FLX207MH-12
Abstract: MH 1051
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
MH 1051
|
PDF
|
FLX207MH-12
Abstract: No abstract text available
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
FCSI0598M200
|
PDF
|
FLX207MH-12
Abstract: PT 1132
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
PT 1132
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
|
PDF
|
TO 609 MH
Abstract: FLX207MH-12 14GHZ GAAS
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
FCSI0598M200
TO 609 MH
14GHZ GAAS
|
PDF
|
FUJITSU XBAND
Abstract: No abstract text available
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
FCSI0598M200
FUJITSU XBAND
|
PDF
|
FLX207MH-12
Abstract: TO 609 MH
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
|
Original
|
FLX207MH-12
FLX207MH-12
TO 609 MH
|
PDF
|
FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
|
Original
|
FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
|
PDF
|
FUJITSU XBAND
Abstract: FLX207MH-12 fujitsu gaas fet
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX207M H-12 is a pow er G aAs FET that is designed for general
|
OCR Scan
|
FLX207MH-12
FLX207MH-12
FCSI0598M200
FUJITSU XBAND
fujitsu gaas fet
|
PDF
|
