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    FOOTPRINT SOT 223 Search Results

    FOOTPRINT SOT 223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    FOOTPRINT SOT 223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    33223

    Abstract: No abstract text available
    Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33223 FOR IDS33223 REV 1-2012 SOT-223 SC-73 SURFACE MOUNT DEVICES B PINS ON .100 in. CENTERS OFFER COMPATIBILITY WITH BREADBOARDS AND SOCKETS. DEVICE FOOTPRINT


    Original     		PDF IDS33223 OT-223 SC-73 020in. 008in. 33223

    33623

    Abstract: No abstract text available
    Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL IDS33623 REV 1-2012 SOT-223 SC-73 33623 FOR HIGHER CURRENT APPLICATIONS B ALWAYS CONSULT DEVICE DATA SHEET TO INSURE PROPER FIT SAME DEVICE FOOTPRINT AS MODEL


    Original     		PDF IDS33623 OT-223 SC-73 33623

    MARK AB 5PIN

    Abstract: No abstract text available
    Text: TC1016 80mA, Tiny CMOS LDO With Shutdown FEATURES GENERAL DESCRIPTION • ■ The TC1016 is a high accuracy typically ±0.5% CMOS upgrade for bipolar low dropout regulators. It is offered in an SC-70 package, which represents 50% reduced footprint vs. the widely used SOT-23 package.


    Original     		PDF TC1016 SC-70 OT-23 DS21666A-page MARK AB 5PIN

    TRANSISTOR bH-16

    Abstract: onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3 marking BH-10
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56 TRANSISTOR bH-16 onsemi SOT-223 16T1 BCP53T1 marking BH-10

    TRANSISTOR AH-16

    Abstract: AH-16 transistor TRANSISTOR AH-10 AH MARKING SOT223 onsemi SOT-223 16T1 BCP53 BCP53T1 BCP53T3 BCP56
    Text: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF BCP53T1 OT-223 BCP56 inch/1000 BCP53T3 inch/4000 BCP53T1 r14525 TRANSISTOR AH-16 AH-16 transistor TRANSISTOR AH-10 AH MARKING SOT223 onsemi SOT-223 16T1 BCP53 BCP56

    TRANSISTOR LWW 20

    Abstract: transistor code AS3 BSP52T1 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3
    Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is


    Original     		PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 r14525 BSP52T1/D TRANSISTOR LWW 20 transistor code AS3 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 BSP16T1

    G1117T63U

    Abstract: IT 223 G1117
    Text: G1117 Global Mixed-mode Technology Inc. 1A Adjustable Low-Dropout Linear Regulator Features General Description „Available in adjust version „Space saving SOT 223 package „Internal short circuit current limiting „Internal over temperature protection


    Original     		PDF G1117 G1117 800mA G1117T63U IT 223

    sot-223 code marking

    Abstract: No abstract text available
    Text: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 BSP16T1 r14525 BSP19AT1/D sot-223 code marking

    TRANSISTOR AH-16

    Abstract: AH MARKING SOT223 TRANSISTOR AH-10 16T1 BCP53 BCP53T1 BCP53T3 BCP56 sot 223 marking code AH AH16 transistor
    Text: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF BCP53T1 OT-223 BCP56 inch/1000 BCP53T3 inch/4000 BCP53T1 BCP53 TRANSISTOR AH-16 AH MARKING SOT223 TRANSISTOR AH-10 16T1 BCP56 sot 223 marking code AH AH16 transistor

    Untitled

    Abstract: No abstract text available
    Text: SS8117 800mA Adjustable Low-Dropout Regulator FEATURES DESCRIPTION Dropout voltage typically 1.2V @ I O = 800mA Output current in excess of 800mA Adjustable output voltage Space-saving SOT-223 package Internal short circuit current limit Internal over temperature protection


    Original     		PDF SS8117 800mA 800mA OT-223 SS8117 800mA.

    Untitled

    Abstract: No abstract text available
    Text: SS8117G 1A Adjustable Low-Dropout Regulator FEATURES DESCRIPTION Dropout voltage typically 1.2V @ I O = 800mA Output current in excess of 1A Adjustable output voltage Space-saving SOT-223 package Internal short circuit current limit Internal over temperature protection


    Original     		PDF SS8117G 800mA OT-223 SS8117G

    BSP16T1

    Abstract: BSP19AT1 SMD310
    Text: ON Semiconductort NPN Silicon Epitaxial Transistor BSP19AT1 ON Semiconductor Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 r14525 BSP19AT1/D BSP16T1 BSP19AT1 SMD310

    BSP52T1

    Abstract: BSP52T1G BSP52T3 BSP52T3G BSP62T1 306 marking code transistor
    Text: BSP52T1, BSP52T3 Preferred Devices NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is


    Original     		PDF BSP52T1, BSP52T3 OT-223 BSP52T1 inch/1000 BSP62T1 BSP52T1G BSP52T3 BSP52T3G BSP62T1 306 marking code transistor

    BCP68

    Abstract: BCP69T1 BCP69T3
    Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface


    Original     		PDF BCP69T1 OT-223 BCP69T1 inch/1000 BCP69TC r14525 BCP69T1/D BCP68 BCP69T3

    sot-223 body marking D K Q F

    Abstract: MV7005T1 pd 223 V7005
    Text: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF MV7005T1/D MV7005T1 OT-223 sot-223 body marking D K Q F MV7005T1 pd 223 V7005

    SOT-223 P1f

    Abstract: p1f sot223
    Text: ON Semiconductort PZT2222AT1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 PZT2222AT1 SOT-223 P1f p1f sot223

    SOT-223 P1f

    Abstract: PZT2222AT1
    Text: ON Semiconductort PZT2222AT1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 r14525 PZT2222AT1/D SOT-223 P1f

    TRANSISTOR bH-16

    Abstract: bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56 TRANSISTOR bH-16 bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1

    AYW marking code IC

    Abstract: BSP52T1 BSP52T1G BSP52T3 BSP52T3G BSP62T1 transistor code AS3
    Text: BSP52T1, BSP52T3 Preferred Devices NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is


    Original     		PDF BSP52T1, BSP52T3 OT-223 BSP52T1 inch/1000 BSP62T1 BSP52T1/D AYW marking code IC BSP52T1G BSP52T3 BSP52T3G BSP62T1 transistor code AS3

    transistor marking p2f

    Abstract: MARKING p2F p2f marking
    Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 r14525 PZT2907AT1/D transistor marking p2f MARKING p2F p2f marking

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Epitaxial Transistor BSP19AT1 Motorola Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223


    Original     		PDF OT-223 inch/1000

    MMFT3055VLT1

    Abstract: MMFT3055VLT3 TMOS E-FET AN569 MMFT3055VL SMD310
    Text: MOTOROLA Order this document by MMFT3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS V SOT-223 for Surface Mount Designer's MMFT3055VL N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This


    Original     		PDF MMFT3055VL/D OT-223 MMFT3055VL MMFT3055VL/D* MMFT3055VLT1 MMFT3055VLT3 TMOS E-FET AN569 MMFT3055VL SMD310

    TMOS E-FET

    Abstract: AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3 SMD310 A/Detector/"Detector+IC"/"CD"/MMFT3055V
    Text: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS V SOT-223 for Surface Mount Designer's MMFT3055V N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This


    Original     		PDF MMFT3055V/D OT-223 MMFT3055V MMFT3055V/D* TMOS E-FET AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3 SMD310 A/Detector/"Detector+IC"/"CD"/MMFT3055V