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    SEM 2006 samsung

    Abstract: chrysler ccd toyota engineering standard SEM 2006 7segments opto 1010 toyota standard ts NISSAN WHIRLPOOL LED Sign Board Diagram
    Text: AMERICAN AMERICAN OPTOOPTO PLUSPLUS 2010 Company Profile 1206 E. Lexington Ave., Pomona CA 91766 Tel:909 Tel:909-465-0080 465 0080 Fax: 909-465-0130 909 465 0130 www.aopled.com email: info@aopled.com AMERICAN AMERICAN OPTOOPTO PLUSPLUS AMERICAN AMERICAN OPTOOPTO


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    168HRS SEM 2006 samsung chrysler ccd toyota engineering standard SEM 2006 7segments opto 1010 toyota standard ts NISSAN WHIRLPOOL LED Sign Board Diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: Skin ford M i erotleviees Product Description SLN-443 Stanford M icrodevices’ SLN-443 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount SOT-143 plastic package. Hetero­ junction technology is utilized for ultra-linear performance


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    SLN-443 OT-143 PDF

    IM 337

    Abstract: No abstract text available
    Text: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0598 Stanford M icrodevices’ SHF-0598 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost ceram icmount ceram ic package. HFET technology improves breakdown voltage for high drain voltage operation. Its


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    SHF-0598 33dBm 30dBm SHF-0598 360L61] IM 337 PDF

    MN1Y

    Abstract: 10S120
    Text: H Siali ford M icrodevices Product Description SLN-543 Stanford M icrodevices’ SLN-543 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface mount SOT-143 plastic package. Hetero­ junction technology is utilized for ultra-linear performance


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    SLN-543 OT-143 MN1Y 10S120 PDF

    ic LM 386

    Abstract: g1760
    Text: Skin ford M ierotleviees Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth


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    SLN-386 ic LM 386 g1760 PDF

    FET transistors with s-parameters

    Abstract: No abstract text available
    Text: H S iali ford M icro d ev ices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its


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    SHF-0589 33dBm 600mA. SHF-0589 118E3J0QI 10BEL19I FET transistors with s-parameters PDF

    MB522

    Abstract: No abstract text available
    Text: Stati ford M i crudev ices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage|


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    SCA-12 38dBm. 100mW MB522 PDF

    NT 407 F transistor

    Abstract: NT 407 F power transistor SLN-407
    Text: H Siali ford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc­ tion technology is utilized for ultra-linear performance to 2.5


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    SLN-407 SLN-407 NT 407 F transistor NT 407 F power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: H Siali ford M icrodevices Product Description SLN-376 Stanford M icrodevices’ SLN-376 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 70 mil (1.8mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth


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    SLN-376 PDF

    Untitled

    Abstract: No abstract text available
    Text: :fp| Sian ford M ic raclev ices SSW-307 Product Description Stanford M icrodevices’ SSW -307 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-3 GHz Low Cost


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    28dBm. SSW-308 500MHz -45Cto PDF

    Untitled

    Abstract: No abstract text available
    Text: H Siali ford M icrodevices SCA-7 Product Description Stanford M icrodevices’ SCA-7 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ m ance up to 3 GHz. The heterojunction increases break­


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    24dBm. 12dBm PDF

    78s12

    Abstract: No abstract text available
    Text: S tati ford M i cru d ev ices Product Description SCA-14 Stanford M icrodevices’ SC A -14 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases


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    36dBm. 100mW 78s12 PDF

    lm 293 iz 5

    Abstract: T-522A shf0289 t 522
    Text: H Siali ford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ m ance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while minimizing Schottky


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    SHF-0289 30dBm 300mA. lm 293 iz 5 T-522A shf0289 t 522 PDF

    Untitled

    Abstract: No abstract text available
    Text: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current


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    SHF-0187 DC-12 SHF-0187 PDF

    Untitled

    Abstract: No abstract text available
    Text: S tati ford M i cru d ev ices Product Description SHF-0189 Stanford M icrodevices’ SH F-0189 is a high perform ance AIG aAs/G aAs H eterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdow n voltage w hile m inim izing Schottky


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    F-0189 SHF-0189 27dBm 150mA. 4MP-14 PDF

    SHF 205

    Abstract: No abstract text available
    Text: r= c~i S u n iord Miuodk? vices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky


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    SHF-0186 SHF-0186 DC-12 SHF-0186-TR1 SHF-0186-TR2 SHF-0186-TR3 SHF 205 PDF

    ford

    Abstract: b73an IP2525 L4503 L4504 L4506 L4509 l4s03 B73a
    Text: 3 6 6 7 3 2 0 F O R D AEROSP. 97D 004^n A E R Ö N U T R O N IC 17 >F0RD AEROSP-, AERONUTRONIC ord Aerospace & , r~ - H W i~ J>eT B 3t.fc.7330 G000M5G S PHIO O TO M IXER/ ‘ ^ » ^^C o m m u n icatio n s Corporation D PHOTODETECTOR SILICON DIODES ; /j^ Ë L E O T R O - O P T IC A L ÏD E V IC E S


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    3bb73H0 000D4SD L4S03 L4S04 L4S06 L4509 L4503/L4504 L4506/L4509 L4503 L4504 ford b73an IP2525 L4503 L4506 L4509 B73a PDF

    philco transistors

    Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
    Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.


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    2N252 2N309 2N140 521-6T2 528-6T2 002DIA SR200 SR500 philco transistors DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS CO co DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC 00 FX R 1G H T S R E S E RV E D. REV 1SIONS DIST P LTR DESCRIPTION REV PER ECO 08-009600


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    AY2008 50CT200 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS Stanford Microdevices Product Description SNA-287 Stanford Microdevices SNA-287 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 15dB of gain and +14dBm of P1dB power when biased at 50mA and 4V.


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    SNA-287 14dBm SNA-200) SNA-287 PDF

    LM 344 IC

    Abstract: No abstract text available
    Text: SCA-11 Product Description Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This am plifier is internally m atched with typical VSW R of


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    SCA-11 19dBm LM 344 IC PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.


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    SLN-276 SLN-276 10tfejG PDF

    SPF 455

    Abstract: No abstract text available
    Text: IStanford Mfcrodevieo Product Description SPF-1576 Stanford M icrodevices’ SPF-1576 is a PHEMT gallium arsenide FET housed in a low cost, stripline m ount ceram ic package. These devices are ideal for use as the first stage of ultra low noise cascades operating in the


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    SPF-1576 SPF-1576 SPF 455 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCA-13 Product Description Stanford M icrodevices’ SCA-13 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ m ance up to 3 GHz. The heterojunction increases break­


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    SCA-13 36dBm. PDF