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    FLX107M Search Results

    FLX107M Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLX107MH-12 Eudyna Devices X, Ku Band Power GaAs FET Original PDF
    FLX107MH-12-E1 Fujitsu FET: P Channel: ID 0.6 A Original PDF

    FLX107M Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


    Original     		PDF FLX107MH-12 FLX107MH-12

    FUJITSU XBAND

    Abstract: No abstract text available
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


    Original     		PDF FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND

    FLX107MH-12

    Abstract: No abstract text available
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


    Original     		PDF FLX107MH-12 FLX107MH-12

    FLX107MH-12

    Abstract: FUJITSU XBAND
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


    Original     		PDF FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND

    Untitled

    Abstract: No abstract text available
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


    Original     		PDF FLX107MH-12 FLX107MH-12

    FLX107MH-12

    Abstract: No abstract text available
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general


    Original     		PDF FLX107MH-12 FLX107MH-12

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    FUJITSU XBAND

    Abstract: FLX107MH-12 fujitsu gaas fet
    Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX107M H-12 is a pow er G aAs FET that is designed for general


    OCR Scan     		PDF FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND fujitsu gaas fet