TS7009
Abstract: SMD Transformer "smd transformer"
Text: Bothhand USA. e-mail: sales@bothhandusa.com http://www.bothhandusa.com 10 BASE-T SMD TRANSFORMER Page : 1/1 P/N: TS7009 DATA SHEET Feature z z z 16 PIN SMD isolation modules to meet the isolation and impedance matching requirements of IEEE 802.3 for10 BASE-T.
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TS7009
for10
-25to
TS7009
SMD Transformer
"smd transformer"
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TLP785GB
Abstract: 11-5L107 TLP785F TLP785 EN60747-5-2 TL-P785 TLP785 TLP78 BR 13005 A
Text: TLP785,TLP785F TOSHIBA Photocoupler GaAs IRED & Photo−Transistor TLP785,TLP785F Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically
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TLP785
TLP785F
TLP785F
TLP785.
11-5L1
TLP785:
TLP785GB
11-5L107
TLP785 EN60747-5-2
TL-P785
TLP78
BR 13005 A
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tvs 6ae
Abstract: SMA6F20A marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me
Text: V ishay I n tertech n o l o g y, I n c . Diodes – Industry’s Lowest Profile SlimSMA Package I INNOVAT AND TEC O L OGY SMA6F5.0A thru SMA6F20A N HN DIODES O 19 62-2012 Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm
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SMA6F20A
23-Nov-11
VMN-PT0322-1206
tvs 6ae
marking 6ap
6bg 92 M
600-AG
6BG TVS
GENERAL SEMICONDUCTOR diodes marking code me
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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Untitled
Abstract: No abstract text available
Text: TLP290 東芝フォトカプラ 赤外LED +フォトトランジスタ TLP290 ○ プログラマブルコントローラ ○ AC/DC インプットモジュール ○ ハイブリッド IC 単位：mm TLP290 はフォトトランジスタと GaAs 赤外発光ダイオードを光結合さ
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Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1
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TO3 RthJA
Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Text: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)
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93792C
O-254AA)
IRHM57064
IRHM53064
IRHM54064
IRHM58064
1000K
O-254AA.
MIL-PRF-19500
TO3 RthJA
IRHM53064
IRHM54064
IRHM57064
IRHM58064
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Untitled
Abstract: No abstract text available
Text: KNP0932, 1145, 1550, 1760, 2480 Wire Wound Leaded Resistors Wire Wound Leaded Resistors •Features －Super heat dissipation, －Instant overload capability －Wide resistance range : 0.1Ω~100Ω －Small linear temperature coefficient －Low noise figure and without annual shift on resistance value
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KNP0932,
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PAH200H48-1R8
Abstract: CSA950 PAH200H48-1R2 PAH200H48-1R5 PAH200H48-2R5 PAH200H48-3R3
Text: PAH200H Series High Current Half Brick DC-DC Converters Industry Standard Package Low voltage outputs to 0.96V Output Currents up to 70A Designed for telecom standards Output voltage adjustment Remote On / Off Key Market Segments & Applications
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PAH200H
com/products/pah200h-series
48VDC-DC
48VDC
1-800-LAMBDA-4
PAH200H48-1R8
CSA950
PAH200H48-1R2
PAH200H48-1R5
PAH200H48-2R5
PAH200H48-3R3
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IEC60950-1
Abstract: PAH200H48-1R2 PAH200H48-1R5 PAH200H48-1R8 PAH200H48-2R5 PAH200H48-3R3
Text: • Industry Standard Package • Low voltage outputs to 0.96V • Output Currents up to 70A • Designed for telecom standards • Output voltage adjustment • Remote On / Off Key Market Segments & Applications Central Office: Broadband: Remote Electronics:
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PAH200H
Feb10
IEC60950-1
PAH200H48-1R2
PAH200H48-1R5
PAH200H48-1R8
PAH200H48-2R5
PAH200H48-3R3
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mosfet motor dc 48v
Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Text: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)
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3792A
O-254AA)
IRHM57064
IRHM53064
IRHM54064
IRHM58064
1000K
co252-7105
mosfet motor dc 48v
IRHM53064
IRHM54064
IRHM57064
IRHM58064
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Untitled
Abstract: No abstract text available
Text: Intel Ethernet Switch FM4000 24-Port 10G Ethernet L2/L3/L4 Switch/Router Datasheet April 7, 2011 Revision: 2.4 Intel® Ethernet Switch FM4000 24-Port 10G Ethernet L2/L3/L4 Switch/Router Table of Contents 1. Introduction . 13
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FM4000
24-Port
VTT21:
VTT19:
VTT22:
VTT20:
VTT23:
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Untitled
Abstract: No abstract text available
Text: Filter, Transformer and Common Mode Choke for10Base-T Twisted Pair 62 Pins Electrical Specifications D ielectric W ith s ta n d in g V o ltag e @ 25°C _JL .050 ^ ' (44 Pics) Insertion Loss ( 1 -1 0 M H z ) S e e Below C ros sta lk ( 1 -1 0 M H z ) -30 dB Min.
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for10Base-T
EPA1954G
EPA1954
EPA1954
PA1954
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lt 6029
Abstract: MALLORY CAPACITOR CATALOG SKA332M1EK33V MALLORY CAPACITORS sk MALLORY CAPACITORS CS SKA101M1CE16V
Text: I Type SKA Axial Leaded Capacitors llAMICONl MallorY DC Leakage Current: 6.3 - 100VDC I = < .03CV or 4/xA Axial Leads whichever is greater Operating T emperature: Miniature Size after 3 minutes. -40°C to +85°C For105°C device, contact NACC Over 100VDC
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100VDC
For105
40/xA
13X21
16X25
18X35
10X21
lt 6029
MALLORY CAPACITOR CATALOG
SKA332M1EK33V
MALLORY CAPACITORS sk
MALLORY CAPACITORS CS
SKA101M1CE16V
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TLC371MD
Abstract: No abstract text available
Text: TLC371, TLC371Y LinCMOS DIFFERENTIAL COMPARATORS ^ _SLCSQ17 - JULY 1991 - R EVISED FEBRUARY 1992 • Single or Dual-Supply Operation D OR P PACKAGE TOP VIEW • Wide Range of Supply Voltages 3 V to 16 V IN - [ 2 a ] V DD
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TLC371,
TLC371Y
SLCSQ17
TLC371
fabLCS017
TLC371MD
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nmfxxxxs
Abstract: LME1212 lme0505 LME0512
Text: LME SERIES Isolated 250mW Single Output features □ High Efficiency for Low Power Applications □ Pin Com patible with N M E & NM L □ 1 kVDC Isolation □ SIP & DIP Package Styles □ Single Output Rail □ Power Density 0.36W /cm 3 □ 3.3V, 5V and 12V Input
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250mW
69cm2
UL94-V0
us00007
530mmÂ
520mmÂ
475mmÂ
nmfxxxxs
LME1212
lme0505
LME0512
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QEC121
Abstract: No abstract text available
Text: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder
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QEC121/122
QSC11X
ST2131
QEC122
74bbfl51
QEC121
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates
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H11N1
H11N2
H11N3
ST1603
ST2028
ST2029
ST2030
ST2032
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C 1114 transistor
Abstract: No abstract text available
Text: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
000b33b
C 1114 transistor
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Untitled
Abstract: No abstract text available
Text: CS61535A Semiconductor Corporation PCM Line Interface Features General Description • Provides Analog PCM Line Interface for T1 and PCM-30 Applications The CS61535 and CS61535A combine the analog transmit and receive line interface functions for a T1/PCM-30 interface in a single 28-pin device. The line
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CS61535A
PCM-30
CS61535
CS61535A
T1/PCM-30
28-pin
32-bit
CS61535
PCM-30.
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Untitled
Abstract: No abstract text available
Text: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET
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H11F1
H11F2
H11F3
ST1603
74bbfl51
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18
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CQX14,
CQX16
CQX14/16
940nm
ST1332
74bbfi
74bbfiSl
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SN751167
Abstract: mc34051 IC equivalent ic
Text: SN65C1167, SN65C1168, SN75C1167, SN75C1168 DUAL DIFFERENTIAL DRIVERS AND RECEIVERS SLLS159 - D4062, MARCH 1993 Meets EIA Standards RS-422-A and CCITT Recommendation V.11 SN65C1167 . . . D Bt, N, OR N S t PACKAGE TOP VIEW BiCMOS Process Technology 1B[ Low Supply Current Requirements
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SN65C1167,
SN65C1168,
SN75C1167,
SN75C1168
SLLS159
D4062,
RS-422-A
SN751167
MC34050
MC34051
mc34051 IC equivalent ic
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Untitled
Abstract: No abstract text available
Text: 03 ! I LM106, LM206, LM306 DIFFERENTIAL COMPARATORS WITH STROBES J • Fast Response Times J OR N DUAL-IN-LINE OR W FLAT PACKAGE • Improved Gain and Accuracy • Fan-Out to 10 Series 54/74 TTL Loads TOP VIEW • Strobe Capability • Short-Circuit and Surge Protection
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LM106,
LM206,
LM306
D1108,
LM306
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