Untitled
Abstract: No abstract text available
Text: 2014-01-10 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.1 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ
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D-93055
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Q62702P0885
Abstract: BPW21
Text: 2007-04-03 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.0 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ
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D-93055
Q62702P0885
BPW21
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KIP-M1M
Abstract: InGaas PIN photodiode chip
Text: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD
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Abstract: No abstract text available
Text: Six-Element SMD Photodiode Array OPR2101 Features: • • • • • Six-PIN photodiode array High-temperature chip carrier Closely matched responsivity between elements Easily mountable in any configuration Suitable for harsh industrial operating conditions
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OPR2101
OPR2101
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photodiode encoder
Abstract: motor encoder photodiode array encoder
Text: Six-Element SMD Photodiode Array OPR2101 Features: • • • • • Six-PIN photodiode array High-temperature chip carrier Closely matched responsivity between elements Easily mountable in any configuration Suitable for harsh industrial operating conditions
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OPR2101
OPR2101
photodiode encoder
motor encoder
photodiode array encoder
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diode 1233
Abstract: 650NM photodiode 880NM 1233
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-1233 1. Scope : 1-1 This specification applies to extra high speed PIN silicon photodiode chips. Device No. PD-1233 1-2 High modulation bandwidth >100mhz 1-3 Disign for irda transmission systems requirement. 1-4 Low applied voltage , low junction capacitance , low series resistance.
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PD-1233
100mhz)
030mm
100mA
880nm
650nm
diode 1233
650NM photodiode
880NM
1233
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AW30
Abstract: 0125mm
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-1072 1. Scope : 1-1. This specification applies to extra high speed PIN silicon photodiode chips. Device No. PD-1072 1-2. fast response time 1-3. disign for irda transmission systems requirement. 1-4. low applied voltage , low junction capacitance , low series resistance.
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PD-1072
038mm
125mm
880nm
AW30
0125mm
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10G APD chip
Abstract: EMCORE APD
Text: G3072-408, 10G Avalanche Photodiode, Coplanar Bottom Illuminated APD DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-3072-408 10G Avalanche Photodiode, Coplanar Bottom Illuminated Chip is designed for GPON application products. It has high responsivity and low capacitance and is ideally suited for low cost, high-speed
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G3072-408,
PS-3072-408
G3072-408
10G APD chip
EMCORE APD
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InGaas PIN photodiode chip
Abstract: datasheets for photodiode chips
Text: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-M25-1
KIP-M25-1
InGaas PIN photodiode chip
datasheets for photodiode chips
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InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
Text: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-107-1
KIP-107-1
-40hange
250x250
InGaas PIN photodiode chip
for photodiode chips
pin InGaAs chip
1071 cp
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD55-C
13PD55-C,
1300nm
-40oC
250oC
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1500-nm
Abstract: No abstract text available
Text: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD2M-TO The 35PD2M-TO, an InGaAs photodiode with a 2mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed.
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35PD2M-TO
35PD2M-TO,
1500-nm
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Untitled
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for moderate-to-high speed applications. Efficiency coupling to
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13PD150-S
13PD150-S,
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photodiode InGaAs NEP
Abstract: photodiode 5mm 35PD5M-TO
Text: Ultra-Large Area InGaAs p-i-n Photodiode Sheet 1 of 1 35PD5M-TO The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive, designed for applications in high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high
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35PD5M-TO
35PD5M-TO,
1300nm
1500nm
photodiode InGaAs NEP
photodiode 5mm
35PD5M-TO
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InGaAs photodiode TO-46
Abstract: 1500-nm 35PD1M
Text: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed.
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35PD1M-TO
35PD1M-TO,
Impe502
InGaAs photodiode TO-46
1500-nm
35PD1M
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InGaas PIN photodiode chip
Abstract: for photodiode chips KIP-205-1
Text: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current
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KIP-205-1
KIP-205-1
250x250
InGaas PIN photodiode chip
for photodiode chips
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications
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13PD55-S
13PD55-S,
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InGaAs photodiode
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75-C Anadigics #137599119 The 13PD75-C, an InGaAs photodiode with a 75µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD75-C
13PD75-C,
1300nm
1500nm
-40oC
250oC
InGaAs photodiode
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75-C Anadigics #137599119 The 13PD75-C, an InGaAs photodiode with a 75µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD75-C
13PD75-C,
1300nm
1500nm
-40oC
250oC
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55um
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-C Anadigics #135599116 The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD55-C
13PD55-C,
1300nm
1500nm
-40oC
250oC
55um
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13PD55-S
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor
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13PD55-S
13PD55-S,
200oC,
1300nm
-40oC
250oC
13PD55-S
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13PD75-S
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75-S The 13PD75-S, an InGaAs photodiode with 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small to enable operation
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13PD75-S
13PD75-S,
200oC,
1300nm
-40oC
250oC
13PD75-S
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PIN Photodiode 1550nm
Abstract: 1A464 1550nm photodiode 5 Ghz PIN photodiode responsivity 1550nm 1.1 photodiode 1550nm bandwidth photodiode PIN 1550nm bandwidth 1A465 8 pin ic 293
Text: PRODUCT INFORMATION 1300nm 1A463 1550nm High-Performance PIN This unique PIN Photodiode chip is designed for waveguide-based OEIC OptoElectronic IC transceivers. It is complemented by the 1A464 and 1A465 wavelength-selective PIN Photodiode chips for 1300/1550nm
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1300nm
1A463
1550nm
1A464
1A465
1300/1550nm
1-800-96M
PIN Photodiode 1550nm
1550nm photodiode 5 Ghz
PIN photodiode responsivity 1550nm 1.1
photodiode 1550nm bandwidth
photodiode PIN 1550nm bandwidth
8 pin ic 293
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Untitled
Abstract: No abstract text available
Text: PRODUCT INFORMATION uw 1A463 High-Performance RN This unique PIN Photodiode chip is designed for waveguide-based OEIC OptoElectronic IC transceivers. It is com plem ented by the 1A 464 and 1A465 w avelen gth -selective PIN Photodiode chips for 1300/1550nm
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1A463
1A465
1300/1550nm
l-800-`
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