pfv218n50
Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V
|
Original
|
FQP18N50V2/FQPF18N50V2
FQP18N50V2/FQPF18N50V2
factTO-220F
FQPF18N50V2
O-220F-3
FQPF18N50V2SDTU
pfv218n50
PV218N50
18N50V2
PV2-18N50
pfv218
FQPF18N50
FQP18N50V2
18N50
pfv2
|
PDF
|
9N25C
Abstract: FQPF9N25CT
Text: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQP9N25C/FQPF9N25C
FQPF9N25C
FQPF9N25CT
9N25C
|
PDF
|
FQPF20N06L
Abstract: No abstract text available
Text: FQPF20N06L April 2000 QFET TM FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF20N06L
FQPF20N06L
|
PDF
|
FQPF20N06L
Abstract: No abstract text available
Text: QFET TM FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF20N06L
FQPF20N06L
|
PDF
|
FQPF11P06
Abstract: No abstract text available
Text: QFET TM FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF11P06
FQPF11P06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET TM FQPF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF65N06
|
PDF
|
FQPF70N08
Abstract: DIODE 436
Text: FQPF70N08 August 2000 QFET TM FQPF70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF70N08
FQPF70N08
DIODE 436
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQP90N10V2/FQPF90N10V2
|
PDF
|
TRANSISTORS 132 GD
Abstract: FQPF22P10
Text: FQPF22P10 April 2000 QFET TM FQPF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF22P10
-100V,
TRANSISTORS 132 GD
FQPF22P10
|
PDF
|
FQPF20N06
Abstract: No abstract text available
Text: QFET TM FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF20N06
FQPF20N06
|
PDF
|
FQPF17N08
Abstract: No abstract text available
Text: QFET TM FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF17N08
FQPF17N08
|
PDF
|
FQPF2P40
Abstract: No abstract text available
Text: QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
|
Original
|
FQPF2P40
-400V,
FQPF2P40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET TM FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF20N06
|
PDF
|
FQPF30N06L
Abstract: No abstract text available
Text: QFET TM FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF30N06L
50ner
FQPF30N06L
|
PDF
|
|
|
FQPF30N06
Abstract: No abstract text available
Text: FQPF30N06 April 2000 QFET TM FQPF30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF30N06
FQPF30N06
|
PDF
|
FQPF7P06
Abstract: No abstract text available
Text: QFET TM FQPF7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF7P06
FQPF7P06
|
PDF
|
FQPF30N06L
Abstract: No abstract text available
Text: FQPF30N06L April 2000 QFET TM FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF30N06L
FQPF30N06L
|
PDF
|
FQPF17P06
Abstract: No abstract text available
Text: QFET TM FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF17P06
FQPF17P06
|
PDF
|
FQPF30N06
Abstract: No abstract text available
Text: QFET TM FQPF30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF30N06
FQPF30N06
|
PDF
|
FQPF26N03L
Abstract: No abstract text available
Text: QFET TM FQPF26N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF26N03L
FQPF26N03L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQPF7P06 September 2000 QFET TM FQPF7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF7P06
|
PDF
|
FQPF11P06
Abstract: No abstract text available
Text: QFET TM FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF11P06
FQPF11P06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQPF11P06 May 2000 QFET TM FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF11P06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET TM FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQPF50N06
|
PDF
|