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    FMM5806X Search Results

    FMM5806X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FMM5806X Fujitsu 24-27.0 GHz Power Amplifier MMIC Original PDF

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    Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original
    PDF FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: No abstract text available
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original
    PDF FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz

    FUJITSU SEMICONDUCTOR phemt

    Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original
    PDF FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original
    PDF FMM5806X 26dBm FMM5806X