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    FMV06N60ES

    Abstract: fmv06n60e N-Channel mosfet 600v 36A
    Text: FMV06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original     		PDF FMV06N60ES O-220F FMV06N60ES fmv06n60e N-Channel mosfet 600v 36A

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


    Original     		PDF O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E

    06N60E

    Abstract: IRP10 06N60ES ic MARKING QG FMV06N60ES 06N60
    Text: DATE DRAWN Sep.-30-'08 CHECKED Sep.-30-'08 CHECKED Sep.-30-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMV06N60ES MS5F7218 H04-004-05 H04-004-03 06N60E IRP10 06N60ES ic MARKING QG FMV06N60ES 06N60