DOD-A-82720
Abstract: FR4 epoxy dielectric constant 4.2 DP-190 DP-100 Plus DP270 DP460 DP-420 3M DP100
Text: 0362220 Epoxy-Hotmelt 3/30/04 11:29 AM Page 1 High-performance adhesives for demanding electronics applications. With the ever-increasing sophistication of electronics, you need the most dependable and versatile methods for their fabrication and assembly. 3M Scotch-Weld epoxies and Jet-melt
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DP-100
DP-125
DP-190
DP-270
DP-420
DP-460
DOD-A-82720
FR4 epoxy dielectric constant 4.2
DP-100 Plus
DP270
DP460
3M DP100
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Nelco 4000-13
Abstract: MEGTRON 6 370HR isola 370HR Nelco 4000-13 si Isola FR406 Rogers 4350B stackup 4000-13EP FR4 Prepreg
Text: PCB Stackup Design Considerations for Altera FPGAs AN-613-1.0 Application Note This application note presents an overview of the PCB stackup construction and material selection criteria. It discusses the important material parameters that influence the electrical
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AN-613-1
Mil-Std-275E)
Nelco 4000-13
MEGTRON 6
370HR
isola 370HR
Nelco 4000-13 si
Isola FR406
Rogers 4350B
stackup
4000-13EP
FR4 Prepreg
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fbga Substrate design guidelines
Abstract: FR4 substrate epoxy dielectric constant 4.4 FR4 substrate with dielectric constant 4.4 relative permittivity of fr4 FR4 epoxy dielectric constant 4.2 FR4 4.9 dielectric constant FR4 epoxy dielectric constant 4.4 FR4 dielectric constant 4.9 FR4 dielectric constant and loss tangent at 2.4 G EP2S15
Text: Section VI. PCB Layout Guidelines This section provides information for board layout designers to successfully layout their boards for Stratix II devices. These chapters contain the required PCB layout guidelines and package specifications. This section contains the following chapters:
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MEGTRON 6
Abstract: AN-672
Text: Transceiver Link Design Guidelines for High-Gbps Data Rate Transmission 2013.02.15 AN-672 Subscribe Feedback As transceiver data rates increase and the unit interval time UI decrease, the end-to-end link design of a transceiver channel becomes increasingly critical to the overall performance of the link. Consider an Altera
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AN-672
100-Gpbs
CEI-25G-LR
CEI-28G-VSR.
CEI-28G-VSR
MEGTRON 6
AN-672
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FR1206
Abstract: FR1206JR YAGEO RC1206 cd 4611 FR0603 resistor 240 RESISTOR FOOTPRINT 1206 YAGEO CHIP RESISTORS MARKING RC0603 YNSC056 FR4 epoxy dielectric constant 4.2
Text: DATA SHEET FUSIBLE CHIP RESISTORS FR series Pb Free 5% Product specification – Sep 26, 2005 V.0 sizes 0603/1206 2 Product specification Chip Resistor Surface Mount FR SERIES 11 0603/1206 (Pb Free) SCOPE This specification describes FR0603/1206 fusible chip resistors with leadfree terminations made by thick film process.
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FR0603/1206
FR1206
FR1206JR
YAGEO RC1206
cd 4611
FR0603
resistor 240
RESISTOR FOOTPRINT 1206
YAGEO CHIP RESISTORS MARKING RC0603
YNSC056
FR4 epoxy dielectric constant 4.2
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TR8M1
Abstract: No abstract text available
Text: TR8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors MICROTAN Low ESR, Leadframeless Molded FEATURES • Lead Pb -free face-down terminations • Mounting: Surface mount • 8 mm tape and reel packaging available per EIA-481 and reeling per IEC 60286-3
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EIA-481
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
TR8M1
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Untitled
Abstract: No abstract text available
Text: TR8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors MICROTAN Low ESR, Leadframeless Molded FEATURES • Lead Pb -free face-down terminations • Mounting: Surface mount • 8 mm tape and reel packaging available per EIA-481 and reeling per IEC 60286-3
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EIA-481
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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50/50/A302 w9
Abstract: TL8A0
Text: TL8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded Low Profile FEATURES • Ultra-low profile: 0.8 mm to 1.0 mm in a variety of case sizes • Highest capacitance-voltage product in industry • Lead Pb -free L-shaped terminations for
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
50/50/A302 w9
TL8A0
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TM8r
Abstract: No abstract text available
Text: TM8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors MICROTAN High Reliability, Low DCL, Leadframeless Molded FEATURES • High reliability solid surface mount tantalum capacitors Available • Low DCL for extended battery life • Small sizes for space constrained applications
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
TM8r
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TL8A0
Abstract: No abstract text available
Text: TL8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded Low Profile FEATURES • Ultra-low profile: 0.8 mm to 1.0 mm in a variety of case sizes • Highest capacitance-voltage product in industry • Lead Pb -free L-shaped terminations for
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
TL8A0
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Untitled
Abstract: No abstract text available
Text: TM8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors MICROTAN High Reliability, Low DCL, Leadframeless Molded FEATURES • High reliability solid surface mount tantalum capacitors Available • Low DCL for extended battery life • Small sizes for space constrained applications
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2222A
Abstract: No abstract text available
Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.
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AT-31625
OT-223
AT-31625
1997H
5965-5911E
2222A
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Untitled
Abstract: No abstract text available
Text: TP8 www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors, MICROTAN , High CV Leadframeless Molded Automotive Grade FEATURES • Highest capacitance-voltage product industry in given case size • Small sizes include 0603 footprint in • Lead Pb -free L-shaped terminations
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AEC-Q200
EIA-481
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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298W
Abstract: No abstract text available
Text: 298D, 298W www.vishay.com Vishay Sprague Solid Tantalum Chip Capacitors 298D MICROTAN , 298W Extended Range MICROTAN®, Leadframeless Molded FEATURES • Small sizes include 0603 and 0402 footprint • Lead Pb -free L-shaped face-down terminations • 8 mm tape and reel packaging available per
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EIA-481
125electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
298W
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5362b
Abstract: TS81102G0 TS81102G0FS TSEV81102G0FS TSEV81102G0TPZR3 TSEV83102G0BGL TSEV83102G0BXX TSEV8388BGL FR4 dielectric constant 4.6 FR4 epoxy dielectric constant 4.4
Text: TSEV81102G0FS Evaluation Board . User Guide Table of Contents Section 1 Introduction . 1-1
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TSEV81102G0FS
5362B
TS81102G0
TS81102G0FS
TSEV81102G0TPZR3
TSEV83102G0BGL
TSEV83102G0BXX
TSEV8388BGL
FR4 dielectric constant 4.6
FR4 epoxy dielectric constant 4.4
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FR4 epoxy dielectric constant 4.4
Abstract: e/AT-33225-BLK
Text: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency
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AT-33225
OT-223
AT-33225
AT-3322
5965-5910E
44475A4
FR4 epoxy dielectric constant 4.4
e/AT-33225-BLK
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CBC 184 transistor
Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,
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AT-31625
OT-223
AT-31625
CBC 184 transistor
TRANSISTOR cBC 449
t1c8
BF 145 transistor
448 2222A
CBC 184 c transistor
AT-31625-TR1
transistor 2222a
96t1
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliMPACKARD 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBmP011t@ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,
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AT-33225
dBmP011t@
OT-223
AT-33225
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AT-33225
Abstract: AT-33225-TR1 transistor 2222a MSOP-3
Text: 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ.
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AT-33225
OT-223
AT-33225
AT-33225-TR1
transistor 2222a
MSOP-3
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CBC 184 transistor
Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,
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AT-31625
OT-223
AT-31625
5965-5911E
CBC 184 transistor
CBC 184 c transistor
transistor 2222a data sheet
AT-31625-BLK
AT-31625-TR1
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2222A
Abstract: AT-33225 AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR
Text: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ.
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AT-33225
OT-223
AT-33225
5965-5910E
2222A
AT-33225-BLK
AT-33225-TR1
IC pt 2399 CIRCUIT DIAGRAM
t1c8
3316 TRANSISTOR
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b12c3
Abstract: C22A AT84AS008 AT84AS008CGL AT84CS001 MC100EL16 RO4003 BDC 47 transistor D9B diode AT84XAS
Text: 10-bit 2.2 Gsps ADC Evaluation Board - AT84AS008-EB . User Guide Table of Contents Section 1 Overview . 1-1
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10-bit
AT84AS008-EB
AT84AS008-EB
5409B
b12c3
C22A
AT84AS008
AT84AS008CGL
AT84CS001
MC100EL16
RO4003
BDC 47 transistor
D9B diode
AT84XAS
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digital multimeter avr
Abstract: AT84AS001 AT84AS001CTPY 9BP8 AT84AS001-eb Lorch AT84AS001VTPY FR4 4.9 dielectric constant FR4 epoxy dielectric constant 4.2 Atmega128 hardware guide adc
Text: AT84AS001-EB Evaluation Board . User Guide Table of Contents Section 1 Introduction . 1-1
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AT84AS001-EB
AT84AS0001
5467B
digital multimeter avr
AT84AS001
AT84AS001CTPY
9BP8
Lorch
AT84AS001VTPY
FR4 4.9 dielectric constant
FR4 epoxy dielectric constant 4.2
Atmega128 hardware guide adc
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FR4 dielectric constant 4.6
Abstract: C5 MARKING TRANSISTOR SiGe POWER TRANSISTOR THN6701B R6701 transistor 1608 L28 marking
Text: Preliminary Specification THN6701B NPN SiGe RF POWER TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High power gain 7.0 3.5 □ Features MAG = 15 dB @ VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm 3W @ VCE = 6 V, ICQ = 50 mA, f = 465 MHz
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THN6701B
OT223
FR4 dielectric constant 4.6
C5 MARKING TRANSISTOR
SiGe POWER TRANSISTOR
THN6701B
R6701
transistor 1608
L28 marking
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