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    FPD750SOT89 Search Results

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    FPD750SOT89 Price and Stock

    Filtronic plc FPD750SOT89

    Si, N-CHANNEL, RF POWER, HEMFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FPD750SOT89 1,761
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
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    FPD750SOT89 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD750SOT89 Filtronic Low Noise High Linearity Packaged pHEMT Original PDF
    FPD750SOT89CE Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF
    FPD750SOT89E Filtronic LOW NOISE HIGH LINEARITY PACKAGED PHEMT Original PDF

    FPD750SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E PDF

    2.4GHz amplifier schematic

    Abstract: FPD750SOT89 EB750SOT89BG 26GHz LNA
    Text: EB750SOT89BG FPD750SOT89 2.4GHz to 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.4 24.3 15.4 0.95 34.0 2.5 24.3 15.2 0.95 35.0 5V, 100mA 2.6 24.4 15.0 1.0 34.0 DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB750SOT89BG FPD750SOT89 100mA FPD750SOT89; 30mil 31mil 2.4GHz amplifier schematic EB750SOT89BG 26GHz LNA PDF

    FPD750SOT89

    Abstract: No abstract text available
    Text: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively


    Original     		EB750SOT89BA FPD750SOT89 85GHz 24dBm 35dBm 10dBm 100mA 85GHz. FPD750SOT89. 30mil PDF

    Transistor BC 1078

    Abstract: stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E TL11 TL13
    Text: FPD750SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 FPD750SOT89E EB750SOT89 Transistor BC 1078 stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89E TL11 TL13 PDF

    Transistor BC 1078

    Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		FPD750SOT89E FPD750SOT89 FPD750SOT89CE 25mx1500m FPD750SOT89CE: FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR Transistor BC 1078 FPD750SOT89 FPD750SOT89E S 8550 transistor BC 1078 transistor PDF

    PMX15

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm


    Original     		FPD750SOT89 FPD750SOT89E FPD750SOT89CE Pmx1500 FPD750SOT89ESR FPD750SOT89EE FPD750SOT89EPCK FPD750SOT89EPCK-411 FPD750SOT89EPCK-412 FPD750SOT89ESQ PMX15 PDF

    microstrip

    Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
    Text: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB750SOT89AH FPD750SOT89 22dBm 40dBm 11dBm 100mA FPD750SOT89. microstrip Transistor Z14 RO4003 w20220 microstrip board PDF

    fpd750sot89e

    Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		FPD750SOT89 FPD750SOT89E FPD750SOT89CE mx1500 25dBm 39dBm FPD750SOT89CE: FPD750SOT89E FPD750SOT89PCK Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122 PDF

    2S110

    Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
    Text: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 2S110 transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89E PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		FPD750SOT89E FPD750SOT89 FPD750SOT89CE mx1500ï 25dBm FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR PDF

    FPD750SOT89

    Abstract: No abstract text available
    Text: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB750SOT89BB FPD750SOT89 34dBm 10dBm 100mA, FPD750SOT89; 30mil LL1608 PDF

    FPD750SOT89

    Abstract: 2.2GHz FPD750
    Text: EB750SOT89BC FPD750SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz 1.85 2.0 2.2 P1dB (dBm) 20.0 20.0 23.0 SSG (dB) 17.0 16.5 16.0 N.F. (dB) 0.7 0.7 0.75 OIP3 (dBm)* 33.5 33.7 34.5 Bias 5V, 50mA *measured with two tones 5MHz apart and Pout = 9.0dBm per tone


    Original     		EB750SOT89BC FPD750SOT89 FPD750SOT89. 24dBm 85GHz 100mA. 31mil 2.2GHz FPD750 PDF

    ro4003

    Abstract: 802.11a Amplifier roger rogers FPD750SOT89
    Text: EB750SOT89AJ FPD750SOT89 5.6GHz PA EVALUATION BOARD FEATURES • • • • ¥ 24dBm P1dB 11.5dB Gain 1.5dB Noise Figure -46dBc IMD @ 12dBm Pout per Tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It has a distributed


    Original     		EB750SOT89AJ FPD750SOT89 24dBm -46dBc 12dBm 100mA 15GHz 85GHz. FPD750SOT89; 20mil ro4003 802.11a Amplifier roger rogers PDF

    FPD750

    Abstract: FPD750SOT89 FPD750SOT89E MIL-HDBK-263 0.15 um pHEMT transistor
    Text: FPD750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 25 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 0.6 dB Noise Figure ♦ 39 dBm Output IP3 ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD750SOT89E


    Original     		FPD750SOT89 FPD750SOT89E FPD750SOT89 FPD750 FPD750SOT89E MIL-HDBK-263 0.15 um pHEMT transistor PDF

    transistor bc 647

    Abstract: No abstract text available
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD750SOT89 25dBm 39dBm FPD750SOT89 mx1500Î FPD750SOT89E: FPD750SOT89E FPD750SOT89CE EB750SOT89CE-BC transistor bc 647 PDF

    Transistor BC 1078

    Abstract: FPD750SOT89CE FPD750SOT89 TRANSISTOR 8550, SOT89
    Text: FPD750SOT89CE FPD750SOT89 CE Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		FPD750SOT89CE FPD750SOT89 25dBm 39dBm FPD750SOT89CE 25mx1500m FPD750SOT89CE: EB750SOT89CE-BC FPD750SOT89CESR Transistor BC 1078 FPD750SOT89 TRANSISTOR 8550, SOT89 PDF

    Transistor BC 1078

    Abstract: 2S110 FPD750SOT89 FPD750SOT89E transistor bc 647
    Text: FPD750SOT89 Datasheet 3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 Transistor BC 1078 2S110 FPD750SOT89E transistor bc 647 PDF

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE PDF

    SSG 23 TRANSISTOR

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)


    Original     		FPD1500DFN 1850MHZ) 2002/95/EC) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA SSG 23 TRANSISTOR BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors PDF

    FPD1500DFN

    Abstract: FPD750DFN FPD750SOT89
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD750DFN FPD750DFN mx750 24dBm 85GHz 39dBm 85GHz) EB750DFN-BA FPD1500DFN FPD750SOT89 PDF

    high power transistor s-parameters

    Abstract: No abstract text available
    Text: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)


    Original     		FPD750SOT343 1850MHZ) 2002/95/EC) FPD750SOT343 EB750SOT343-BB EB750SOT343-BA EB750SOT343-BC 22-A114. EB750SOT343-BE EB750SOT343-BG high power transistor s-parameters PDF

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original     		PDF

    FILTRONIC CROSS REFERENCE

    Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant


    Original     		FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB MIL-HDBK-263 Filtronic Compound Semiconductors PDF

    stepper

    Abstract: TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263
    Text: FPD750DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency


    Original     		FPD750DFN 1850MHZ) FPD750DFN MIL-STD-1686 MIL-HDBK-263. EB750DFN-BB 900MHz EB750DFN-BA 85GHz stepper TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750SOT89 MIL-HDBK-263 PDF