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    L200M

    Abstract: fmh17N FMH17
    Text: FMH17N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original     		PDF FMH17N60ES L200M fmh17N FMH17

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


    Original     		PDF O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E

    17n60

    Abstract: No abstract text available
    Text: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMH17N60ES MS5F7250 H04-004-05 H04-004-03 17n60