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Catalog Datasheet	MFG & Type	Document Tags	PDF
foto transistor Abstract: Q62702-P1614 Q62702-P1610 Q62702-P1611 Q62702-P1615 Q62702-P1638 Q62702-P1639 SFH325FA Text: SFH 325 SFH 325 FA SFH 325 SFH 325 FA fplf6867 fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale	Original	fplf6867 fpl06867 IPCE/IPCE25o foto transistor Q62702-P1614 Q62702-P1610 Q62702-P1611 Q62702-P1615 Q62702-P1638 Q62702-P1639 SFH325FA	PDF
Q62702-P0330 Abstract: No abstract text available Text: SFH 420 SFH 425 fpl06724 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package SFH 420 TOPLED fpl06867 SFH 425 SIDELED Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale	Original	fpl06724 fpl06867 Q62702-P0330	PDF
Q62702-P1610 Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 Text: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1	Original	fpl06867 fplf6867 OHF01530 IPCE/IPCE25o OHF01528 OHF01524 Q62702-P1610 Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639	PDF
Q62702-P1055 Abstract: GPL06880 GPL06724 Q62703-P0331 Text: 3.0 2.6 2.3 2.1 2.1 1.7 3.7 3.3 0.9 0.7 1.1 0.5 3.4 3.0 2.4 0.1 typ SFH 421 SFH 426 fpl06724 GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g	Original	fpl06724 GPL06724 GPL06880 fpl06867 103ff. 169ff. OHR00886 Q62702-P1055 GPL06880 GPL06724 Q62703-P0331	PDF
Untitled Abstract: No abstract text available Text: Opto Semiconductors 3.0 2.6 2.3 2.1 SFH 4200 SFH 4205 fpl06724 Schnelle GaAs-IR-Lumineszenzdiode 950 nm High-Speed GaAs Infrared Emitter (950 nm) 2.1 1.7 0.9 0.7 1.1 0.5 3.7 3.3 3.4 3.0 2.4 0.1 (typ) 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector	Original	fpl06724 fpl06867 OHF00784 OHL01660	PDF
GPL06724 Abstract: GPL06880 Q62702-P0330 Q62702-P1690 Text: 3.0 2.6 2.3 2.1 2.1 1.7 0.1 typ 0.9 0.7 1.1 0.5 3.7 3.3 2.4 3.4 3.0 SFH 420 SFH 425 fpl06724 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g	Original	fpl06724 GPL06724 GPL06880 fpl06867 103ff. 169ff. OHR00860 GPL06724 GPL06880 Q62702-P0330 Q62702-P1690	PDF
GPL06724 Abstract: GPL06880 Text: Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 2.1 1.7 0.9 0.7 0.8 0.6 Cathode/Collector marking fpl06724 1.1 0.5 3.7 3.3 3.4 3.0 2.4 0.1 typ 0.18 0.6 0.12 0.4	Original	fpl06724 GPL06724 GPL06880 fpl06867 OHF00362 OHL01660 OHF00360 GPL06724 GPL06880	PDF