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    FPD1 Price and Stock

    C&K EP11FPD1ABE

    SWITCH PUSH SPST-NO 0.4VA 20V
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    DigiKey EP11FPD1ABE Bulk 3,325 1
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    Mouser Electronics EP11FPD1ABE 82
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    C&K EP11FPD1V3BE

    SWITCH PUSH SPST-NO 0.4VA 20V
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    KEMET Corporation ESD-FPD-16-1

    FERRITE CORE CLIP 25.4MM X 2.6MM
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    DigiKey ESD-FPD-16-1 Bulk 458 1
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    TME ESD-FPD-16-1 1
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    KEMET Corporation ESD-FPD-16

    FERRITE CORE CLIP 1PC=FULL ASSY
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    Newark ESD-FPD-16 Bulk 18 1
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    C&K EP11FPD1AVBE

    SWITCH PUSH SPST-NO 0.4VA 20V
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    DigiKey EP11FPD1AVBE Tray 270 1
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    Mouser Electronics EP11FPD1AVBE 152
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    FPD1 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD1 Diodes Diode Zener Single 1V 500MW 2SOD-27 Original PDF
    FPD1 Vishay Diode: 0.8V: Zener Original PDF
    FPD10000AF Filtronic 10w Packaged Power pHEMT Original PDF
    FPD10000V Filtronic 10w Power pHEMT For Wimax Power Amplifiers Original PDF
    FPD1000AS Filtronic 1w Packaged Power pHEMT Original PDF
    FPD1000AS-EB Filtronic 1W PACKAGED POWER PHEMT Original PDF
    FPD1000V Filtronic 1w Power pHEMT Original PDF
    FPD1050 Filtronic 0.75w Power pHEMT Original PDF
    FPD1050SOT89 Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD1050SOT89 Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD1050SOT89E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD1500 Filtronic 1W POWER PHEMT Original PDF
    FPD1500DFN Filtronic Low Noise High Linearity Packaged pHEMTt Original PDF
    FPD1500SOT89 Filtronic Low Noise High Linearity Packaged pHEMTt Original PDF
    FPD1500SOT89CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD1500SOT89E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD1901024 Carlo Gavazzi Central Unit Original PDF
    FPD1901120 Carlo Gavazzi Central Unit Original PDF
    FPD1901220 Carlo Gavazzi Central Unit Original PDF
    FPD1901824 Carlo Gavazzi Central Unit Original PDF

    FPD1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Rogers-4003

    Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
    Text: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS


    Original     		EB1050SOT89-AG FPD1050SOT89 25dBm 36dBm 12dBm FPD1050SOT89; 1050m 30mil LL1608 Rogers-4003 CAPACITOR 33PF rogers 4003 26GHz LNA PDF

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE PDF

    FPD1500SOT89

    Abstract: No abstract text available
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89 FPD1500 PDF

    transistor marking code 1325

    Abstract: R04003 ims pcb filtronic Solid State
    Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State PDF

    FPD1500SOT89

    Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
    Text: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF filtronic Solid State 33id PDF

    SSG 23 TRANSISTOR

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)


    Original     		FPD1500DFN 1850MHZ) 2002/95/EC) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA SSG 23 TRANSISTOR BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors PDF

    FPD1500

    Abstract: MIL-HDBK-263 PAD130
    Text: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an


    Original     		FPD1500 FPD1500 22A114. MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 PAD130 PDF

    FPD1500

    Abstract: MIL-HDBK-263 P100
    Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND


    Original     		FPD1500 FPD1500 MIL-HDBK-263 P100 PDF

    transistor SMD P1f

    Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic PDF

    transistor SMD P2F

    Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
    Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State PDF

    FPD1500SOT89CESR

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263 PDF

    FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263 PDF

    FPD1050SOT89

    Abstract: 20 ohm
    Text: EB1050SOT89BA FPD1050SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 24.5dBm Output Power 17.5dB Gain 0.65dB Noise Figure 36dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS


    Original     		EB1050SOT89BA FPD1050SOT89 85GHz 85GHz 36dBm 10dBm 85GHz. FPD1050SOT89; 1050m 30mil 20 ohm PDF

    eb105

    Abstract: FPD1050SOT89 VG sma
    Text: EB1050SOT89BB FPD1050SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 900MHz 23.0dBm Output Power 22dB Gain 0.6dB Noise Figure 33.5dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS


    Original     		EB1050SOT89BB FPD1050SOT89 900MHz 10dBm FPD1050SOT89; 1050m 30mil LL1608 eb105 VG sma PDF

    FPD1500

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89E FPD1500SOT89 EB1500SOT89AA 120mA. Revised11/11/05 FPD1500 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35 PDF

    FPD1500SOT89CE

    Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD1050 Datasheet v2.2 0.75W POWER PHEMT FEATURES: • • • • • LAYOUT: 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050


    Original     		FPD1050 FPD1050 22A114. MIL-STD-1686 MIL-HDBK-263. PDF

    Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834 PDF

    FPD13R12JY

    Abstract: No abstract text available
    Text: GERMANIUM AVALANCHE PHOTODIODE FPD13R12JY DESCRIPTION The FPD13R12JY is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigrail designed fo r use in a local area network and sub­ scriber loop applications. It is also applicable in a high-bit-rate optical


    OCR Scan     		FPD13R12JY FPD13R12JY 100jum 37MT75b 37MT7Sb PDF

    avalanche photodiode 1550nm sensitivity

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC
    Text: InGaAs AVALANCHE PHOTODIODE FPD15W51RT DESCRIPTION The FPD15W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed for use in optical transmission systems operating at a giga-bit-rate,


    OCR Scan     		FPD15W51RT FPD15W51RT 1550nm. 000SD3D 371H75Î avalanche photodiode 1550nm sensitivity InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC PDF

    FPD13R51JY

    Abstract: low dark current APD
    Text: DESCRIPTION The FPD13R51JY is a germanium avalanche photodiode APD with a multimode fiber pigtail designed for use in a local area network and a subscriber loop application. It is also applicable in a high-bit-rate optical transmission system. The APD chip has a photosensitive area diameter of 50jum and has a


    OCR Scan     		FPD13R51JY 50jum 18/zA 374T7Sfc. QGQ4ci70 low dark current APD PDF

    40G APD chip

    Abstract: Photodiode apd high sensitivity
    Text: InGaAs AVALANCHE PHOTODIODE FPD13W51JW DESCRIPTION The FPD13W51JW is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD w ith a m ultim ode fiber pigtail designed fo r use in optical transmission systems operating at a giga-bit-rate, especially at


    OCR Scan     		FPD13W51JW FPD13W51JW 50jum. 40G APD chip Photodiode apd high sensitivity PDF

    FPD13R51KS

    Abstract: No abstract text available
    Text: DESCRIPTION The FPD13R51KS is a Germanium Avalanche Photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at high-bit-rates and over long distances. The 50Mm photosensitive diameter is optimized to achieve both higher


    OCR Scan     		FPD13R51KS PDF

    FPD15U51JT

    Abstract: InGaAs Photodiode 1550nm 1550NM APD "PhotoDiode" 1550nm avalanche 1550nm photodiode 5 Ghz
    Text: FPD15U51JT a v a la n c h e ph o to m o d e DESCRIPTION The FPD15U51JT is an InGaAs avalanche photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at a high-bit-rate and a long distance. The APD chip has a photosensitive


    OCR Scan     		FPD15U51JT FPD15U51JT 50/xm. 0GGSQ11 InGaAs Photodiode 1550nm 1550NM APD "PhotoDiode" 1550nm avalanche 1550nm photodiode 5 Ghz PDF