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    FOR 1 160V 379 Search Results

    FOR 1 160V 379 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    FOR 1 160V 379 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTN5551FL

    Abstract: TS16949 ZXTP5401FL
    Text: ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating


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    PDF ZXTN5551FL 600mA 330mW ZXTP5401FL ZXTN5551FLTA D-81541 ZXTN5551FL TS16949 ZXTP5401FL

    1E14

    Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
    Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


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    PDF FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


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    PDF SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG

    Untitled

    Abstract: No abstract text available
    Text: REA Aluminum Electrolytic Capacitors CE04 Type Features •85°C, 2000 ~ 3000 hours assured •Standard series for general purpose SPECIFICATIONS Items Performance Operating Temperature Range -40℃ ~ +85℃ Capacitance Tolerance Rated voltage ≦100V after 2 minutes


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    PDF 120Hz, CV1000

    complementary npn-pnp

    Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZDT6757 -160V, -200V, -100mA, -10mA* complementary npn-pnp complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725

    FZT757

    Abstract: 200V 100MA NPN t6757 FZT657
    Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757


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    PDF ZDT6753 ZDT6757 T6757 OT223) -10mA, -160V, -200V, -100mA, -10mA* FZT757 200V 100MA NPN t6757 FZT657

    Untitled

    Abstract: No abstract text available
    Text: RMV ALUMINUM ELECTROLYTIC CAPACITORS 105 ℃, Sub-miniature, Radial Leads SERIES ▣ Features § § § § 105℃ , Sub-miniature, Radial Wide Operating Temperature Range High CV Smaller than RMU Load Life of 1000 hours at 105℃ ▣ Specifications Item Performance Characteristics


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    PDF 10X12 10X16 10X20 16X25

    Lelon rea

    Abstract: No abstract text available
    Text: REA Aluminum Electrolytic Capacitors CE04 Type Features •85°C, 2000 ~ 3000 hours assured •Standard series for general purpose SPECIFICATIONS Items Performance Operating Temperature Range -40℃ ~ +85℃ Capacitance Tolerance Rated voltage ≦100V after 2 minutes


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    PDF 120Hz, 2012E2 Lelon rea

    DIN-46228 T3

    Abstract: 1793750000
    Text: Data Sheet • PCB Products PCB Connectors 1 8 . 3 W h NE Pitc – T M S SL SL-SMT 3.81/SL 3.81 BL 3.81 The 3.81 mm 0.51 inch pitch connector system extends the selection of connectors available to the designer in the practical 3 mm range. The pin headers are available


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    PDF 81/SL DIN-46228 T3 1793750000

    E60693

    Abstract: No abstract text available
    Text: Data Sheet • PCB Products LSF-SMT 135° PCB terminal block for lead-free soldering processes with innovative connection technology: ” P u s h I n“ The ”Push In“ direct-connection terminal connector system ensures short wiring times: reductions of up to 50 % for the ”connect conductor“ workstep compared to leaf-spring


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    PDF machi0000 H07V-K1 E60693

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet • PCB Products LSF-SMT 135° PCB terminal block for lead-free soldering processes with innovative connection technology: ” P u s h I n“ The ”Push In“ direct-connection terminal connector system ensures short wiring times: reductions of up to 50 % for the ”connect conductor“ workstep compared to leaf-spring


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    PDF H07V-K1

    Richey

    Abstract: Richey rmd 8X16 BN2845M2.5X12
    Text: RMD Series RICHEY Axial Lead Polar Industrial, Automotive, Audio, Video, Lighting Low voltage • • SPECIFICATIONS Item Characteristics Operating Temperature Range ºC -40ºC + 85ºC Rated Voltage Range (V) 3V ~ 100V Rated Capacitance Range 0.1 µF ~ 40000 µF


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    PDF 100Hz) 120HZ 01CV3 120HZ 10X24 Richey Richey rmd 8X16 BN2845M2.5X12

    SK121

    Abstract: control light intensity using SCR EL12 SP4415 SP4415CN SCHEMATIC circuit scr H-Bridge Nippon capacitors
    Text: SP4415 SIGNAL PROCESSING EXCELLENCE Electroluminescent Lamp Driver with Selectable Level Outputs • ■ ■ ■ ■ 2.2 V- 3.6 V Battery Operation 50 nA Maximum Standby Current Four Level Selectable Output High Voltage Output 140VPP Typical High Impedance Clock Signal


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    PDF SP4415 140VPP SP4415 SP4415DS/06 SK121 control light intensity using SCR EL12 SP4415CN SCHEMATIC circuit scr H-Bridge Nippon capacitors

    ACT 6040

    Abstract: CH5070AS-203K-006 gunze Nippon capacitors SCHEMATIC circuit scr oscillator
    Text: SP4415 SIGNAL PROCESSING EXCELLENCE Electroluminescent Lamp Driver with Selectable Level Outputs • ■ ■ ■ ■ 2.2 V- 3.3 V Battery Operation 50 nA Maximum Standby Current Four Level Selectable Output High Voltage Output 140VPP Typical High Impedance Clock Signal


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    PDF SP4415 140VPP SP4415 SP4415DS/05 ACT 6040 CH5070AS-203K-006 gunze Nippon capacitors SCHEMATIC circuit scr oscillator

    schematic diagram dc-ac inverter using scr

    Abstract: schematic diagram dc-ac inverter ABE 407 SCHEMATIC circuit scr H-Bridge schematic sumida backlight inverter schematic hitachi lcd power supply unit Sankyo Shoji hitachi lcd backlight schematic SK 9080 nec lcd inverter schematic
    Text: SP4427 Electroluminescent Lamp Driver Dual Oscillators with High Drive Capability • DC to AC Inverter for EL Backlit Display Panels ■ Low Voltage, Single Battery Operation vbat > 1.1 Vdc ■ Dual Oscillator Operation for Application Flexibility ■ Low Current Standby Mode


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    PDF SP4427 SP4427 100nA SP4427DS/01 schematic diagram dc-ac inverter using scr schematic diagram dc-ac inverter ABE 407 SCHEMATIC circuit scr H-Bridge schematic sumida backlight inverter schematic hitachi lcd power supply unit Sankyo Shoji hitachi lcd backlight schematic SK 9080 nec lcd inverter schematic

    1RF9630

    Abstract: Diode SMD SJ 65a smd A9A IRF9630 ts65a Diode SMD SJ 05 rd152 A9A smd S65A
    Text: PD-9.352F International XORRectifier IRF9630 HEXFET Pow er M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - "200V ^DS on = 0 -8 0 Q iD = -6.5A


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    PDF IRF9630 O-220 -200V 0-80Q 1RF9630 Diode SMD SJ 65a smd A9A ts65a Diode SMD SJ 05 rd152 A9A smd S65A

    b 1185

    Abstract: No abstract text available
    Text: IRLW/I610A Advanced Power MOSFET FEATURES BVdss = 200 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ Lower Leakage Current : 10 MA Max. @ VDS= 200V


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    PDF IRLW/I610A b 1185

    fss230

    Abstract: S230D
    Text: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    PDF 440C1 FSS230D, FSS230R fss230 S230D

    Untitled

    Abstract: No abstract text available
    Text: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


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    PDF FSS230D, FSS230R O-257AA MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage


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    PDF ZDT6757 -100mA, lc--100mA, 100mA, -10mA, 20MHz FZT757

    smd diode marking JC

    Abstract: AN-994 IRF9630S SMD-220 smd diode marking JJ
    Text: International S Rectifier PD-9.920 IRF9630S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s =-200V R DS on = 0 - 8 0 0


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    PDF IRF9630S -200V 0-80O SMD-220 smd diode marking JC AN-994 IRF9630S smd diode marking JJ

    RFL1N20L

    Abstract: RFP2N20L RFL1N18L RFP2N18L
    Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET


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    PDF 307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


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    PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N