SEM 2006 samsung
Abstract: chrysler ccd toyota engineering standard SEM 2006 7segments opto 1010 toyota standard ts NISSAN WHIRLPOOL LED Sign Board Diagram
Text: AMERICAN AMERICAN OPTOOPTO PLUSPLUS 2010 Company Profile 1206 E. Lexington Ave., Pomona CA 91766 Tel:909 Tel:909-465-0080 465 0080 Fax: 909-465-0130 909 465 0130 www.aopled.com email: info@aopled.com AMERICAN AMERICAN OPTOOPTO PLUSPLUS AMERICAN AMERICAN OPTOOPTO
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168HRS
SEM 2006 samsung
chrysler ccd
toyota engineering standard
SEM 2006
7segments
opto 1010
toyota standard ts
NISSAN
WHIRLPOOL
LED Sign Board Diagram
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Untitled
Abstract: No abstract text available
Text: Skin ford M i erotleviees Product Description SLN-443 Stanford M icrodevices’ SLN-443 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount SOT-143 plastic package. Hetero junction technology is utilized for ultra-linear performance
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SLN-443
OT-143
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IM 337
Abstract: No abstract text available
Text: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0598 Stanford M icrodevices’ SHF-0598 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost ceram icmount ceram ic package. HFET technology improves breakdown voltage for high drain voltage operation. Its
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SHF-0598
33dBm
30dBm
SHF-0598
360L61]
IM 337
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MN1Y
Abstract: 10S120
Text: H Siali ford M icrodevices Product Description SLN-543 Stanford M icrodevices’ SLN-543 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface mount SOT-143 plastic package. Hetero junction technology is utilized for ultra-linear performance
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SLN-543
OT-143
MN1Y
10S120
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ic LM 386
Abstract: g1760
Text: Skin ford M ierotleviees Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth
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SLN-386
ic LM 386
g1760
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FET transistors with s-parameters
Abstract: No abstract text available
Text: H S iali ford M icro d ev ices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its
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SHF-0589
33dBm
600mA.
SHF-0589
118E3J0QI
10BEL19I
FET transistors with s-parameters
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MB522
Abstract: No abstract text available
Text: Stati ford M i crudev ices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage|
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SCA-12
38dBm.
100mW
MB522
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NT 407 F transistor
Abstract: NT 407 F power transistor SLN-407
Text: H Siali ford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc tion technology is utilized for ultra-linear performance to 2.5
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SLN-407
SLN-407
NT 407 F transistor
NT 407 F power transistor
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Untitled
Abstract: No abstract text available
Text: H Siali ford M icrodevices Product Description SLN-376 Stanford M icrodevices’ SLN-376 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 70 mil (1.8mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth
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SLN-376
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Untitled
Abstract: No abstract text available
Text: :fp| Sian ford M ic raclev ices SSW-307 Product Description Stanford M icrodevices’ SSW -307 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-3 GHz Low Cost
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28dBm.
SSW-308
500MHz
-45Cto
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Untitled
Abstract: No abstract text available
Text: H Siali ford M icrodevices SCA-7 Product Description Stanford M icrodevices’ SCA-7 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor m ance up to 3 GHz. The heterojunction increases break
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24dBm.
12dBm
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78s12
Abstract: No abstract text available
Text: S tati ford M i cru d ev ices Product Description SCA-14 Stanford M icrodevices’ SC A -14 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases
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36dBm.
100mW
78s12
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lm 293 iz 5
Abstract: T-522A shf0289 t 522
Text: H Siali ford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor m ance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while minimizing Schottky
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SHF-0289
30dBm
300mA.
lm 293 iz 5
T-522A
shf0289
t 522
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Untitled
Abstract: No abstract text available
Text: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
DC-12
SHF-0187
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Untitled
Abstract: No abstract text available
Text: S tati ford M i cru d ev ices Product Description SHF-0189 Stanford M icrodevices’ SH F-0189 is a high perform ance AIG aAs/G aAs H eterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdow n voltage w hile m inim izing Schottky
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F-0189
SHF-0189
27dBm
150mA.
4MP-14
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SHF 205
Abstract: No abstract text available
Text: r= c~i S u n iord Miuodk? vices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky
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SHF-0186
SHF-0186
DC-12
SHF-0186-TR1
SHF-0186-TR2
SHF-0186-TR3
SHF 205
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ford
Abstract: b73an IP2525 L4503 L4504 L4506 L4509 l4s03 B73a
Text: 3 6 6 7 3 2 0 F O R D AEROSP. 97D 004^n A E R Ö N U T R O N IC 17 >F0RD AEROSP-, AERONUTRONIC ord Aerospace & , r~ - H W i~ J>eT B 3t.fc.7330 G000M5G S PHIO O TO M IXER/ ‘ ^ » ^^C o m m u n icatio n s Corporation D PHOTODETECTOR SILICON DIODES ; /j^ Ë L E O T R O - O P T IC A L ÏD E V IC E S
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3bb73H0
000D4SD
L4S03
L4S04
L4S06
L4509
L4503/L4504
L4506/L4509
L4503
L4504
ford
b73an
IP2525
L4503
L4506
L4509
B73a
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philco transistors
Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.
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2N252
2N309
2N140
521-6T2
528-6T2
002DIA
SR200
SR500
philco transistors
DS503
2N408
DELCO Radio transistor
philco
westinghouse transistors 163-H72
westinghouse transistors
D3052
2T862
westinghouse DIODES
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Untitled
Abstract: No abstract text available
Text: 2 THIS CO co DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC 00 FX R 1G H T S R E S E RV E D. REV 1SIONS DIST P LTR DESCRIPTION REV PER ECO 08-009600
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AY2008
50CT200
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Untitled
Abstract: No abstract text available
Text: IS Stanford Microdevices Product Description SNA-287 Stanford Microdevices SNA-287 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 15dB of gain and +14dBm of P1dB power when biased at 50mA and 4V.
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SNA-287
14dBm
SNA-200)
SNA-287
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LM 344 IC
Abstract: No abstract text available
Text: SCA-11 Product Description Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This am plifier is internally m atched with typical VSW R of
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SCA-11
19dBm
LM 344 IC
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Untitled
Abstract: No abstract text available
Text: Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.
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SLN-276
SLN-276
10tfejG
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SPF 455
Abstract: No abstract text available
Text: IStanford Mfcrodevieo Product Description SPF-1576 Stanford M icrodevices’ SPF-1576 is a PHEMT gallium arsenide FET housed in a low cost, stripline m ount ceram ic package. These devices are ideal for use as the first stage of ultra low noise cascades operating in the
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SPF-1576
SPF-1576
SPF 455
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Untitled
Abstract: No abstract text available
Text: SCA-13 Product Description Stanford M icrodevices’ SCA-13 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor m ance up to 3 GHz. The heterojunction increases break
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SCA-13
36dBm.
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