FLASH Search Results

FLASH Result Highlights (5)

Part	Manufacturer	Description
MD28F010-20/B	Rochester Electronics LLC	Flash
MD28F020-90	Rochester Electronics LLC	Flash, 256KX8, 90ns, CDIP32, CERDIP-32
AM188EM-25KC\\W	Rochester Electronics	AM188EM - Microcontroller, 16-Bit, FLASH
AM188EM-40KC\\W	Rochester Electronics	AM188EM - Microcontroller, 16-Bit, FLASH
AM188EM-33KC\\W	Rochester Electronics	AM188EM - Microcontroller, 16-Bit, FLASH

FLASH Price and Stock

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Microchip Technology Inc FLASHPRO4 PROGRAMMER FLASH FPGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FLASHPRO4	Bulk	777		1	1 $112 10 $112 100 $112 1000 $112 10000 $112	Buy Now
Mouser Electronics	FLASHPRO4		151			1 $109.8 10 $109.8 100 $109.8 1000 $109.8 10000 $109.8	Buy Now
Newark	FLASHPRO4	Bulk	451		1	1 $114.19 10 $114.19 100 $114.19 1000 $114.19 10000 $114.19	Buy Now
Microchip Technology Inc	FLASHPRO4		5,793	12 Weeks		1 $109.8 10 $109.8 100 $109.8 1000 $109.8 10000 $109.8	Buy Now
TME	FLASHPRO4				1	1 $105 10 $105 100 $105 1000 $105 10000 $105	Get Quote

NAC	FLASHPRO4	Box	15		1	1 $133.33 10 $133.33 100 $122.8 1000 $113.82 10000 $113.82	Buy Now
Master Electronics	FLASHPRO4		48			1 $108.82 10 $108.82 100 $108.82 1000 $108.82 10000 $108.82	Buy Now
New Advantage Corporation	FLASHPRO4		18		1	1 $161.66 10 $161.66 100 $150.88 1000 $150.88 10000 $150.88	Buy Now
Microchip Technology Inc FLASHPRO5 HARDWARE PROGRAMMER SOC/FPGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FLASHPRO5	Bulk	215		1	1 $101.62 10 $101.62 100 $101.62 1000 $101.62 10000 $101.62	Buy Now
Avnet Americas	FLASHPRO5	Bulk	8		1	1 $115.58832 10 $113.04835 100 $105.42697 1000 $105.42697 10000 $105.42697	Buy Now
Newark	FLASHPRO5	Bulk	59		1	1 $103.6 10 $103.6 100 $103.6 1000 $103.6 10000 $103.6	Buy Now
Microchip Technology Inc	FLASHPRO5		998	12 Weeks		1 $99.62 10 $99.62 100 $99.62 1000 $99.62 10000 $99.62	Buy Now
NAC	FLASHPRO5	Box	105		1	1 $120.97 10 $120.97 100 $111.42 1000 $103.27 10000 $103.27	Buy Now

Avnet Silica	FLASHPRO5			7 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FLASHPRO5		2	5 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	FLASHPRO5		2		1	1 $453.98 10 $420.1 100 $420.1 1000 $420.1 10000 $420.1	Buy Now
AES-USA CORPORATION LEDFLASHER1 Flasher Unit, LED, solid-state,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LEDFLASHER1		100			1 - 10 - 100 - 1000 - 10000 -	Buy Now
AES-USA CORPORATION LEDFLASHER1W Flasher Unit, LED, solid-state
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LEDFLASHER1W		100			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc FLASHPRO6 HARDWARE PROGRAMMER SOC/FPGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FLASHPRO6	Bulk	71		1	1 $266.99 10 $266.99 100 $266.99 1000 $266.99 10000 $266.99	Buy Now
Avnet Americas	FLASHPRO6	Bulk			1	1 $303.69916 10 $55.83164 100 $277.00104 1000 $277.00104 10000 $277.00104	Buy Now
Mouser Electronics	FLASHPRO6		115			1 $261.75 10 $261.75 100 $261.75 1000 $261.75 10000 $261.75	Buy Now
Microchip Technology Inc	FLASHPRO6		1,554	12 Weeks		1 $261.75 10 $261.75 100 $261.75 1000 $261.75 10000 $261.75	Buy Now
TME	FLASHPRO6				1	1 $265 10 $265 100 $265 1000 $265 10000 $265	Get Quote

NAC	FLASHPRO6				1	1 $317.84 10 $317.84 100 $292.75 1000 $271.33 10000 $271.33	Buy Now
Avnet Silica	FLASHPRO6			10 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FLASHPRO6			13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	FLASHPRO6		8			1 $256.62 10 $256.62 100 $256.62 1000 $256.62 10000 $256.62	Buy Now
New Advantage Corporation	FLASHPRO6		8		1	1 $344.06 10 $321.12 100 $321.12 1000 $321.12 10000 $321.12	Buy Now

Find more FLASH price and stock on Findchips.com

FLASH Datasheets (77)

Part	Manufacturer	Description	Datasheet Type	PDF
FLASH	Hitachi Semiconductor	FLASH Development Toolkit	Original	PDF
FLASH370	Cypress Semiconductor	UltraLogic High-Density Flash CPLDs	Original	PDF
FLASH370	Cypress Semiconductor	Implementing a 128K x 32 Dual-Port RAM Using the FLASH370	Original	PDF
FLASH370i	Cypress Semiconductor	An Introduction to In System Reprogramming with FLASH370i	Original	PDF
FLASH370i	Cypress Semiconductor	Power Consumption Estimation for FLASH370i	Original	PDF
FLASH370I	Cypress Semiconductor	The FLASH370i Family Of CPLDs and Designing with Warp2	Original	PDF
FLASH370i ISR	Cypress Semiconductor	UltraLogic High-Density Flash CPLDs	Original	PDF
FLASH371i-CQFP44	Cypress Semiconductor	CPLD Family	Original	PDF
FLASH371i-LCC44	Cypress Semiconductor	CPLD Family	Original	PDF
FLASH371i-PLCC44	Cypress Semiconductor	CPLD Family	Original	PDF
FLASH371i-TQFP44	Cypress Semiconductor	CPLD Family	Original	PDF
FLASH371-LCC44	Cypress Semiconductor	UltraLogic High-Density Flash CPLD	Original	PDF
FLASH371-PGA44	Cypress Semiconductor	UltraLogic High-Density Flash CPLD	Original	PDF
FLASH371-PLCC44	Cypress Semiconductor	UltraLogic High-Density Flash CPLD	Original	PDF

FLASH371-TQFP44	Cypress Semiconductor	UltraLogic High-Density Flash CPLD	Original	PDF
FLASH372i-PGA44	Cypress Semiconductor	CPLD Family	Original	PDF
FLASH372-PLCC44	Cypress Semiconductor	UltraLogic High-Density Flash CPLD	Original	PDF
FLASH372-TQFP44	Cypress Semiconductor	UltraLogic High-Density Flash CPLD	Original	PDF
FLASH373i-CQFP100	Cypress Semiconductor	CPLD Family	Original	PDF
FLASH373i-CQFP84	Cypress Semiconductor	CPLD Family	Original	PDF

FLASH Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TLC0820AC, TLC0820AI Advanced LinCMOS HIGH-SPEED 8-BIT ANALOG-TO-DIGITAL CONVERTERS USING MODIFIED FLASH TECHNIQUES SLAS064A – SEPTEMBER 1986 – REVISED JUNE 1994 D D D D D D D D Advanced LinCMOS Silicon-Gate Technology 8-Bit Resolution Differential Reference Inputs	Original	TLC0820AC, TLC0820AI SLAS064A TLC0820A ADC0820C/CC AD7820K/B/T TLC0820ACDBR TLC0820ACDW TLC0820ACDWR TLC0820ACFN	PDF
Untitled Abstract: No abstract text available Text: CRF02 TOSHIBA Fast Recovery Diode Silicon Diffused Type CRF02 Power Supply Applications Strobo Flasher Applications Unit: mm • Repetitive peak reverse voltage: VRRM = 800 V • Average forward current: IF AV = 0.5 A • Low forward voltage: VFM = 3.0 V (max.)	Original	CRF02	PDF
tr8c Abstract: TMS28F200 Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture	OCR Scan	TMS28F20 TMS28F200BZB 8-BIT/131072 16-BIT 96K-Byte 128K-Byte 16K-Byte 28F200B2x70 28F200BZX80 28F200BZX90 tr8c TMS28F200	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)	OCR Scan	2SC3420	PDF
Untitled Abstract: No abstract text available Text: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage	OCR Scan	2SA1893 --35V, --10mA,	PDF
NCC equivalent Abstract: No abstract text available Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors	OCR Scan	TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent	PDF
th50vsf1400 Abstract: BA30 Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory	OCR Scan	50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •	OCR Scan	GT2QG102 GT20G102 2-10S2C	PDF
Untitled Abstract: No abstract text available Text: T o s h i b a o i s c r e t e /o p t o } 9097250 T O S H IB A Sb DE^jj TOT72SD □DD7Slh 1 D IS C R E T E /O P T O > 33 - o 7 2SC2270 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS, Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. 7.9MAX.	OCR Scan	OT72SD 2SC2270	PDF
cd018 Abstract: No abstract text available Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS \|w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C	OCR Scan	JS633 TMS28F033 4194304-BIT 80-PIN 16/32-bit cd018	PDF
s29f Abstract: No abstract text available Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '	OCR Scan	TMS29F040 4194304-BIT 29LF040/ 29VF040 ComJS820A R-PDSO-G32) s29f	PDF
Untitled Abstract: No abstract text available Text: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)	OCR Scan	2SC3072 T11RAT10	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage	OCR Scan	2SC3671 Q55-Q0S 10tnA,	PDF
Untitled Abstract: No abstract text available Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte	OCR Scan	TMS28F040 304-BIT SMJS040-DECEMBER A0-A18 32-pin 40-pin	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive	OCR Scan	GT20G102	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA GT10G101 T O SH IB A IN SU LA T E D GATE BIPO LA R T R A N SIST O R SILICO N N -C H A N N E L IGBT G T 1 0 G 1 01 Unit in mm STRO BE FLASH A P PL IC A T IO N S • • • • High Input Impedance Low Saturation Voltage : VcE sat = 8V (Max.) (Iq = 130A)	OCR Scan	GT10G101	PDF
programmable storage device Abstract: No abstract text available Text: TMS29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE SMJS816B-NOVEMBER1990-REVISED JANUARY 1993 FM PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE'“ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible * Organization . . . 2048 x 8-Bit Flash Memory	OCR Scan	TMS29F816 384-BIT SMJS816B-NOVEMBER1990-REVISED 29F816-06 1024-Byte programmable storage device	PDF
Untitled Abstract: No abstract text available Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040	OCR Scan	SMJS820B TMS29F040 29LF040/ 29VF040 SMJS825) A18A17	PDF
Untitled Abstract: No abstract text available Text: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode	OCR Scan	GT25G102 2-10S2C GT25G1Q2	PDF
5G103 Abstract: No abstract text available Text: TOSHIBA TENTATIVE GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 5 G 103 U nit in mm STROBE FLASH APPLICATIONS • • • • • 3rd Generation H igh Input Impedance Low Saturation Voltage ; V cE sat =8 V (M ax-) dC = 130A)	OCR Scan	GT5G103 5G103	PDF
28F512A Abstract: 28F512A-12 Text: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12	OCR Scan	SMJS514C-FEBRUARY TMS28F512A 28F512A-10 100ns 28F512A-12 120ns 28F512A-15 150ns 28F512A-17 170ns 28F512A	PDF
ba qu Abstract: TC58F401 Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION	OCR Scan	TC58F400F TC58F401F BITS/262 TC58F400/401 TC58F4 TC58F400) 00000h 01FFFh 02000h ba qu TC58F401	PDF
GT8G101 Abstract: 072G Text: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate \|fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)	OCR Scan	GT8G101 100ns GT8G101 072G	PDF
2SA1792 Abstract: No abstract text available Text: 2SA1792 SILICON PNP EPITAXIAL TYPE U nit in mm STOROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • • 7.2MAX 3.0 £3: Excellent hjrE Linearity : hpE = 100~320 Vç e = —2V, I q = - 1A Low Saturation Voltage : V çE(sat)= —0.5V (Max.) at I q = —8A	OCR Scan	2SA1792 2SA1792	PDF

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FLASH Search Results

FLASH Result Highlights (5)

FLASH Price and Stock

Microchip Technology Inc FLASHPRO4

Microchip Technology Inc FLASHPRO5

AES-USA CORPORATION LEDFLASHER1

AES-USA CORPORATION LEDFLASHER1W

Microchip Technology Inc FLASHPRO6

FLASH Datasheets (77)

FLASH Datasheets Context Search

Untitled

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tr8c

Untitled

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NCC equivalent

th50vsf1400

Untitled

Untitled

cd018

s29f

Untitled

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programmable storage device

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5G103

28F512A

ba qu

GT8G101

2SA1792