foto transistor
Abstract: Q62702-P1614 Q62702-P1610 Q62702-P1611 Q62702-P1615 Q62702-P1638 Q62702-P1639 SFH325FA
Text: SFH 325 SFH 325 FA SFH 325 SFH 325 FA fplf6867 fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale
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Original
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PDF
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fplf6867
fpl06867
IPCE/IPCE25o
foto transistor
Q62702-P1614
Q62702-P1610
Q62702-P1611
Q62702-P1615
Q62702-P1638
Q62702-P1639
SFH325FA
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Q62702-P0330
Abstract: No abstract text available
Text: SFH 420 SFH 425 fpl06724 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package SFH 420 TOPLED fpl06867 SFH 425 SIDELED Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale
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Original
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PDF
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fpl06724
fpl06867
Q62702-P0330
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Q62702-P1610
Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
Text: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1
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Original
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PDF
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fpl06867
fplf6867
OHF01530
IPCE/IPCE25o
OHF01528
OHF01524
Q62702-P1610
Q62702-P1611
Q62702-P1614
Q62702-P1615
Q62702-P1638
Q62702-P1639
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Q62702-P1055
Abstract: GPL06880 GPL06724 Q62703-P0331
Text: 3.0 2.6 2.3 2.1 2.1 1.7 3.7 3.3 0.9 0.7 1.1 0.5 3.4 3.0 2.4 0.1 typ SFH 421 SFH 426 fpl06724 GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g
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Original
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PDF
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fpl06724
GPL06724
GPL06880
fpl06867
103ff.
169ff.
OHR00886
Q62702-P1055
GPL06880
GPL06724
Q62703-P0331
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors 3.0 2.6 2.3 2.1 SFH 4200 SFH 4205 fpl06724 Schnelle GaAs-IR-Lumineszenzdiode 950 nm High-Speed GaAs Infrared Emitter (950 nm) 2.1 1.7 0.9 0.7 1.1 0.5 3.7 3.3 3.4 3.0 2.4 0.1 (typ) 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector
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Original
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PDF
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fpl06724
fpl06867
OHF00784
OHL01660
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GPL06724
Abstract: GPL06880 Q62702-P0330 Q62702-P1690
Text: 3.0 2.6 2.3 2.1 2.1 1.7 0.1 typ 0.9 0.7 1.1 0.5 3.7 3.3 2.4 3.4 3.0 SFH 420 SFH 425 fpl06724 GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package 0.8 0.6 Cathode/Collector marking 0.18 0.6 0.12 0.4 Cathode/Collector Approx. weight 0.03 g
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Original
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PDF
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fpl06724
GPL06724
GPL06880
fpl06867
103ff.
169ff.
OHR00860
GPL06724
GPL06880
Q62702-P0330
Q62702-P1690
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GPL06724
Abstract: GPL06880
Text: Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 3.0 2.6 2.3 2.1 2.1 1.7 0.9 0.7 0.8 0.6 Cathode/Collector marking fpl06724 1.1 0.5 3.7 3.3 3.4 3.0 2.4 0.1 typ 0.18 0.6 0.12 0.4
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Original
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PDF
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fpl06724
GPL06724
GPL06880
fpl06867
OHF00362
OHL01660
OHF00360
GPL06724
GPL06880
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