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    onsemi FQU13N10LTU

    MOSFET N-CH 100V 10A IPAK
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    Fairchild Semiconductor Corporation FQU13N10LTU

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    FQU13N10LTU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU13N10LTU Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A


    Original     		PDF FQD13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD13N10L FQU13N10L FQU13N10L FQU13N10LTU O-251

    Untitled

    Abstract: No abstract text available
    Text: FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A planar stripe and DMOS technology. This advanced


    Original     		PDF FQU13N10L