Untitled
Abstract: No abstract text available
Text: 2SC3738 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m
|
Original
|
2SC3738
Freq10MÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N415A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.
|
Original
|
2N415A
Freq10MÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3979 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900â V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m
|
Original
|
2SC3979
Freq10MÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N415 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.
|
Original
|
2N415
Freq10MÃ
|
PDF
|