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    FLASH MEMORY 5V 16M-BIT 48 TSOP Search Results

    FLASH MEMORY 5V 16M-BIT 48 TSOP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy

    FLASH MEMORY 5V 16M-BIT 48 TSOP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    IC1210-m128LQ

    Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
    Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are


    Original     		PDF

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    28F640J5a

    Abstract: iMC016FLSG 28F160B3 IMC016FLSC 9021b iMC008FLSC flash memory 5v 16m SmartDie 28F016B3 28F160F3
    Text: Flash Memory Quick Reference Guide ion 4 Vers ’98 June Flash Memory Components for New Designs New designs should be based on Intel’s “components for new designs” shown in bold text in this guide. For information on our full product line, including extended temperature products, contact your Intel Sales representative/distributor or refer to our linecard available on Intel’s Web site.


    Original     		PDF 28F320C3a 28F032C3a 28F320LSA USA/698/10K/MS 28F640J5a iMC016FLSG 28F160B3 IMC016FLSC 9021b iMC008FLSC flash memory 5v 16m SmartDie 28F016B3 28F160F3

    electronique package

    Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
    Text: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu


    Original     		PDF D-85737 S-19268 FEDE-FLASH-0998 electronique package electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit

    PLCC 44 intel package dimensions

    Abstract: SmartDie 28F008B3 28F008C3 28F016B3 28F032B3 28F032C3 28F160B3 28F160F3 28F320B3
    Text: Flash Memory Quick Reference Guide ion 6 Vers ’99 Jan. Intel package lineup Intel Package Lineup • Software Builder–Application software for Intel Flash memory products. • Online Utilities–Understand how Intel® Flash memory products will perform in your application in regards to cycling time/duration and power


    Original     		PDF USA/0199/10K/MS PLCC 44 intel package dimensions SmartDie 28F008B3 28F008C3 28F016B3 28F032B3 28F032C3 28F160B3 28F160F3 28F320B3

    SmartDie

    Abstract: 28F008B3 28F016B3 28F032B3 28F032C3 28F160B3 28F160F3 28F320B3 28F400B3 28F800B3
    Text: Flash Memory Quick Reference Guide ion 5 Vers ’98 Aug. Intel package lineup Intel Package Lineup Refer to Intel’s World Wide Web Site for Additional Flash Information Development Tools/Electronic Tools Catalog http://developer.intel.com/design/flash/swtools/


    Original     		PDF USA/0898/15K/MS SmartDie 28F008B3 28F016B3 28F032B3 28F032C3 28F160B3 28F160F3 28F320B3 28F400B3 28F800B3

    SmartDie

    Abstract: IMC016FLSC PLCC 44 intel package dimensions 28f800b5 flash ftl intel 28F008B3 28F016B3 28F032B3 IMC008FLSc 28F160F3
    Text: Flash Memory Quick Reference Guide ion 7 Vers ’99 Mar. Intel package and tools lineup Intel Package and Tools Lineup • Software Builder–Application software for Intel Flash memory products. • Online Utilities–Understand how Intel® Flash memory products will


    Original     		PDF USA/0399/10K/MS SmartDie IMC016FLSC PLCC 44 intel package dimensions 28f800b5 flash ftl intel 28F008B3 28F016B3 28F032B3 IMC008FLSc 28F160F3

    IMC016FLSC

    Abstract: 28F320C3 IMC008FLSC PLCC 44 intel package dimensions 28F800C3a 28f800b5 3 Volt Intel StrataFlash Memory 28F160S5 28F400B5 28F008B3
    Text: Flash Memory Quick Reference Guide ion 9 Vers ’99 April Intel package and tools lineup Intel Package and Tools Lineup • Software Builder–Application software for Intel Flash memory products. • Online Utilities–Understand how Intel® Flash memory products will


    Original     		PDF USA/0499/10K/MS IMC016FLSC 28F320C3 IMC008FLSC PLCC 44 intel package dimensions 28F800C3a 28f800b5 3 Volt Intel StrataFlash Memory 28F160S5 28F400B5 28F008B3

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    56-PIN

    Abstract: LH28F008SA LH28F016SU
    Text: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19


    Original     		PDF LH28F016SU 56-PIN J63428 SMT96111 LH28F008SA LH28F016SU

    Migration Guide for Intel StrataFlash Memory J

    Abstract: Intel StrataFlash Memory j3 Intel Stacked CSP 1997 28F008B3 28F008S5 28F016B3 28F128W18 28F160B3 28F320B3 28F800B3
    Text: PRODUCT SELECTION MATRIX P Intel 1.8V Wireless Flash W18/W30 R O D Intel StrataFlash® Memory (J3) U C T S Synchronous Intel StrataFlash® Memory (K3/K18) Advanced+ Boot Block (C3) X8 Organization X16 8 Mb 16 Mb 32 Mb Density 64 Mb 128 Mb 256 Mb Burst


    Original     		PDF W18/W30) K3/K18) 128-bit Migration Guide for Intel StrataFlash Memory J Intel StrataFlash Memory j3 Intel Stacked CSP 1997 28F008B3 28F008S5 28F016B3 28F128W18 28F160B3 28F320B3 28F800B3

    ML86V8101

    Abstract: ML610Q794G ML7147 ML610Q488 ML98 ML7138 ML7247-001
    Text: Notes 1 The information contained in this document is provided as of october,2013. 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative as listed below) and verify the


    Original     		PDF HUN-1119 ML86V8101 ML610Q794G ML7147 ML610Q488 ML98 ML7138 ML7247-001

    LH28F008SA

    Abstract: LH28F016SA
    Text: LH28F016SA 16M 1M x 16/2M × 8 Flash Memory FEATURES DESCRIPTION • User-Selectable 3.3 V or 5 V VCC SHARP’s LH28F016SA 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high-performance, personal computing and


    Original     		PDF LH28F016SA 16/2M LH28F016SA 56-Lead, 56-Lead 56-pin LH28F008SA

    LH28F016SUT-70

    Abstract: LH28F008SA LH28F016SU LH28F16SUT-70
    Text: LH28F016SU 16M 1M x 16/2M × 8 5 V Single Voltage Flash Memory FEATURES DESCRIPTION • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase SHARP’s LH28F016SU 16M Flash Memory is a revolutionary architecture which enables the design of truly


    Original     		PDF LH28F016SU 16/2M LH28F016SU 56-Lead 56-pin LH28F016SUT-70 LH28F016SUT-70 LH28F008SA LH28F16SUT-70

    NAND Flash Programmer with TSOP-48 adapter

    Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
    Text: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    hitachi hn27c256

    Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
    Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /


    Original     		PDF HM514100 HM514400 HM514800 HM51S4800 HM514900 HN62W4116 HN62W5016N HM62W4018N 50/40ns) hitachi hn27c256 hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note

    Samsung "NAND Flash" "ordering information"

    Abstract: NOR Flash samsung nor flash samsung memory
    Text: 3. ORDERING INFORMATION NOR FLASH MEMORY Z 3 KM 28 B CCC D E - F GG Access Time SAMSUNG Memory Block Architecture NOR FLASH Operating Voltage Range Package Operating Temperature Range Densitv/Oraanization 1. SAMSUNG Memory 2. NOR Flash 6. Package Type T -G -Z —


    OCR Scan     		PDF 800-------------------8Mbit, x8/x16 16Mbit, 44-Lead 48-CSP 32000---------------32M 128Mbit Samsung "NAND Flash" "ordering information" NOR Flash samsung nor flash samsung memory

    A10C

    Abstract: A12C A15C A17C LH28F008SA LH28F016SU
    Text: 16M 1M x 1 6 ,2M x 8 Flash Memory 56-PIN TSOP TO P VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 70 ns Maximum Access Time • 0.32 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block • 32 Independently Lockable Blocks


    OCR Scan     		PDF LH28F008SA 56-Pin, 56TSOP TSOPQ56-P-1420) LH28F016SU TSOP056-P-1420) LH28F016SUT-70 56-pin 28f016sut-16 A10C A12C A15C A17C LH28F008SA

    BA 6688 L

    Abstract: 32ag LH28F016S
    Text: 16M 1M x 1 6 ,2M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation •\ 1« 56 □ WP C Ë iC 2 55 □ WE • 70 ns Maximum Access Time NCC 3 54 □ ÔË • 0.32 MB/sec Write Transfer Rate a 2o IZ 4 53 □ RY/BY A-ig IZ


    OCR Scan     		PDF LH28F008SA 56-Pin, 56-PIN J63428 T96111 BA 6688 L 32ag LH28F016S

    Untitled

    Abstract: No abstract text available
    Text: 16M 1M x 16/2M x 8 Flash Memory FEATURES DESCRIPTION • User-Selectable 3.3 V or 5 V VCc SHARP’S LH 28F016SA16M Flash Memory is a revo­ lutionary architecture which enables the design of truly mobile, high-performance, personal computing and communication products. With innovative capabilities,


    OCR Scan     		PDF 16/2M 56-Lead, LH28F008SA 28F016SA16M LH28F016SA 56-Lead LH28F016SA 56-pin LH28F016SAT-70