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    FM21L16 Price and Stock

    Infineon Technologies AG FM21L16-60-TG

    IC FRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey FM21L16-60-TG Tray
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    Infineon Technologies AG FM21L16-60-TGTR

    IC FRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey FM21L16-60-TGTR Reel
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    Ramtron International Corporation FM21L16-60-TG

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    Bristol Electronics FM21L16-60-TG 6
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    Cypress Semiconductor FM21L16-60-TG

    2Mbit FRAM Memory | IC FRAM 2M PARALLEL 44TSOP II
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    Win Source Electronics FM21L16-60-TG 5,600
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    Cypress Semiconductor FM21L16-60-TGTR

    IC FRAM 2MBIT 60NS 44TSOP
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    Win Source Electronics FM21L16-60-TGTR 4,100
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    FM21L16 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FM21L16 Ramtron International 2Mbit FRAM Memory Original PDF
    FM21L16-60-TG Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 2MBIT 60NS 44TSOP Original PDF
    FM21L16-60-TG Ramtron International 2Mbit FRAM Memory Original PDF
    FM21L16-60-TGTR Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 2MBIT 60NS 44TSOP Original PDF

    FM21L16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM21L16

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 33MHz FM21L16

    Untitled

    Abstract: No abstract text available
    Text: FM21L16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		PDF FM21L16 151-year 30-ns

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 33MHz 128Kx16 FM21L16

    FM21L16-60-TG

    Abstract: FM21L16-60-TGTR FM18L08 FM20L08 FM21L16 JESD22-A114-F
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 33MHz 128Kx16 FM21L16 FM21L16-60-TG FM21L16-60-TGTR FM18L08 FM20L08 JESD22-A114-F

    FM21L16

    Abstract: FM18L08 FM20L08 FM21L16-60-TG
    Text: Preliminary FM21L16 2Mbit FRAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 40MHz 128Kx16 FM21L16 FM21L16, FM21L16-60-TG FM18L08 FM20L08 FM21L16-60-TG

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2-Mbit 128Kx16 F-RAM Memory Features SRAM Compatible • Industry Std. 128Kx16 SRAM Pinout • 60 ns Access Time, 110 ns Cycle Time Advanced Features • Software Programmable Block Write Protect Description The FM21L16 is a 128Kx16 nonvolatile memory that


    Original     		PDF FM21L16 128Kx16) 128Kx16 FM21L16

    FM21L16

    Abstract: FM18L08 FM20L08 FM21L16-60-TG
    Text: Preliminary FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 40MHz 128Kx16 FM21L16 FM21L16, FM21L16-60-TG FM18L08 FM20L08 FM21L16-60-TG

    FM21L16

    Abstract: FM21L16-60-TG FM18L08 FM20L08 TSOP-II 44 Recommended PCB Footprint
    Text: Preliminary FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM21L16 128Kx16 256Kx8 40MHz 128Kx16 FM21L16 FM21L16, FM21L16-60-TG FM21L16-60-TG FM18L08 FM20L08 TSOP-II 44 Recommended PCB Footprint

    Untitled

    Abstract: No abstract text available
    Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically


    Original     		PDF FM28V202A 44-pin 151-year 30-ns

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY FM28V202 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM28V202 FM28V202

    fm23mld16

    Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
    Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine


    Original     		PDF 300-million fm23mld16 FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY FM28V202 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM28V202 FM28V202

    Untitled

    Abstract: No abstract text available
    Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 °C to +85 °C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically


    Original     		PDF FM28V202A 44-pin 151-year 30-ns

    Untitled

    Abstract: No abstract text available
    Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically


    Original     		PDF FM28V202A 44-pin 151-year 30-ns

    chn 734

    Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
    Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine


    Original     		PDF 300-million chn 734 FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS

    Untitled

    Abstract: No abstract text available
    Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 °C to +85 °C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically


    Original     		PDF FM28V202A 44-pin 151-year 30-ns

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V202 128Kx16 256Kx8 33MHz 128Kx16

    FM24CL64b

    Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
    Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine


    Original     		PDF s80921 FM24CL64b FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b

    FM28V202

    Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
    Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V202 128Kx16 256Kx8 33MHz -40ess FM28V202 FM28V202TG TSOP-II 44 Recommended PCB Footprint

    line following robot CIRCUIT using pic

    Abstract: FM21L16 PIC17CXX PIC24FJ128GA010 SP3232 ferroelectric 2 transistors nkt ceramic
    Text: Put a new memory technology to work in your robot! hether they be fact or fiction, you d o n 't see many things ro b o tic m oving a b o u t w ith trailing AC line cords. As a m atter of fact, if you classify today's sm art weapons as 'bots, the only serious


    OCR Scan     		PDF impor10; FM21L16 SP3232 FM21L16 PIC24FJ128GA010 line following robot CIRCUIT using pic PIC17CXX ferroelectric 2 transistors nkt ceramic