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    FQD11P06 Search Results

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    FQD11P06 Price and Stock

    onsemi FQD11P06TM

    MOSFET P-CH 60V 9.4A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQD11P06TM Cut Tape 5,264 1
    • 1 $1.67
    • 10 $1.061
    • 100 $1.67
    • 1000 $0.5107
    • 10000 $0.5107
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    FQD11P06TM Digi-Reel 5,264 1
    • 1 $1.67
    • 10 $1.061
    • 100 $1.67
    • 1000 $0.5107
    • 10000 $0.5107
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    FQD11P06TM Reel 5,200 2,500
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    • 10000 $0.45828
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    Avnet Americas FQD11P06TM Reel 16 Weeks 2,500
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    • 10000 $0.39071
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    FQD11P06TM Reel 2,500
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    • 10000 $0.39071
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    Mouser Electronics FQD11P06TM 19,963
    • 1 $1.49
    • 10 $0.971
    • 100 $0.665
    • 1000 $0.488
    • 10000 $0.469
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    Newark FQD11P06TM Cut Tape 21,109 5
    • 1 $1.43
    • 10 $1.13
    • 100 $0.816
    • 1000 $0.668
    • 10000 $0.668
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    FQD11P06TM Reel 2,500
    • 1 -
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    • 10000 $0.509
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    RS FQD11P06TM Bulk 2 Weeks 5
    • 1 -
    • 10 $1.16
    • 100 $1.16
    • 1000 $1.16
    • 10000 $1.16
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    Onlinecomponents.com FQD11P06TM 5,000
    • 1 -
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    • 10000 $0.3884
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    TME FQD11P06TM 1,359 1
    • 1 $1.232
    • 10 $0.83
    • 100 $0.58
    • 1000 $0.556
    • 10000 $0.556
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    NexGen Digital FQD11P06TM 2
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    Richardson RFPD FQD11P06TM 2,500
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    • 10000 $0.41
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    Avnet Asia FQD11P06TM 16 Weeks 2,500
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    • 10000 $0.42623
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    Avnet Silica FQD11P06TM 17 Weeks 2,500
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    EBV Elektronik FQD11P06TM 18 Weeks 2,500
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    Master Electronics FQD11P06TM 5,000
    • 1 -
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    • 10000 $0.3884
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    New Advantage Corporation FQD11P06TM 292 1
    • 1 -
    • 10 $6.9
    • 100 $6.9
    • 1000 $6.9
    • 10000 $6.9
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    onsemi FQD11P06TF

    MOSFET P-CH 60V 9.4A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQD11P06TF Reel 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.39807
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    Aptina Imaging FQD11P06TM

    Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical FQD11P06TM 5,000 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.4709
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    Fairchild Semiconductor Corporation FQD11P06TF

    9.4 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FQD11P06TF 1,392
    • 1 $3.92
    • 10 $3.92
    • 100 $3.92
    • 1000 $1.47
    • 10000 $1.47
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    Fairchild Semiconductor Corporation FQD11P06TM

    P-CHANNEL QFET MOSFET Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FQD11P06TM 42
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    Win Source Electronics FQD11P06TM 7,500
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    • 100 $1.018
    • 1000 $0.679
    • 10000 $0.679
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    Find more FQD11P06 price and stock on Findchips.com

    FQD11P06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD11P06 Fairchild Semiconductor 60 V P-Channel MOSFET Original PDF
    FQD11P06 Fairchild Semiconductor 60V P-Channel MOSFET Original PDF
    FQD11P06TF Fairchild Semiconductor 60V P-Channel QFET Original PDF
    FQD11P06TM Fairchild Semiconductor 60V P-Channel QFET Original PDF
    FQD11P06TM_SB82077 Fairchild Semiconductor 60V P-Channel QFET Original PDF

    FQD11P06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQU11P06

    FQU11P06TU

    Abstract: No abstract text available
    Text: QFET TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQU11P06 FQU11P06TU O-251 FQU11P06TU

    Untitled

    Abstract: No abstract text available
    Text: FQD11P06 P-Channel QFET MOSFET -60 V, -9.4 A, 185 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQD11P06

    FQU11P06

    Abstract: FQD11P06
    Text: FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQU11P06

    FQU11P06

    Abstract: No abstract text available
    Text: FQD11P06 / FQU11P06 P-Channel QFET MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD11P06 FQU11P06 FQU11P06

    FQD11P06

    Abstract: FQU11P06 mosfet b4
    Text: TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQU11P06 mosfet b4

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQD11P06TF FQD11P06TM O-252

    FQU11P06 equivalent

    Abstract: fqu11p06 FAIRCHILD FQD DPAK Fqu11p06 N FQD11P06
    Text: QFET TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQU11P06 equivalent fqu11p06 FAIRCHILD FQD DPAK Fqu11p06 N

    Untitled

    Abstract: No abstract text available
    Text: FQD11P06 / FQU11P06 May 2000 QFET TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06

    11p06

    Abstract: FQU11P06
    Text: FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQD11P06TF FQD11P06TM SB82077 11p06 FQU11P06

    Untitled

    Abstract: No abstract text available
    Text: FQD11P06 / FQU11P06 P-Channel QFET MOSFET -60 V, -9.4 A, 185 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQD11P06 FQU11P06

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06

    FAIRCHILD FQD DPAK

    Abstract: FQU11P06 equivalent FQD11P06 FQU11P06
    Text: QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FAIRCHILD FQD DPAK FQU11P06 equivalent FQU11P06

    FQU11P06 equivalent

    Abstract: FQD11P06 FQU11P06
    Text: QFET TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD11P06 FQU11P06 FQU11P06 equivalent FQU11P06

    mosfet D403

    Abstract: D403 mosfet D404 mosfet U401B q406 BLM41PG600SN1L 10UF-50V 74HC4066 C4161 U403B
    Text: 1 2 3 4 5 SHUNT_CON_2,54 SHUNT_CON_2,54 JS400 JS402 1 PGND VBAT- G C433 2 1 LOAD_MINUS_ON GND 2 12 5 GND GND R401 R403 10K0_0603_0.1% 1 2 R405 R407 30K0_0603_0.1% 1 2 100N_16V_X7R PGND PGND PGND 150K 150K 10K 1 R425 2 1 R417 2 V_BUCK_IN_B 150K 10K 1 R424 2 1 R416 2 V_BUCK_IN_A


    Original     		PDF JS400 JS402 U402D 74HC4066 16-Jan-2007 A0501 U401E 1TP401 1TP400 mosfet D403 D403 mosfet D404 mosfet U401B q406 BLM41PG600SN1L 10UF-50V 74HC4066 C4161 U403B

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    d1071

    Abstract: U106B lmv3581 D1062 LM317LM U106A C1152 EL17-21UBC Q102B 1uf63v
    Text: 1 2 3 4 5 6 8 7 Battery UPS switch V_BAT_+ V_BAT_+ 2 R104 1 1 C119 1 2 VCC D108 BAT54S GND V3P3 1 0R 22N_50V_X7R 1 3 C120 2 3 1UF_16V_X7R_0805 2 GND GND GND plane connections GND VREFT AREF_X61 AREF_X61 GND GND ADC_AREF_X61 1 R142 2 GND 10K 1 R114 2 10K 1 R115 2


    Original     		PDF BAT54S EL17-21SYGC 1TP106 TP112 TP111 1TP101 SM6T68CA 1TP100 STPS1045B FQD11P06 d1071 U106B lmv3581 D1062 LM317LM U106A C1152 EL17-21UBC Q102B 1uf63v

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08