-f U
|
Original
|
ZHL-42
ZHL-211
ZHL-2-12
ZHL-32A
ZHL-4240
ZHL-42W
ZHL-4240W
BN333
ZHL-03-5WF
|
PDF
|
temex vco
Abstract: No abstract text available
Text: FREQUENCY VCO 1085 - 1115 MHz Voltage Controlled Oscillator – VLB 1085 - RF Specification rev-W0 Electrical Specifications Mechanical Parameters Marking Preliminary F re qu en c y VCO 1095 - 1115 MHz Voltage Controlled Oscillator – VLB 1085 - RF December 14th, 2004
|
Original
|
VLB1085
temex vco
|
PDF
|
LD33
Abstract: JESD22 METHOD JA-104 aluminum electrolytic capacitor JESD22 Method JA-104 1.5 uf gk 078 vb Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
Text: Surface Mount Multilayer Ceramic Capacitors Automotive Grade Ceramic Automotive One world. One KEMET. Multilayer Ceramic Capacitors Automotive Grade Table of Contents Page Why Choose KEMET. 3
|
Original
|
15bis
LD33
JESD22 METHOD JA-104 aluminum electrolytic capacitor
JESD22 Method JA-104
1.5 uf
gk 078 vb
Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
|
PDF
|
ZHL-42W
Abstract: ZHL-42
Text: Coaxial Amplifier 50Ω ZHL-42W Medium High Power 10 to 4200 MHz Features • wideband, 10 to 4200 MHz • high IP3, +38 dBm typ • high gain, 30 dB min. CASE STYLE: U36 Connectors Model Price Qty. SMA ZHL-42W $1095.00 ea. 1-9 Applications • communication systems
|
Original
|
ZHL-42W
ZHL-42W
ZHL-42
|
PDF
|
|
|
GFm DIODE
Abstract: No abstract text available
Text: POWEREX m u 1SE D INC m s • 72=i4b21 0003431 fl K Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 CD4B 40 CD4C 40 SCR/Diode POW-R-BLOK Modules
|
OCR Scan
|
i4b21
BP107,
Amperes/1200-1600
AX/10
MAX/10
GFm DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 100301 Low Power Triple 5-Input OR/NOR Gate General Description Features The 100301 is a monolithic triple 5-input OR/NOR gate. All inputs have 50 k fl pull-down resistors and all outputs are buffered. • ■ ■ ■ 23% power reduction of the 100101 2000V ESD protection
|
OCR Scan
|
MIL-STD-883
TL/F/10579-1
28-Pin
24-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: July 1992 100307 Low Pow er Q uint Exclusive O R /N O R G ate General Description Features The 100307 is monolithic quint exclusive-OR/NOR gate. The Function output is the wire-OR of all five exclusive-OR outputs. All inputs have 50 k fl pull-down resistors.
|
OCR Scan
|
MIL-STD-883
|
PDF
|
Untitled
Abstract: No abstract text available
Text: April 1993 100302 Low Power Quint 2-Input OR/NOR Gate General Description Features The 100302 is a monolithic quint 2-input OR/NOR gate with common enable. All inputs have 50 k fl pull-down resistors and all outputs are buffered. • ■ ■ ■ 43% power reduction of the 100102
|
OCR Scan
|
MIL-STD-883
|
PDF
|
LT20FI
Abstract: TRANSISTOR BC 2078 LT2C LT207
Text: rrw m _ LT2078/LT2079 TECHNOLOGY M icropow er, D ual a n d Q u a d , Single Supply, Precision O p Am ps K O T U f K S D C S C R IP T IO fl • SO Package with Standard Pinout ■ Supply Current per Amplifier: 50fiA Max ■ Offset Voltage: 70fiV Max
|
OCR Scan
|
LT2078/LT2079
50fiA
70fiV
250pA
200kHz
LT2011/LT1212
LT1490/LT1491
14MHz,
LT1178/LT1179
200kHz
LT20FI
TRANSISTOR BC 2078
LT2C
LT207
|
PDF
|
D668N
Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
Text: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO
|
OCR Scan
|
tA-45
BYY57/
BYY58/
20x20
100x125
D24NR
41/mln.
D668N
D798N400
d629n
D4409
Leistungsdiode
d452
BYY 56
D4409N
D668N2000
D668
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R E G jH L . BNC Female Bulkhead Receptacles ELECTRONICS,INC. BNC 1094 UG-1094/U On left BNC 1095 Isolated ground bulkhead receptacle ELECTRICAL: MATERIAL: • • • • • • • • Im p e d a n ce : 50 ohm C o n ta c t re sista n c e : 15 m illio h m s m a xim u m
|
OCR Scan
|
UG-1094/U
|
PDF
|
STR 6765
Abstract: kona 132 ir58 a1876 elmwood 3100 CA92123 Viking Tech Corporation b2800 CZ-186-00
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.S.A. Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL : 408-954-7000 FAX : 408-954-7883 300 Park Boulevard, Suite #210 Itasca, IL 60143-2636 TEL: 630-775-1050 FAX : 630-775-1058 238 Littleton Rd. Suite 201
|
OCR Scan
|
S8534-5
STR 6765
kona 132
ir58
a1876
elmwood 3100
CA92123
Viking Tech Corporation
b2800
CZ-186-00
|
PDF
|
TTK SG 2368
Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A
|
OCR Scan
|
AP-55A
PR00UCT.
MCS-48
/TP-11/1179/5K
TTK SG 2368
BV EI 303 3628
7 segment LD 1106 BS
LM 6863 D
I8253
yx 8018 0308
082c ez 422
BV EI 304 3083
0429 01 2701 00 RELE
12,8 mhz e 4895 lf
|
PDF
|
utah g 12 r
Abstract: No abstract text available
Text: □IXYS A labam a A ll A m erican H untsville, AL 205-837-1555 Future Electronics H untsville, AL 205-830-2322 Nu H orizons H untsville. AL 205-722-9330 A rizona A ll A m erican Phoenix, AZ 602-966-0006 Future E lectronics Phoenix, AZ 602-968-7140 C alifornia N orth
|
OCR Scan
|
|
PDF
|
