FR152

Abstract: FR153 FR154 FR155 FR156 FR157 FR201 FR202 FR203 FR204
Contextual Info: RECTIFIER DIODES, Fast Recovery, Plastic Package S t P a rt Number M axim um A v e ra g e Rectified Current at T, (A m p s i i i i i FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 FR201 FR202 FR 203 FR 204 FR 205 FR206 FR207 FR301 FR302 FR303 FR304 FR305

LW 6052

Contextual Info: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ RCD’s FR series was designed to obtain the best from two devices. It combines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.

SP6355

Abstract: DO213
Contextual Info: Zener Regulator Diodes 1N6028C 1N602SD 1N5276A 1N5276A D 07 1N5276B 1N5276B (D07) MLL5276B 1N6353 SP6353 1N6029A 1N6029B 1N6029C 1N6029D 1N5277A 1N5277A {D07} 1N5277B 1N5277B (D07) MLL5277B 1N5278A 1N5278A (D07) 1N5278B 1N5278B (D07) MLL5278B 1N6354 SP6354

89/WK 6052

Contextual Info: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • Precision performance ■ Intrinsically safe - ceramic substrate and ceramic shell result in completely flameproof design per UL and EIA ■ Fusing-to-Operating current ratios as low as 3:11

Contextual Info: 74ôb3Hb □□□□ÔMb TTfl FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • Precision performance ■ Intrinsically safe - ceramic substrate and ceramic shell result in completely flameproof design per UL and EIA

A6 sot23

Contextual Info: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com

diode bas32

Contextual Info: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.

FR 151 diode

Abstract: 155p A-405 FR157
Contextual Info: LESHAN RADIO COMPANY, LTD. FR151 thru FR157 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 50 to 1000V Forward Current 1.5A Flammability Classification 94V-0 * High temperature metallurgically bonded construction

LW - 6052

Abstract: LW 6052
Contextual Info: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ RCD's FR series was designed to obtain the best from two devices. It combines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.

ESAD39M

Abstract: esad39 A153
Contextual Info: ESAD39M C,N,D (ioa) FA ST RECOVERY DIODE : Features Insulated package by fully m olding • x>r Super high speed sw itchin g. •9— Low VF in turn on • X fltffitt Connection Diagram High reliability or2) ESAD39M-DDC D o -►] - I ESAD39M-DDN 00 ESAD39M-DDD

FZJ 125

Abstract: FZJ 105 BYW51 BYW51F-200 T0220AB
Contextual Info: r z t S G S -m 0 M S 0 N _ BYW51 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

BYW51F-200

Abstract: T0220AB BYW51 BYW51-200
Contextual Info: SGS-THOMSON BYW51 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AB): Insulating voltage = 2000 V DC

E2P102

Contextual Info: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive

Contextual Info: Philips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55 QUICK REFERENCE DATA SYMBOL

Contextual Info: MITSUBISHI DISCRETE SC blE D m 001442? flDfl • MITS OPTOELECTRONICS CATV Application (Revised) » ♦» M IT S U B IS H I FU-45SDF-36 ELEC TR O N IC DEVICE GROUP 1.3 |jm DFB-LD Module with Singlemode Fiber Pigtail FEA TUR ES ■ Distributed Feedback (DFB) laser diode

in5242

Abstract: IN5234 IN5226 IN5244 in5246 IN5224 diode IN5226 in5242 zener diode IN5240 1N5221
Contextual Info: Microsemi Corp. * $ Thp d'Ode experts / SCOTTSDALE, A 7 1N5221 thru 1N5281 DO-35 F o r m ore in fo r m a tio n call: 602 9 4I-6300 FEATURES SILICON • 2.4 TH R U 200 V O LTS 500 m W ZENER DIODES • C O M PA C T P A C K A G E • C O N S U LT FA C T O R Y FOR V O LTA G ES AB O V E 200 V

945B

Abstract: 955B
Contextual Info: 1SMB5913BT3 Series Preferred Device 3 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 3 Watt Zener diodes offers the following advantages. Specification Features • • • • • Zener Voltage Range − 3.3 V to 200 V ESD Rating of Class 3 >16 kV per Human Body Model

SS850

Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MFOD3100 Fiber O ptics — M O D Fam ily Photo D etector Diode Output M O O FAM ILY FIBER O PTICS PHO TO D ETECTO R DIODE O U T P U T . . . d e s ig n e d fo r lo w c o s t in fr a r e d r a d ia t io n d e te c t io n in h ig h f r e q u e n c y F ib e r O p t ic s S y s ­

1N735

Abstract: E 435 E
Contextual Info: Microsemi Zener Regulator Diodes JAN TX1N 4127UR -1 JAN TXV1N 4127 JANTXV1N4127-1 JAN TXV1N 4127UR -1 1N4128 1N4128 D 0 3 5 JAN 1N4128 JAN 1N4128-1 JAN1N4128UR-1 JA N TX1N 4128 JANTX1N4128-1 J A NTX1N 4128U R-1 JA N TXV1N 4128 J A N TX V 1N 4128-1 JAN TXV1N 4128UR -1

NTMSD2P102R2

Abstract: NTMSD2P102LR2 NTMSD2P102LR2G e2p102
Contextual Info: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive

NTMSD2P102LR2

Contextual Info: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive

1N5917

Abstract: 1NS927
Contextual Info: 1N5913B thru 1N5956B Microsemi Corp. é The d'Ode o oe rrs SCOTTSDALE , A Z For m ore in fo rm a tio n call: ?W 6 02 941-6300 SILICON 1.5 WATT ZENER DIODES FEATURES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E S U R G E S TR ES S ES

Contextual Info: i i ' N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 25E D ^53=131 0022351 7 • BY359F—1500 J T-CZ-17 V FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery

1N53438

Abstract: 1n53668
Contextual Info: ZENER DIODES, 5 WATTS, PLASTIC PACKAGE Zener JEDEC p A rt Voltage * t * r Zener Test S u ffix AS S M axim um b e tte r Im ped* nee fit tj. tmA Suffix A.8.C M axim um Reverse Current at T ^ Z B ^ C M axim um Knee '.•••.'.'.'.wlr ft • Im pedance fit t »1 OmA Ron & A