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Text: 2SC1567 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.330
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2SC1567
Freq120MÃ
StyleTO-126
Code3-140
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Text: 2SA706-2 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.9 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA706-2
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Text: IDC3299 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240
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IDC3299
Freq120M
StyleTO-220var
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Text: RCA1A01 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.200
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RCA1A01
Freq120M
StyleTO-39
Code3-12
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Abstract: No abstract text available
Text: 2SC3694 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.400
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2SC3694
Freq120M
StyleSOT-186
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Abstract: No abstract text available
Text: ZTX951 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)4 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)4 @I(B) (A) (Test Condition)400m
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ZTX951
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Text: GES3417 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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GES3417
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Abstract: No abstract text available
Text: 2N2460 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)50m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)275þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)10m
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2N2460
Freq120M
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Text: 2SC3267GR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0
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2SC3267GR
Freq120M
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Text: 2SC3939Q Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3939Q
Freq120MÃ
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Text: 2N2799 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)100þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2N2799
Freq120M
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Text: 2SD1153 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.4.0k
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2SD1153
Freq120M
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Text: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA1150Y
Freq120M
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Text: 2PB1219AR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)300m
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2PB1219AR
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Text: 2SC1298 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.
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2SC1298
Freq120M
Code4-29
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Untitled
Abstract: No abstract text available
Text: RCA1A17 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.200
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RCA1A17
Freq120M
StyleTO-39
Code3-12
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Untitled
Abstract: No abstract text available
Text: HEPS3049 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.110Â
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HEPS3049
Freq120M
StyleTO-202
Code4-27
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Abstract: No abstract text available
Text: 2SA1769 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)700m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)250m
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2SA1769
Freq120MÃ
req120MÃ
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Abstract: No abstract text available
Text: MM2896HX Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)150m
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MM2896HX
Freq120M
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Text: TMPT1653N2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)130 V(BR)CBO (V)150 I(C) Max. (A)10m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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TMPT1653N2
Freq120M
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Text: MM2896HXV Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)150m
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MM2896HXV
Freq120M
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Abstract: No abstract text available
Text: TED1802K Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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TED1802K
Freq120M
req120M
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Untitled
Abstract: No abstract text available
Text: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA1150O
Freq120M
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Abstract: No abstract text available
Text: 2N2464 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)275þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)10m
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2N2464
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