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    FLM6472 Price and Stock

    FUJITSU Limited

    FUJITSU Limited FLM6472-4C

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLM6472-4C 24
    • 1 $316.4035
    • 10 $289.2832
    • 100 $271.203
    • 1000 $271.203
    • 10000 $271.203
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    FUJITSU Limited FLM6472-8C

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLM6472-8C 12
    • 1 $578.6095
    • 10 $495.951
    • 100 $495.951
    • 1000 $495.951
    • 10000 $495.951
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    FLM6472 Datasheets (22)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    FLM6472-12D Unknown FET Data Book Scan PDF
    FLM6472-12F Fujitsu C-Band Internally Matched FET Original PDF
    FLM6472-12F Unknown C-Band internally Matched FET Original PDF
    FLM6472-14/D Unknown FET Data Book Scan PDF
    FLM6472-18F Eudyna Devices C-Band Internally Matched FET Original PDF
    FLM6472-18F Fujitsu C-Band Internally Matched FET Original PDF
    FLM6472-25D Unknown FET Data Book Scan PDF
    FLM6472-25F Eudyna Devices C-Band Internally Matched FET Original PDF
    FLM6472-25F Fujitsu C-Band Internally Matched FET Original PDF
    FLM6472-4C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM6472-4C/D Unknown FET Data Book Scan PDF
    FLM6472-4D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM6472-4F Fujitsu C-Band Internally Matched FET Original PDF
    FLM6472-4F Unknown C-Band Internally Matched FET Original PDF
    FLM6472-6D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM6472-6D Unknown FET Data Book Scan PDF
    FLM6472-6F Eudyna Devices C-Band Internally Matched FET Original PDF
    FLM6472-6F Fujitsu C-Band Internally Matched FET Original PDF
    FLM6472-8C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM6472-8C/D Unknown FET Data Book Scan PDF

    FLM6472 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: F, , FLM6472-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		FLM6472-4C 36dBm FLM6472-4C PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz


    OCR Scan     		FLM6472-35DA -45dBc FLM6472-35DA PDF

    U/25/20/TN26/15/850/FLM6472-18DA

    Abstract: No abstract text available
    Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 38% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM6472-25F -46dBc 50ohm FLM6472-25F 25deg 25deatched PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM6472-8F -46dBc FLM6472-8F FCSI0598M200 PDF

    FLM64724F

    Abstract: No abstract text available
    Text: FLM6472-4F C-Band Internally FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package


    Original     		FLM6472-4F -46dBc FLM6472-4F FCSI0999M200 FLM64724F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM6472-6F -46dBc 50ohm FLM6472-6F 25deg PDF

    FLM6472-8F

    Abstract: No abstract text available
    Text: FLM6472-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-8F -46dBc FLM6472-8F FCSI0598M200 PDF

    fet 547

    Abstract: FLM6472-8F
    Text: FLM6472-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-8F -46dBc FLM6472-8F fet 547 PDF

    6472-4D

    Abstract: No abstract text available
    Text: FLM6472-4D Internally Matched Power GaAs FETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Tc = 25°C Pt Storage Temperature


    OCR Scan     		FLM6472-4D 6472-4D PDF

    FLM6472-18F

    Abstract: No abstract text available
    Text: FLM6472-18F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 43.0dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm


    OCR Scan     		FLM6472-18F -46dBc FLM6472-18F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-6F -46dBc FLM6472-6F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-18F -46dBc FLM6472-18F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-8D UJ11jU 39dBm -45dBc 28dBm FLM6472-8D PDF

    FLM6472-4F

    Abstract: No abstract text available
    Text: FLM6472-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-4F -46dBc FLM6472-4F FCSI0999M200 PDF

    FLM6472-6F

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-18DA Internally Matched Power GaAs b'ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 83.3 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		FLM6472-18DA Sou12 37dBm 35dBm 33dBm 31dBm 29dBm 27dBm PDF

    FLM6472-12d

    Abstract: FLM6472-12DA
    Text: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-12DA 41dBm -45dBc 30dBm FLM6472-12DA FLM6472-12d PDF

    FLM6472-25F

    Abstract: No abstract text available
    Text: FLM6472-25F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm


    OCR Scan     		FLM6472-25F -46dBc FLM6472-25F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-4F -46dBc FLM6472-4F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-12F -46dBc FLM6472-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-8F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm


    OCR Scan     		FLM6472-8F -46dBc FLM6472-8F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6D r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 34% (Typ.) Low IM 3 = -45dBc@Po = 27dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-6D UJ11jU -45dBc 27dBm PDF