Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD3000
FPD30002W
47mmx0
FPD3000
mx3000Î
12GHz
42dBm
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FPD3000
Abstract: MIL-HDBK-263
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD3000
FPD30002W
FPD3000
25mx3000m
12GHz
42dBm
FPD3000-000
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD3000
FPD30002W
FPD3000
mx3000Î
12GHz
42dBm
FPD3000-000
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Untitled
Abstract: No abstract text available
Text: FPD3000 2W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is
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FPD3000
FPD3000
22A114.
MIL-STD-1686
MIL-HDBK-263.
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FPD3000
Abstract: transistor A114
Text: FPD3000 Datasheet v3.0 2W POWER PHEMT LAYOUT: FEATURES: • • • • • 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is
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FPD3000
FPD3000
22-A114.
MIL-STD-1686
MILHDBK-263.
transistor A114
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FPD3000
Abstract: MIL-HDBK-263 P100 Au Sn eutectic
Text: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)
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FPD3000
FPD3000
MIL-HDBK-263
P100
Au Sn eutectic
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VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
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RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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