FR101
Abstract: FR102 FR103 FR104 FR105 FR105P FR106 FR107 FR107P
Text: LESHAN RADIO COMPANY, LTD. FR101– FR107 1A 1A FAST RECOVERY DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV V PK FR101 FR102 FR103 FR104
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FR101
FR107
FR101
FR102
FR103
FR104
FR105
FR105P
FR106
FR101
FR102
FR103
FR104
FR105
FR105P
FR106
FR107
FR107P
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DIODE FR107
Abstract: Diode FR104 FR105 diode FR106-T3 FR10X FR101 FR102 FR103 FR103 diode FR105
Text: FR101 – FR107 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per
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FR101
FR107
DO-41,
MIL-STD-202,
DO-41
DIODE FR107
Diode FR104
FR105 diode
FR106-T3
FR10X
FR101
FR102
FR103
FR103 diode
FR105
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DIODE FR107
Abstract: FR105 diode FR107 diode FR10X FR101 FR102 FR103 FR104 FR105 FR106
Text: FR101 – FR107 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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FR101
FR107
DO-41,
MIL-STD-202,
DO-41
DIODE FR107
FR105 diode
FR107 diode
FR10X
FR101
FR102
FR103
FR104
FR105
FR106
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Untitled
Abstract: No abstract text available
Text: FR101 – FR107 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per
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FR101
FR107
DO-41,
MIL-STD-202,
DO-41
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Diode FR104
Abstract: fr105 FR105 diode DIODE FR107 FR107 FR107 diode FR104 diode
Text: FR101~FR107 1.0A Fast Recovery Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Fast switching speed for high efficiency Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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FR101
FR107
FR102
FR103
FR104
FR105
FR106
FR107
1-Jan-2006
Diode FR104
FR105 diode
DIODE FR107
FR107 diode
FR104 diode
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DIODE fr107
Abstract: No abstract text available
Text: FR101~FR107 1.0A Fast Recovery Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Fast switching speed for high efficiency Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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FR101
FR107
FR101
FR102
FR103
FR104
FR105
FR106
1-Jun-2004
DIODE fr107
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DIODE FR107
Abstract: No abstract text available
Text: Silicon Rectifier Formosa MS FR101 THRU FR107 List List. 1 Package outline. 2 Features. 2
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FR101
FR107
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
DIODE FR107
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Untitled
Abstract: No abstract text available
Text: Formosa MS Axial Leaded Fast Recovery Rectifiers FR101 THRU FR107 List List. 1 Package outline. 2
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FR101
FR107
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
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DO-41
Abstract: No abstract text available
Text: Formosa MS Axial Leaded Fast Recovery Rectifiers FR101 THRU FR107 List List. 1 Package outline. 2
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FR101
FR107
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
DO-41
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Diode FR104
Abstract: FR104 diode
Text: Formosa MS Silicon Rectifier FR101 THRU FR107 List List. 1 Package outline. 2 Features. 2
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FR101
FR107
125oC
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
Diode FR104
FR104 diode
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FR103 diode
Abstract: diode fr103
Text: Formosa MS Silicon Rectifier FR101 THRU FR107 List List. 1 Package outline. 2 Features. 2
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FR101
FR107
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
METHOD-1021
FR103 diode
diode fr103
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Untitled
Abstract: No abstract text available
Text: FR101 - FR107-STR FAST RECOVERY RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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FR101
FR107-STR
DO-41
UL94V-O
MIL-STD-202,
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FR101-FR107
Abstract: No abstract text available
Text: FR101-FR107 Fast Recovery Rectifier Diodes PRV : 50 - 1000 Volts Io : 1.0 Ampere Features * * * * * * DO - 41 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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FR101-FR107
DO-41
UL94V-O
FR101-FR107
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diode FR107 equivalent
Abstract: FR101 FR102 FR103 FR104 FR105 FR106 FR107-STR
Text: FR101 - FR107-STR FAST RECOVERY RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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FR101
FR107-STR
DO-41
UL94V-O
MIL-STD-202,
diode FR107 equivalent
FR102
FR103
FR104
FR105
FR106
FR107-STR
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FR101
Abstract: FR102 FR103 FR104 FR105 FR106 FR107-STR
Text: FR101 - FR107-STR FAST RECOVERY RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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FR101
FR107-STR
DO-41
UL94V-O
MIL-STD-202,
FR102
FR103
FR104
FR105
FR106
FR107-STR
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RGP15G diode
Abstract: Diode FR104 FR105 diode FR104 diode 1n3890 datasheet FR101 FR102 FR103 FR104 FR105
Text: Elite Semiconductor Products | Fast Recovory Diodes Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs
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FR101
FR102
FR103
FR104
D0-203AA
16FL10S10
16FL20S10
16FL40S10
16FL60S10
16FL80S10
RGP15G diode
Diode FR104
FR105 diode
FR104 diode
1n3890 datasheet
FR101
FR102
FR103
FR105
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Untitled
Abstract: No abstract text available
Text: FR101 – FR107 1.0A FAST RECOVERY DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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FR101
FR107
DO-41,
MIL-STD-202,
DO-41
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FR101
Abstract: FR102 RL101F RL102F RL103F RL104F RL105F RL106F RL107F
Text: 3SE J DIODES INC M 2fiMfl?clB 000Q34b 5 BIDIl FAST RECOVERY RECTIFIERS r, OPERATING/STORAGE TEMPERATURE RANGE -65°C to +175°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ T/\ VpK Aa v Maximum Forward Maximum Reverse
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00003Mb
RECOVERY/A-405
RL101F
RL102F
RL103F
RL104F
RL105F
RL106F
RL1FR153
FR154
FR101
FR102
RL107F
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FRI57
Abstract: FRi55 fri07 BAI 59 FRi52 BAI 57 BAi58 FRI53 EiC series BA150
Text: E i e SEUICONDUCTOR INC fe,ÖE D • OQDQOm fl P2 ■ EICS Fast recovery silicon diodes. 1.0 Amp. to 3 Amps. The plastic material carries U /L recognition 94V-0. Type A verage Rectified Current V AV (A) Peak Inverse Voltage V RRM at (°C) Repetitive Peak Forward
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Q000014
BA150
DO-41.
300UJ
150lJ)
FR155
FRI57
FR157-STR
BY290
FRi55
fri07
BAI 59
FRi52
BAI 57
BAi58
FRI53
EiC series
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FR166
Abstract: FR102 FR103 RL101F RL102F RL103F RL104F RL105F RL107F
Text: 2848793 DIODES INCORPORATED 94 D 0 0 2 7 7 D T — O J — /3 FAST RECOVERY RECTIFIERS D E | 2 f l 4 f l 7 c13 D Q D D E 7 7 TYPE 1 o p e r a t i n g a n d s t o r a g e t e m p e r a t u r e -6 5 °c to + i75°c Maximum Fieverse Current @> PRV @25° C T a
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RECOVERY/A-405
RL101F
RL102F
RL103F
RL104F
RL105F
DIF814
DIF816
DIF817
DIF818
FR166
FR102
FR103
RL107F
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RGP10GI
Abstract: 1N50S1 iRL104F 1N5622 FR10r lN4937 1N4245 1N4246 1N4248 1NS062
Text: RECTIFIER DIODES, Standard Recovery, Glass Passivated, Glass Package S i P a rt N um ber M a x im u m A v e ra g e R e c tifie d C u rre n t at T. Peak In v e rs e V oltage I» (A m p s jT , { “ C ) PIV [V o lts ) 1N4245 1N4246 1N4247 1N4248 1N4249 1N5D59
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1N4245
1N4246
11f4247
1N4248
1N4249
1N5D59
1N506Q
1N50S1
1NS062
1N5614
RGP10GI
iRL104F
1N5622
FR10r
lN4937
1NS062
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n539
Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0
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1N4001
1N4002
N4003
1N4004
1N4005
1N400Ó
1N4007
1N5392
1N5393
1N5394
n539
6A10 DIODE
diode 2a05
FRI57
diode 6A10
Diode IN5398
diode k5 10-16
diode 1n5392
N5398
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4E20-8
Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
4E20-8
1N3299
1N3300
1N3300A
1N3303
1N3303A
1N3304
1N3489
1N3489A
1N3490
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fri07
Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
fri07
1n3842
1N3299
1N3836
4e20-3
1N3844
4E20-8
4E50-M-28
1N3300
1N3300A
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