FM23MLD16
Abstract: 3.3v 1Mx8 static ram high speed
Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 Configurable as 1Mx8 Using /UB, /LB High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz
|
Original
|
FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16
3.3v 1Mx8 static ram high speed
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16
|
PDF
|
SBC-34
Abstract: fanuc intel motherboard core2duo CHIPSIP FM23MLD16 i.MX233 chevrolet NuPRO-E320 ADS1115 USB-7204
Text: Ramtron FM23MLD16 8-Mbit Parallel Nonvolatile F-RAM Memory ~ Embedded Star Upgrade Your RAM Memory Digi-Key Using Our Ram Memory Card Instant Availability, Pricing Specs. Advisor Tool, Find The Exact RAM Quality Components & Service Memory You Need! www.digikey.com
|
Original
|
FM23MLD16
CAT8900
g/2009/07/23/ramtron-fm23mld16-fram-fbga/
SBC-34
fanuc
intel motherboard core2duo
CHIPSIP
i.MX233
chevrolet
NuPRO-E320
ADS1115
USB-7204
|
PDF
|
fm23mld16
Abstract: RAMTRON FM23MLD16-60-BG fram
Text: Errata for FM23MLD16 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 www.ramtron.com Errata Number 001 Date July 27, 2009 Product FM23MLD16 - 8Mb 512Kx16 FRAM Initial FM23MLD16 devices have been mis-marked. The current topside product marking shows “FM23MLD1655-BG” but should be marked “FM23MLD16-60-BG”. The date code of the affected devices is 0920. The
|
Original
|
FM23MLD16
FM23MLD16
512Kx16)
FM23MLD1655-BG"
FM23MLD16-60-BG"
RAMTRON
FM23MLD16-60-BG
fram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
|
PDF
|
8Mbit FRAM
Abstract: No abstract text available
Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 Configurable as 1Mx8 Using /UB, /LB High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz
|
Original
|
FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16
8Mbit FRAM
|
PDF
|
FM23MLD16-60-BG
Abstract: FM23MLD16 fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed
Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz
|
Original
|
FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16-60-BG
fm23mld16-60
fm23mld1660bg
3.3v 1Mx8 static ram high speed
|
PDF
|
MSL3 RoHS FBGA
Abstract: fm23mld16 failure rate
Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM21LD16
128Kx16
256Kx8
33MHz
128Kx16
MSL3 RoHS FBGA
fm23mld16 failure rate
|
PDF
|
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
|
Original
|
GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16
FM22LD16-55-BG
C8556953BG1
|
PDF
|
fm23mld16
Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
|
Original
|
300-million
fm23mld16
FM3316
7313 28 pin
FM25L04
soic8 footprint
interface 8KB ROM and 16KB RAM to 8051
FM22L16
FM6124
footprint soic28
RAMTRON
|
PDF
|
FBGA "pin-compatible"
Abstract: fm23mld16 sports day 38242
Text: Technologies Design Hotspots Home Resources Product Locator Shows Magazine Feature Articles eBooks & Whitepapers Joe's Blog Jobs More. E-Newsletter Datasheets Product Locator >> Semiconductors >> Memory >> DRAM, SRAM aand other RAM Reprints Email this Article
|
Original
|
FM23MLD16
48-pin
om/locator/products/ArticleID/38242/38242
FBGA "pin-compatible"
sports day
38242
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM21LD16
128Kx16
256Kx8
33MHz
128Kx16
FM21LD16,
C8556953BG1,
FM21LD16-60-BG
C8556953BG1
FM21LD16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM21LD16 2-Mbit 128Kx16 F-RAM Memory Features SRAM Compatible • JEDEC 128Kx16 SRAM Pinout • 60 ns Access Time, 110 ns Cycle Time Advanced Features • Software Programmable Block Write Protect Description The FM21LD16 is a 128Kx16 nonvolatile memory
|
Original
|
FM21LD16
128Kx16)
128Kx16
FM21LD16
|
PDF
|
|
MSL3 RoHS FBGA
Abstract: FM22LD16 FM23MLD16 FM22LD16-55-BG
Text: Pre-Production FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16
C8556953BG1,
FM22LD16-55-BG
C8556953BG1
MSL3 RoHS FBGA
FM23MLD16
FM22LD16-55-BG
|
PDF
|
FM22LD16-55-BGTR
Abstract: FM22LD16-55-BG
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
FM22LD16-55-BGTR
FM22LD16-55-BG
|
PDF
|
chn 734
Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
|
Original
|
300-million
chn 734
FM3316
CHN 545
interface 8KB ROM and 16KB RAM to 8051
fm23mld16
FM25L04
MLF68
FM24C16A
FM22L16
FM28V020 MATERIALS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM • Organized as 64Kx16 Configurable as 128Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM28V102
64Kx16
128Kx8
33MHz
64Kx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM21LD16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and
|
Original
|
FM21LD16
151-year
30-ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM21LD16
128Kx16
256Kx8
33MHz
128Kx16
FM21LD16
FM21LD16,
C8556953BG1,
FM21LD16-60-BG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM22LD16 4-Mbit 256Kx16 F-RAM Memory Features SRAM Compatible • JEDEC 256Kx16 SRAM Pinout • 55 ns Access Time, 110 ns Cycle Time Advanced Features • Software Programmable Block Write Protect Description The FM22LD16 is a 256Kx16 nonvolatile memory
|
Original
|
FM22LD16
256Kx16)
256Kx16
FM22LD16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM28V202
128Kx16
256Kx8
33MHz
128Kx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process
|
Original
|
FM22LD16
256Kx16
512Kx8
40MHz
256Kx16
C8556953BG1,
FM22LD16-55-BG
C8556953BG1
FM22LD16
|
PDF
|
MSL3 RoHS FBGA
Abstract: fm23mld16 FM21LD16-60-BG FM22LD16
Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM21LD16
128Kx16
256Kx8
40MHz
128Kx16
FM21LD16
48-ball
MSL3 RoHS FBGA
fm23mld16
FM21LD16-60-BG
FM22LD16
|
PDF
|