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    FPD750 Price and Stock

    Filtronic plc FPD750SOT89

    MESFET/TempFET/HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD750SOT89 1,761
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
    		Buy Now

    Filtronic plc FPD750SOT343E

    Si, N-CHANNEL, RF POWER, HEMFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD750SOT343E 17
    • 1 $6
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
    		Buy Now

    FPD750 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD750 Filtronic 0.5w Power pHEMT Original PDF
    FPD750DFN Filtronic Low Noise High Linearity Packaged pHEMTt Original PDF
    FPD750P100 Filtronic 0.5w Packaged Power pHEMT Original PDF
    FPD750SOT343 Filtronic Low Noise High Linearity Packaged pHEMT Original PDF
    FPD750SOT343CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD750SOT343E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD750SOT89 Filtronic Low Noise High Linearity Packaged pHEMT Original PDF
    FPD750SOT89CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD750SOT89E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF

    FPD750 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E

    2.4GHz amplifier schematic

    Abstract: FPD750SOT89 EB750SOT89BG 26GHz LNA
    Text: EB750SOT89BG FPD750SOT89 2.4GHz to 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.4 24.3 15.4 0.95 34.0 2.5 24.3 15.2 0.95 35.0 5V, 100mA 2.6 24.4 15.0 1.0 34.0 DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB750SOT89BG FPD750SOT89 100mA FPD750SOT89; 30mil 31mil 2.4GHz amplifier schematic EB750SOT89BG 26GHz LNA

    FPD750SOT89

    Abstract: No abstract text available
    Text: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively


    Original     		PDF EB750SOT89BA FPD750SOT89 85GHz 24dBm 35dBm 10dBm 100mA 85GHz. FPD750SOT89. 30mil

    noise parameter FPD750 0.5w power phemt

    Abstract: FPD750 MIL-HDBK-263 P100
    Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE


    Original     		PDF FPD750 FPD750 noise parameter FPD750 0.5w power phemt MIL-HDBK-263 P100

    Untitled

    Abstract: No abstract text available
    Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing


    Original     		PDF FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ

    Untitled

    Abstract: No abstract text available
    Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE


    Original     		PDF FPD750 FPD750

    Untitled

    Abstract: No abstract text available
    Text: FPD750 Datasheet v2.4 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750


    Original     		PDF FPD750 FPD750 OT343 22A114. MIL-STD-1686 MIL-HDBK-263.

    Transistor BC 1078

    Abstract: stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E TL11 TL13
    Text: FPD750SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 FPD750SOT89E EB750SOT89 Transistor BC 1078 stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89E TL11 TL13

    Transistor BC 1078

    Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD750SOT89E FPD750SOT89 FPD750SOT89CE 25mx1500m FPD750SOT89CE: FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR Transistor BC 1078 FPD750SOT89 FPD750SOT89E S 8550 transistor BC 1078 transistor

    FPD750

    Abstract: transistor A114
    Text: FPD750 Datasheet v3.0 0.5W POWER PHEMT FEATURES: • • • • • LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750


    Original     		PDF FPD750 FPD750 OT343all 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114

    PMX15

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm


    Original     		PDF FPD750SOT89 FPD750SOT89E FPD750SOT89CE Pmx1500 FPD750SOT89ESR FPD750SOT89EE FPD750SOT89EPCK FPD750SOT89EPCK-411 FPD750SOT89EPCK-412 FPD750SOT89ESQ PMX15

    FPD3000P100

    Abstract: FPD750P100
    Text: FPD750P100 0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor


    Original     		PDF FPD750P100 FPD750P100 FPD3000P100

    microstrip

    Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
    Text: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB750SOT89AH FPD750SOT89 22dBm 40dBm 11dBm 100mA FPD750SOT89. microstrip Transistor Z14 RO4003 w20220 microstrip board

    FPD1500DFN

    Abstract: FPD750DFN FPD750SOT89
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		PDF FPD750DFN FPD750DFN mx750 24dBm 85GHz 39dBm 85GHz) EB750DFN-BA FPD1500DFN FPD750SOT89

    high power transistor s-parameters

    Abstract: No abstract text available
    Text: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD750SOT343 1850MHZ) 2002/95/EC) FPD750SOT343 EB750SOT343-BB EB750SOT343-BA EB750SOT343-BC 22-A114. EB750SOT343-BE EB750SOT343-BG high power transistor s-parameters

    fpd750sot89e

    Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD750SOT89 FPD750SOT89E FPD750SOT89CE mx1500 25dBm 39dBm FPD750SOT89CE: FPD750SOT89E FPD750SOT89PCK Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122

    FPD750SOT343E

    Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201
    Text: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD750SOT343E FPD750SOT34 OT343 1850MHz) 2002/95/EC) 20dBm 37dBm FPD750SOT343CE mx750 FPD750SOT343E FPD750 FPD750SOT343 0402CS toko 1201

    2S110

    Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
    Text: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 2S110 transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89E

    Untitled

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD750SOT89E FPD750SOT89 FPD750SOT89CE mx1500ï 25dBm FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR

    FPD750SOT89

    Abstract: No abstract text available
    Text: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB750SOT89BB FPD750SOT89 34dBm 10dBm 100mA, FPD750SOT89; 30mil LL1608

    FPD750SOT89

    Abstract: 2.2GHz FPD750
    Text: EB750SOT89BC FPD750SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz 1.85 2.0 2.2 P1dB (dBm) 20.0 20.0 23.0 SSG (dB) 17.0 16.5 16.0 N.F. (dB) 0.7 0.7 0.75 OIP3 (dBm)* 33.5 33.7 34.5 Bias 5V, 50mA *measured with two tones 5MHz apart and Pout = 9.0dBm per tone


    Original     		PDF EB750SOT89BC FPD750SOT89 FPD750SOT89. 24dBm 85GHz 100mA. 31mil 2.2GHz FPD750

    ro4003

    Abstract: 802.11a Amplifier roger rogers FPD750SOT89
    Text: EB750SOT89AJ FPD750SOT89 5.6GHz PA EVALUATION BOARD FEATURES • • • • ¥ 24dBm P1dB 11.5dB Gain 1.5dB Noise Figure -46dBc IMD @ 12dBm Pout per Tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It has a distributed


    Original     		PDF EB750SOT89AJ FPD750SOT89 24dBm -46dBc 12dBm 100mA 15GHz 85GHz. FPD750SOT89; 20mil ro4003 802.11a Amplifier roger rogers

    FPD750

    Abstract: FPD750SOT89 FPD750SOT89E MIL-HDBK-263 0.15 um pHEMT transistor
    Text: FPD750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 25 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 0.6 dB Noise Figure ♦ 39 dBm Output IP3 ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD750SOT89E


    Original     		PDF FPD750SOT89 FPD750SOT89E FPD750SOT89 FPD750 FPD750SOT89E MIL-HDBK-263 0.15 um pHEMT transistor

    stepper

    Abstract: TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263
    Text: FPD750DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency


    Original     		PDF FPD750DFN 1850MHZ) FPD750DFN MIL-STD-1686 MIL-HDBK-263. EB750DFN-BB 900MHz EB750DFN-BA 85GHz stepper TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750SOT89 MIL-HDBK-263