2SB1116AL
Abstract: 2SB1116 2SB1116A 2sb1116-al 2SB1116G
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A NPN SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A Lead-free: 2SB1116/AL Halogen-free: 2SB1116/AG ORDERING INFORMATION Ordering Number Normal Lead Free Halogen Free
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2SB1116/A
2SD1616/A
2SB1116/AL
2SB1116/AG
2SB1116-x-T92-B
2SB1116L-x-T92-B
2SB1116G-x-T92-B
2SB1116-x-T92-K
2SB1116L-x-T92-K
2SB1116G-x-T92-K
2SB1116AL
2SB1116
2SB1116A
2sb1116-al
2SB1116G
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AYW marking code IC
Abstract: 1N916 PZT3904T1G 1AM 6
Text: PZT3904T1G General Purpose Transistor NPN Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage
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PZT3904T1G
PZT3904T1/D
AYW marking code IC
1N916
PZT3904T1G
1AM 6
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Untitled
Abstract: No abstract text available
Text: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300
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BF721T1G
BF721T1/D
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AYW marking code IC
Abstract: BF721T1G 306 marking code transistor
Text: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300
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BF721T1G
BF721T1/D
AYW marking code IC
BF721T1G
306 marking code transistor
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PDF
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AYW marking code IC
Abstract: Transistor BFR 38 BF720T1G BF720T3G
Text: BF720T1G, BF720T3G NPN Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 300 Vdc Collector - Base Voltage VCBO
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BF720T1G,
BF720T3G
BF720T1/D
AYW marking code IC
Transistor BFR 38
BF720T1G
BF720T3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G CWT1G LBC848AWT1G,BWT1G CWT1G ORDERING INFORMATION Pb– Free Device
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LBC846AWT1G
LBC847AWT1G
LBC848AWT1G
SC-70
3000/Tape
LBC846AWT3G
10000/Tape
BC846
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PDF
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Untitled
Abstract: No abstract text available
Text: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO -350
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BSP16T1G
BSP16T1/D
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PDF
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brd8011
Abstract: BSP16T1G
Text: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO
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BSP16T1G
BSP16T1/D
brd8011
BSP16T1G
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PDF
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Transistor BFR
Abstract: PZTA96ST1G
Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 450 Vdc
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PZTA96ST1G
OT-223
O-261)
PZTA96ST1/D
Transistor BFR
PZTA96ST1G
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PDF
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ic marking k52
Abstract: k535 LBC847CWT
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1 ORDERING INFORMATION Pb– Free Device Package
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LBC846AWT1
LBC847AWT1
LBC848AWT1
LBC846AWT1G
OT-323
3000/Tape
LBC847AWT1G
LBC848AWT1G
ic marking k52
k535
LBC847CWT
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MMBTA06WT1G
Abstract: MARKING code GM SOT 323
Text: MMBTA06WT1G Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model - 4 kV ESD Rating: Machine Model - 400 V http://onsemi.com Features COLLECTOR 3 • These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant
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MMBTA06WT1G
MMBTA06WT1/D
MMBTA06WT1G
MARKING code GM SOT 323
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT4403WT1G Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR
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MMBT4403WT1G
MMBT4403WT1/D
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1 ORDERING INFORMATION Pb– Free Device Package
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LBC846AWT1
LBC847AWT1
LBC848AWT1
LBC846AWT1G
OT-23
3000/Tape
LBC847AWT1G
LBC848AWT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)
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LBC807-16WT1G
OT-323
3000/Tape
LBC807-25WT1G
LBC807-40WT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR
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MMBT4401WT1G
MMBT4401WT1/D
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PDF
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MMBT4401LT1
Abstract: MMBT4401WT1 MMBT4401WT1G
Text: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR
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MMBT4401WT1G
MMBT4401WT1/D
MMBT4401LT1
MMBT4401WT1
MMBT4401WT1G
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PDF
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MMBT4403WT1G
Abstract: MMBT4403LT1
Text: MMBT4403WT1G Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR
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MMBT4403WT1G
MMBT4403WT1/D
MMBT4403WT1G
MMBT4403LT1
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PDF
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MMBTA56WT1G
Abstract: No abstract text available
Text: MMBTA56WT1G Driver Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 ESD Rating: Human Body Model - 4 kV http://onsemi.com Machine Model - 400 V These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1
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MMBTA56WT1G
MMBTA56WT1/D
MMBTA56WT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ 31 H SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 31 H
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IEC61249-2-21
PG-TO-220-3
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buz31h
Abstract: IEC61249-2-21 PG-TO-220-3 PG-TO220-3 BUZ 31 H
Text: BUZ 31 H SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 31 H
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IEC61249-2-21
PG-TO-220-3
buz31h
IEC61249-2-21
PG-TO-220-3
PG-TO220-3
BUZ 31 H
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ 31 H3046 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 31 H3046
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H3046
IEC61249-2-21
PG-TO-262-3
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ 31 H SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 31 200 V
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IEC61249-2-21
PG-TO-220-3
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MMBT3906G-AE3-R
Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G
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MMBT3906
350mW
MMBT3904
MMBT3906L
MMBT3906G
MMBT3906-AE3-R
MMBT3906L-AE3-R
MMBT3906G-AE3-R
MMBT3906-AL3-R
MMBT3906L-AL3-R
MMBT3906G-AE3-R
VCE30V
MMBT3904
MMBT3906
MMBT3906G
MMBT3906L
marking 2A
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PDF
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2SC2235
Abstract: transistor 2sC2235 2sc223 2SC2235L 2SA965 UTC 2SC2235L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * Complimentary to UTC 2SA965 Lead-free: 2SC2235L Halogen-free: 2SC2235G ORDERING INFORMATION Ordering Number
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2SC2235
2SA965
2SC2235L
2SC2235G
2SC2235-x-T9N-B
2SC2235L-x-T9N-B
2SC2235G-x-T9N-B
2SC2235-x-T9N-K
2SC2235L-x-T9N-K
2SC2235G-x-T9N-K
2SC2235
transistor 2sC2235
2sc223
2SC2235L
2SA965
UTC 2SC2235L
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