MMBFJ310LT1G
Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Text: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage
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Original
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MMBFJ309LT1G,
MMBFJ310LT1G
OT-23
O-236)
MMBFJ309LT1/D
MMBFJ310LT1G
MMBFJ310LT1
MMBFJ309LT1G
ON SEMICONDUCTOR MMBFJ309LT1G
MMBFJ309
MMBFJ309LT1
MMBFJ310
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PDF
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MMBFU310LT1G
Abstract: MMBFU310
Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage
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Original
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MMBFU310LT1G
OT-23
O-236AB)
MMBFU310LT1/D
MMBFU310LT1G
MMBFU310
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PDF
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m6c marking code
Abstract: MMBFU310LT1G M6C sot-23
Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage
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Original
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MMBFU310LT1G
OT-23
O-236AB)
MMBFU310LT1/D
m6c marking code
MMBFU310LT1G
M6C sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage
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Original
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MMBFU310LT1G
236AB)
MMBFU310LT1/D
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PDF
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P35 marking code transistor
Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
Text: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)
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Original
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DPLS350Y
-100mA
AEC-Q101
J-STD-020
MILSTD-202,
DPLS350Y-13
DS31149
P35 marking code transistor
4600 8 pin ic
Marking P35 sot89
marking p35
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PDF
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SS8550W
Abstract: Y2 TRANSISTOR transistor Y2 transistor marking y2 sot-323 transistor marking code 15 marking Y2 transistor
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550W Pb z Collector Current. IC= 1.5A） z Complementary To SS8550W. z Collector Dissipation: PC=0.2W (TC=25°C Lead-free APPLICATIONS z High Collector Current.
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Original
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SS8550W
SS8550W.
OT-323
BL/SSSTF062
SS8550W
Y2 TRANSISTOR
transistor Y2
transistor marking y2
sot-323 transistor marking code 15
marking Y2 transistor
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PDF
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ss8550
Abstract: 2SS8550 ss8550 sot-23 SS8550 sot-23 Y2 SS8550 transistor sot23 transistor marking y2 ss8550 Y2 TRANSISTOR Y2 SOT23-3 transistor SS8550 MARKING 01
Text: SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES Power dissipation 1 Base PCM : 0.3 W Collector Current ICM : - 1.5 A Collector-base voltage
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Original
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SS8550
OT-23
-80mA
-100mA
-800mA
-50mA,
30MHz
01-June-2005
ss8550
2SS8550
ss8550 sot-23
SS8550 sot-23 Y2
SS8550 transistor
sot23 transistor marking y2
ss8550 Y2 TRANSISTOR
Y2 SOT23-3
transistor SS8550
MARKING 01
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: BC847CDLP BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
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Original
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
DS30817
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PDF
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SS8550 sot-23 Y2
Abstract: ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: PC=0.3W (TC=25°C Lead-free APPLICATIONS z High Collector Current. SOT-23
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Original
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SS8550
SS8550.
OT-23
BL/SSSTC087
SS8550 sot-23 Y2
ss8550 sot-23
sot23 transistor marking y2
SS8550
transistor SS8550
ss8550 TRANSISTOR
ss8550 Y2 TRANSISTOR
ss8550 TRANSISTOR equivalent
transistor marking y2
Y2 SOT23
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PDF
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sot23 transistor marking y2
Abstract: Y2 sot23 y2 sot-23 s9016 transistor S9016 sot23 y2 s9016 transistor datasheet MARKING Y2 sot-23 MARKING 16 transistor sot23 transistor marking y2
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current. IC= 25mA） z Power dissipation.(PC=200mW S9016 Pb Lead-free APPLICATIONS z AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION
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Original
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S9016
200mW)
OT-23
BL/SSSTC127
sot23 transistor marking y2
Y2 sot23
y2 sot-23
s9016 transistor
S9016
sot23 y2
s9016 transistor datasheet
MARKING Y2 sot-23
MARKING 16 transistor sot23
transistor marking y2
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PDF
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DFN1310H4-6
Abstract: No abstract text available
Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package
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Original
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
DS30817
621-BC847CDLP-7
BC847CDLP-7
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PDF
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BC847CDLP-7
Abstract: DFN1310H4-6 BC847CDLP
Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package
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Original
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
0015g
DS30817
BC847CDLP-7
DFN1310H4-6
BC847CDLP
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847CDLP N EW PRODU CT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package
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Original
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
0015g
DS30817
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PDF
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Untitled
Abstract: No abstract text available
Text: 2DA1213O/Y PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant Note 1
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Original
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2DA1213O/Y
OT89-3L
J-STD-020
MIL-STD-202,
DS31306
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PDF
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13003D
Abstract: No abstract text available
Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode
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Original
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DXT13003DG
OT223
J-STD-020
MIL-STD-202,
DS37262
13003D
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PDF
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DCX69
Abstract: No abstract text available
Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Note 1
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Original
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DCX69/-16/-25
AEC-Q101
J-STD-020
MIL-STD-202,
DS31264
DCX69
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1
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Original
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ZXTP4003G
OT223
-100V
-150mA,
AEC-Q101
J-STD-020
DS35459
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PDF
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ZXTP
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1
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Original
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ZXTP4003G
OT223
-100V
-150mA,
AEC-Q101
J-STD-020
OT223
ZXTP4003GTA
ZXTP
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PDF
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Untitled
Abstract: No abstract text available
Text: 2DD2678 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
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Original
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2DD2678
OT89-3L
J-STD-020D
MIL-STD-202,
DS31637
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PDF
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Untitled
Abstract: No abstract text available
Text: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
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Original
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DPLS350E
OT-223
J-STD-020D
MIL-STD-202,
DS31230
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PDF
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Untitled
Abstract: No abstract text available
Text: DPLS4140E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
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Original
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DPLS4140E
OT-223
J-STD-020D
MIL-STD-202,
DS31279
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PDF
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Untitled
Abstract: No abstract text available
Text: DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 160V IC = 600mA High Collector Current Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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Original
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DXT5551
600mA
DXT5401
AEC-Q101
J-STD-020
MIL-STD-202,
DS31225
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN10150DZ 150V NPN LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead Free, RoHS Compliant (Note 1)
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Original
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ZXTN10150DZ
150mA,
AEC-Q101
OT-89
J-STD-020
DS35096
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PDF
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Untitled
Abstract: No abstract text available
Text: SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead Pb -Free 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A 0.2 W . PCM Power Dissipation (Tamb=25°C)
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Original
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SS8550W
OT-323
SC-70)
-80mA
-50mA
30MHz
SS8550W
10-Jun-2011
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PDF
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